Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Progress and future prospects of negative capacitance electronics: A materials perspective

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

On the negative capacitance in ferroelectric heterostructures

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Harnessing ferroelectric domains for negative capacitance

Ferroelectric Negative Capacitance Field Effect Transistor

Spatially resolved steady-state negative capacitance

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Beyond Moore's law – A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics

Negative Capacitance beyond Ferroelectric Switches

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Observation of negative capacitance in antiferroelectric PbZrO3 Films

Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

HfO<sub>2</sub>-based Ferroelectric Devices for Low Power Applications

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Revisiting the theory of ferroelectric negative capacitance

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

HfO<inf>2</inf>-based Ferroelectric Devices for Low Power Applications

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films