Study of Two-Dimensional Position Sensitive Silicon Detector

Zhi Li

2003-01-01

Abstract:The two-dimensional position sensitive silicon detector has been tested using Tu a source and ion beams provided by HIRFL + RIBLL. The operation conditions have been studied carefully for best energy resolution, position resolution and position linearity. Various problems are discussed according to some qualitative analysis.

What problem does this paper attempt to address?

The Current-position Characteristics of Two Dimensional Positio n Sensitive Detectors with Different Anode Structure

黄梅珍,林斌,唐九耀,施隆照,陈钰清

DOI: https://doi.org/10.3321/j.issn:1005-0086.2001.08.008

2001-01-01

Abstract:Several structure types of two dimensional position sensitive detectors have been developed, and three types of them are concerned in this paper. They are the tetra-lateral PSD, the modified tetra-lateral PSD and the resistance bordered PSD. The structure characteristic and operation principle of these three PSD are described, and their current output formula are derived theoretically. The linearity position grid maps based on the current and the position formula are obtained and compared. The maximum position error in the 60% sensitive area of tetra-lateral PSD and modified tetra-lateral PSD are 10.0% and 5.0%, respectively. The current-position characteristic of the bordered PSD is linear. These theoretical results are agreed with the experimental results.
The Linearity Analysis of Different Two Dimensional Position Sensitive Detectors with Different Structure by Using Multisim

Xunjun Qi,Kan Li,Bin Lin,Xiangqun Cao,Yuqing Chen

2006-01-01

Abstract:Four structure types of two dimensional position sensitive detectors have been studied. There are the tetra-lateral PSD, the modified tetra-lateral PSD, the duo-lateral PSD and the resistance bordered PSD. The RC models of these four structure type PSDs have been developed and the linearity of them are emulated by the soft of the Multisim. The linearity position grid and the errors graphics show that the average error in the 40% centric sensitive area of the tetra-lateral PSD, the modified tetra-lateral PSD, the duo-lateral PSD and the resistance bordered are 10. 05%, 3. 70%, 0. 29% and 0. 12% respectively. The result shows that the models can give a more exact analysis on different structure types of two dimensional position sensitive detectors than the analytic and numerical methods.
Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

XJ Qi,B Lin,DY Chen,XQ Cao,YP Chen

DOI: https://doi.org/10.1117/1.2151807

IF: 1.3

2006-01-01

Optical Engineering

Abstract:The fabrication and testing results of a 65-pin ceramic packaged 4 x 4 arrayed position sensitive detector are presented. The detector, consisting of 16 tetra-lateral sensitive areas, is a p-n-n+ configuration made on 3-in. < 111 > n-type high resistance crystal silicon substrates. A 100-nm antireflection SiO2 thin film is formed on the surface, along with a multilayer cover glass with transmissivity > 98% from 400 to 950 nm. Primary tests of the device show that it has a low dark current, high spectral sensitivity, very fast response speed, and very good linearity. The dark current of an element unit is less than 20 nA, which is the allowable maximum dark current. The peak spectral sensitivity of the sensor is over 505 mA/W at 800-nm wavelength. Its response time is 8 ns at 45-V reverse bias and the nonlinearity of the total sensitive area is less than 1%. (c) 2006 Society of Photo-Optical Instrumentation Engineers.
Analysis and Fabrication of A New Two Dimensional Near Infrared Pincushion Silicon Based Psd

XJ Qi,B Lin,L Lu,W Jin,XQ Cao

DOI: https://doi.org/10.1117/12.674205

2006-01-01

Abstract:A new photoelectric model of silicon based position sensitive detector (PSD) is built and the formulas of the photocurrent and spectral response are got with it. The effect of every layer thickness and SiO2 thickness to the spectral response is analysis and calculation. The spectral response of PSD is affected by the thickness of p layer mainly at short wavelength and by the thickness of the depletion layer mainly at long wavelength. With the results, a new silicon based near infrared two dimensional pincushion PSD is designed and fabricated. Some necessary tests show that the peak spectral sensitivity of our device is 0.626A/W at 920nm wavelength.
Fabrication and Characterization of Two-Dimensional Pin-Cushion Position Sensitive Detectors

陈冬严,林斌,陈钰清

IF: 2.56

2004-01-01

Chinese Optics Letters

Abstract:In this paper, the fabrication and testing results of a two-dimensional pin-cushion position sensitive detector (PSD) are presented. The obtained pin-cushion PSD with an 8 × 8 mm2 effective area presents a maximum spectral response of 0.5 mA/mW at 850-nm wavelength, a 12-nA dark current at 5-V reverse voltage, a reverse breakdown voltage of 50 V, a nonlinearity of 2.175%, and a spatial resolution of 10 μm. The spatial resolution is relatively low and the slight pin-cushion concave distortion is generated due to the incompletely satisfied relationship between sheet resistivity of the anode and the resistance per unit length.
The Timing Performance of A Two-Dimensional Position-Sensitive Silicon Detector

CE Wu,YL Ye,D Jiang,T Zheng,H Hua,ZH Li,XQ Li,YC Ge,GL Zhang,DY Pang,J Wang,JL Lou

DOI: https://doi.org/10.1016/j.nima.2005.09.026

2005-01-01

Abstract:The timing performance of a two-dimensional position-sensitive silicon detector (PSD) was tested using 6He beam. An approximately linear relationship between the position of incident particles and the timing output of the detector is found. A qualitative explanation is given to why a relatively long charge collection time on the resistive anode leads to the large time diffusion of the timing output. It is estimated that the maximum timing shift between the edge area and the central area may attain an order of ∼1μs.
Research on the performance parameter of 2D position sensitive detector

Bin Lin,Meizhen Huang,Xiaobin Shun,Xiangqun Cao

DOI: https://doi.org/10.1117/12.471903

2002-01-01

Abstract:The performance parameter of 2D Position Sensitive Detector (PSD) are analyzed and calculated theoretically. The non-linearity and distortion grid map of the theoretical calculation using this structure position formula are in good agreement with the experimental result. The experimental results show that with the signal processor, the position non-linearity(rms) is less than 0.15% in the 60% rang of a 13mm x 13mm active area, the position error is <+/-20mum. It has demonstrated that 2D PSD was obtained the best position non-linearity results of 13mm X 13mm.
Fabrication and Characterization of a New Type 4×4 Arrayed Position-Sensitive Detector

Xunjun Qi,Bin Lin,Dongyan Chen,Yuqing Chen

DOI: https://doi.org/10.1117/12.568243

2005-01-01

Abstract:Position sensitive detectors (PSD) use the lateral photo effect to determine the centroid position of an incident light spot focused on it. A 65-pin ceramic packaged 4×4 arrayed position sensitive detector was fabricated first time as a new prototype of Hartmann-Shack wavefront sensor. The detector, consisting of 16 tetra-lateral sensitive areas, is a p-n-n+ configuration made on 3-inch <111> n-type high resistance crystal silicon substrate. A 100nm antireflection SiO2 thin film was formed on the surface and a multi-layer cover glass with transmissivity > 98% from 400nm to 950nm. The main parameters of the arrayed as wavefront detector, such as reverse voltage, dark current photosensitivity, response time were reported in the paper.
Fabrication and characterization of a new type 4 × 4 arrayed position sensitive detector

Qi I. Xunjun,Bin Lin,Dongyan Chen,Yuqing Chen

DOI: https://doi.org/10.1117/12.568243

2005-01-01

Abstract:Position sensitive detectors (PSD) use the lateral photo effect to determine the centroid position of an incident light spot focused on it. A 65-pin ceramic packaged 4x4 arrayed position sensitive detector was fabricated first time as a new prototype of Hartmann-Shack wavefront sensor. The detector, consisting of 16 tetra-lateral sensitive areas, is a p-n-n+ configuration made on 3-inch < 111 > n-type high resistance crystal silicon substrate. A 100nm antireflection SiO2 thin film was formed on the surface and a multi-layer cover glass with transmissivity > 98% from 400nm to 950nm. The main parameters of the arrayed as wavefront detector, such as reverse voltage, dark current photosensitivity, response time were reported in the paper.
Research on the 1D PSD

Xiangqun Cao,Bin Lin,Meizhen Huang,XuMing Wu,Yuqing Chen

DOI: https://doi.org/10.1117/12.471904

2002-01-01

Abstract:Position Sensitive Detector (PSD) is a device utilizing the lateral photoelectric that produced by the non-uniform illumination of a rectifying semiconductor junction. The linear requirement, spectral responds, position detection error of ID PSD were presented in this paper. All these studied works are the theoretical basis for designing and fabrication PSD with excellent performance. The experimental results show that the rms non-linearity and the typical position error are 0.1% of full length (8mm) and +/-5mum.
New Test and Analysis of Position-Sensitive-Silicon-Detector

Lang Feng,Yu-Cheng Ge,He Wang,Feng-Ying Fan,Rui Qiao,Fei Lu,Yu-Shou Song,Tao Zheng,Yan-Lin Ye

DOI: https://doi.org/10.1088/1674-1137/33/1/011

IF: 2.944

2009-01-01

Chinese Physics C

Abstract:We have tested and analyzed the properties of two-dimensional Position-Sensitive-silicon-Detector （PSD） with new integrated preamplifiers. The test demonstrates that the best position resolution for 5.5 MeV α particles is 1.7 mm （FWHM）, and the best energy resolution is 2.1%, which are notably better than the previously reported results. A scaling formula is introduced to make the absolute position calibration.
Csi(Ti) Detector with Position-Sensitive Photomultiplier Readout

LJ Qin,WL Zhan,ZY Guo,GQ Xiao,ZY Sun,JX Li,XW Meng,SH Jiang,JC Wang,QJ Wang

1999-01-01

Abstract:A CsI(Tl) detector with a two-dimension positional sensitive photomultiplier readout at Radioactive Ion Beam Line in Lanzhou (RIBLL) is reported, The Cs(Tl) scitillator is 10 mm in thickness and 60mm x 60mm in active area. Its spatial resolution of 0.81mm (FWHM) is achieved. Finally the Monte-Carlo method is employed to simulate its spatial resolution whose result is in good agreement with the tested.
First investigation of a novel 2D position-sensitive semiconductor detector concept

D.Bassignana,M.Fernandez,R.Jaramillo,M.Lozano,F.J.Munoz,G.Pellegrini,D.Quirion,I.Vila

DOI: https://doi.org/10.1088/1748-0221/7/02/P02005

2012-02-04

Abstract:This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.

Instrumentation and Detectors
Development of Si Multi-Strip Bi-Dimension Position Sensitive Detectors

TAN Ji-lian,JIN Gen-ming,DUAN Li-min,LU Zi-wei,YUAN Xiao-hua,ZHANG Ling,XIAO Guo-qing,XU Hu-shan,TIAN Da-yu,NING Bao-jun,WANG Wei,ZHANG Lu

DOI: https://doi.org/10.3969/j.issn.0258-0934.2006.06.001

2006-01-01

Abstract:The technology and preliminary test results of Si bi-dimension position sensitive detector based on multi-strip structure fabricated by using planar technology were described in this paper.The sensitive area of this kind of detector is 50×50 mm~(2).The P side surface was divided into equal 16 strips with 100μm space between neighbouring two strips,each strip having length of 50 mm and width of 3 mm.The strips doped on P surface are resistive P junction layer featuring high uniformity,The incident positions of particles can be determined by using charge-division method.When the detector was biased with full deplation voltage,the reverse leakagecurrents of most of strips were ess than 30 nA,and an energy resolution of 2.5% and a position resolution of 0.5 mm were obtained for ~(239) Pu α particles.
A multi-electrode two-dimensional position sensitive diamond detector

