Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Systematic Interpretation of Time Effect on Negative Capacitance of Ferroelectrics Based on Electrostatics and Charge Dynamics

Dynamics of Negative Capacitance Induced by Ferroelectric Switching in Ferroelectric-Resistor Circuit

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Investigation of Negative Capacitance Effect from Domain Switching Dynamics

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

Physical Origin of Transient Negative Capacitance in a Ferroelectric Capacitor

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

On the negative capacitance in ferroelectric heterostructures

Duality of Switching Mechanisms and Transient Negative Capacitance in Improper Ferroelectrics

Design Space for Stabilized Negative Capacitance in HfO 2 Ferroelectric-Dielectric Stacks Based on Phase Field Simulation

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

Modeling Transient Negative Capacitance in Steep-Slope FeFETs

Multiple factors of regulation for transient negative capacitance in PbZr(1-x)Ti(x)O3 ferroelectric thin films

Direct Measurement of Negative Capacitance in Ferroelectric/Semiconductor Heterostructures

Strain Tuning on Van Der Waals Negative Capacitance Transistors