Abstract:Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices. As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally probe the same length and time scales. This allows realtime feedback between theory and experiment, with new discoveries now routinely made both in the laboratory and on the computer. Throughout this chapter, we will highlight the recent advances in density functional theory based modeling and the role it played in our understanding of ultrathin ferroelectrics. We will begin with a brief introduction to ferroelectricity and ferroelectric oxides, followed by an overview of the major theoretical developments. We will then discuss some of the subtleties of ferroelectricity in perovskite oxides, before turning our attention to the main subject of the chapter -- ferroelectricity in ultrathin films. We will discuss in detail the influence of the mechanical, electrical and chemical boundary conditions on the stability of the polar state in a parallel plate capacitor geometry, introducing the notion of depolarization fields that tend to destabilize ferroelectricity. We will look at other ways in which a thin ferroelectric can preserve its polar state, focusing on ferroelectric domains and domain walls. Finally, we will briefly discuss artificially layered ferroelectrics and the potential they hold as tailor-made materials for electronic applications.

Electrodynamics of ferroelectric films with negative capacitance

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

On the negative capacitance in ferroelectric heterostructures

Observation of negative capacitance in antiferroelectric PbZrO3 Films

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Giant Negative Electrocaloric Effect Induced by Domain Transition in the Strained Ferroelectric Thin Film

Dielectric behavior and negative capacitance in multidomain ferroelectric/dielectric superlattices

Duality of Switching Mechanisms and Transient Negative Capacitance in Improper Ferroelectrics

Why Do Ferroelectrics Exhibit Negative Capacitance?

Spatially resolved steady-state negative capacitance

Dual mechanisms for transient capacitance anomaly in improper ferroelectrics

Harnessing ferroelectric domains for negative capacitance

Revisiting the theory of ferroelectric negative capacitance

Systematic Interpretation of Time Effect on Negative Capacitance of Ferroelectrics Based on Electrostatics and Charge Dynamics

Ferroelectricity in ultrathin film capacitors

Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect

Revealing Fast Negative Capacitance in PbZr 0.2 Ti 0.8 O 3 Thin Film with Acicular Ferroelastic Domains

Terahertz Electrodynamics of $180^\circ$ Domain Walls in Thin Ferroelectric Films

Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Dynamics of Negative Capacitance Induced by Ferroelectric Switching in Ferroelectric-Resistor Circuit