S. Ditalia Tchernij,D. Siciliano,G. Provatas,J. Forneris,F. Picollo,M. Campostrini,V. Rigato,Z. Siketic,M. Jaksic,E. Vittone

DOI: https://doi.org/10.1063/5.0205621

IF: 4

2024-05-27

Applied Physics Letters

Abstract:In multi-electrode devices, charge pulses at all the electrodes are induced concurrently by the motion of the excess charge carriers generated by a single ion. This charge-sharing effect is such that the pulse amplitude at each sensitive electrode depends on the device geometry, its overall electrostatic configuration, and the charge transport properties of the detecting material. Therefore, the cross-analysis of the charge pulses induced at each electrode offers implicit information on the position of the ion impact. In this work, we investigate the two-dimensional position sensitivity of a diamond detector fabricated by deep ion beam lithography. By exploiting the ion beam induced charge technique, the device was exposed to a 2 MeV Li+ ion micro-beam to map the spatial dependence of the charge collection efficiency (CCE) on the nominal micro-beam scanning position. The combination of the CCE maps revealed a two-dimensional position sensitivity of the device with micrometric resolution at the center of the active region.

physics, applied
Over 98% Linearity 4H-Sic Ultraviolet Position Sensitive Detector

Yifu Wang,Haoyu Du,Peichen Yang,Weizong Xu,Dong Zhou,Feng Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu

DOI: https://doi.org/10.1109/led.2024.3471660

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:In this work, a 6.5 mm × 6.5 mm large-area pin-cushion 4H-SiC UV position-sensitive detector (PSD) has been designed and fabricated. The device exhibits a low dark current of 6 pA, a high responsivity of 0.115 A/W and a good linear response at 275 nm. By carefully optimizing ion implantation parameters both in the photosensitive area and the border resistor area, the interference of the device’s surface electrodes has been largely alleviated, thereby achieving a low position error of less than 59 μm and a superior linearity over 98%. The resulting PSD exhibits obvious independence of light spot size and light power during the position measurement. The dependence of the detector’s resolution and response speed on position is also preliminarily investigated.
Design and Experimental Study of a Two-Dimensional Position Sensitive X-ray Detector

Wang Xiao-Hu,Zhu Qi-Ming,Chen Yuan-Bo,Chen Chang,Liu Rong-Guang,Wang Lan,Jin Yan,Ma Xiao-Yan,Jiang Shan

DOI: https://doi.org/10.1088/1674-1137/32/11/011

2008-01-01

Abstract:A prototype of a two-dimensional position sensitive X-ray detector was designed and constructed for small angle X-ray scattering experiments at BSFR（Beijing Synchrotron Radiation Facility）.The detector is based on MWPC with cathode strip readout,and has a sensitive area of 200 mm×200 mm.The spatial resolution（FWHM） of about 210 μm along the anode wire direction was obtained from the 55Fe X-ray test of the detector.
Studies of 100 um-thick silicon strip detector with analog VLSI readout

T. Hotta,M. Fujiwara,T. Kinashi,Y. Kuno,M. Kuss,T. Matsumura,T. Nakano,S. Sekikawa,H. Tajima

DOI: https://doi.org/10.48550/arXiv.physics/9812034

1998-12-18

Abstract:We evaluate the performances of a 100 um-thick silicon strip detector (SSD) with a 300 MeV proton beam and a 90Sr beta-ray source. Signals from the SSD have been read out using a VLSI chip. Common-mode noise, signal separation efficiency and energy resolution are compared with those for the SSD's with a thickness of 300 um and 500 um. Energy resolution for minimum ionizing particles (MIP's) is improved by fitting the non-constant component in a common-mode noise with a linear function.

