Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Revisiting the theory of ferroelectric negative capacitance

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

On the negative capacitance in ferroelectric heterostructures

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Negative Capacitance beyond Ferroelectric Switches

Why Do Ferroelectrics Exhibit Negative Capacitance?

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Dynamics of Negative Capacitance Induced by Ferroelectric Switching in Ferroelectric-Resistor Circuit

Duality of Switching Mechanisms and Transient Negative Capacitance in Improper Ferroelectrics

A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

Spatially resolved steady-state negative capacitance

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Progress and future prospects of negative capacitance electronics: A materials perspective

Dual mechanisms for transient capacitance anomaly in improper ferroelectrics

Systematic Interpretation of Time Effect on Negative Capacitance of Ferroelectrics Based on Electrostatics and Charge Dynamics

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

First Observation of Negative Capacitance in Molecular Ferroelectric Thin Films

Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor

Harnessing ferroelectric domains for negative capacitance

Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor