Characterization of passive CMOS sensors with RD53A pixel modules
Franz Glessgen,Malte Backhaus,Florencia Canelli,Yannick Manuel Dieter,Jochen Christian Dingfelder,Tomasz Hemperek,Fabian Huegging,Arash Jofrehei,Weijie Jin,Ben Kilminster,Anna Macchiolo,Daniel Muenstermann,David-Leon Pohl,Branislav Ristic,Rainer Wallny,Tianyang Wang,Norbert Wermes,Pascal Wolf
DOI: https://doi.org/10.1088/1742-6596/2374/1/012174
2022-11-01
Journal of Physics: Conference Series
Abstract:Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to optimize the sensor geometry and the performance, with biasing structures implemented in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150nm CMOS process. This presentation will focus on the characterization of pixel modules, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests. We will report on the investigation of RD53A modules with 25x100 μm 2 cell geometry.