Instrumentation and Detectors,High Energy Physics - Experiment
Investigation of the Thickness Non-Uniformity of the Very Thin Silicon-Strip Detectors

Qiang Liu,Yanlin Ye,Zhihuan Li,Chengjian Lin,Huiming Jia,Yucheng Ge,Qite Li,Jianling Lou,Xiaofei Yang,Biao Yang,Jun Feng,Hongliang Zang,Zhiqiang Chen,Yang Liu,Wei Liu,Sidong Chen,Hanzhou Yu,Jingjing Li,Yun Zhang,Feng Yang,Lei Yang,Nanru Ma,Lijie Sun,Dongxi Wang

DOI: https://doi.org/10.1016/j.nima.2018.04.041

2018-01-01

Abstract:The properties of some very thin (∼20μm) large-area Single-sided Silicon-Strip Detectors (SSSDs) were investigated by using the 12C-particles elastically scattered from a Au target. In the detection system, each thin SSSD was installed in front of a thick (300 μm or 500 μm) Double-sided Silicon-Strip Detector (DSSD) to form a ΔE−E particle-telescope. The energy calibration of these detectors was realized by varying the beam energy and also by the irradiation from a three-component α-particle source. The thickness distribution each SSSD is precisely determined from the energy loss in the thin layer, which was independently measured by the corresponding DSSD. It is found that, for the SSSD with the nominal thicknesses of ∼20μm, the real thickness may vary by several μm over the active area. The reason for this large non-uniformity still needs to be investigated. For the present application, this non-uniformity could be corrected according to the known pixel-thickness. This correction allows to restore a good particle identification (PID) performance for the entire large-area detector, the importance of which is demonstrated by an example of measuring the cluster-decays of the highly-excited resonant states in 16O.
Two-dimension Delay-Line Microchannel Plate Imaging Detector

朱小龙,马新文,沙杉,刘惠萍,魏宝仁,汪正林,曹士娉,钱东斌

DOI: https://doi.org/10.3969/j.issn.0258-0934.2004.03.010

2004-01-01

Abstract:The principle and the structure of two-dimension position sensitive detector with delay-line anode are described in this paper. A detector with effective area of 70mm diameter is obtained. The position resolution and the position response of the detector are examined by using a radiative source and 0.1mm resolution is achieved. Further optimization for running the detector is discussed as well.

Study of Two-Dimensional Position Sensitive Silicon Detector

The Current-position Characteristics of Two Dimensional Positio n Sensitive Detectors with Different Anode Structure

The Linearity Analysis of Different Two Dimensional Position Sensitive Detectors with Different Structure by Using Multisim

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

Analysis and Fabrication of A New Two Dimensional Near Infrared Pincushion Silicon Based Psd

Fabrication and Characterization of Two-Dimensional Pin-Cushion Position Sensitive Detectors

The Timing Performance of A Two-Dimensional Position-Sensitive Silicon Detector

Research on the performance parameter of 2D position sensitive detector

Fabrication and Characterization of a New Type 4×4 Arrayed Position-Sensitive Detector

Fabrication and characterization of a new type 4 × 4 arrayed position sensitive detector

Research on the 1D PSD

New Test and Analysis of Position-Sensitive-Silicon-Detector

Csi(Ti) Detector with Position-Sensitive Photomultiplier Readout

First investigation of a novel 2D position-sensitive semiconductor detector concept

Development of Si Multi-Strip Bi-Dimension Position Sensitive Detectors

A multi-electrode two-dimensional position sensitive diamond detector

Over 98% Linearity 4H-Sic Ultraviolet Position Sensitive Detector

Design and Experimental Study of a Two-Dimensional Position Sensitive X-ray Detector

Studies of 100 um-thick silicon strip detector with analog VLSI readout

Investigation of the Thickness Non-Uniformity of the Very Thin Silicon-Strip Detectors

Two-dimension Delay-Line Microchannel Plate Imaging Detector