Abstract:The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm−2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.

Heavy electron doping in monolayer MoS 2 on a freestanding N-face GaN substrate

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Influence of Polarities of GaN Substrates on Surface Morphologies and Physical Properties of Epitaxial Mg‐Doped GaN Films Grown by MOCVD

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

Self-Doped p-n Junction with High Carrier Concentration in 2D GaN/MoSSe Heterostructures: A First-Principles Study

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

Optical characterizations of GaN/MoS2 van der Waals heterojunctions with different band alignments

Tuning the Electronic Properties of Hexagonal Two-Dimensional GaN Monolayers via Doping for Enhanced Optoelectronic Applications

Origin of Improved Optical Quality of Monolayer MoS2 Grown on Nitride Substrates

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Self-doping effects and carrier mobility of the H-GaN-F and h-BN stacking hetero-structures

Absorption and emission modulation in MoS2-GaN (0001) heterostructure by interface phonon-exciton coupling

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Spontaneous N-Doping in Growing Monolayer MoS2 by Alkali Metal Compound-Promoted CVD.

Spontaneous n-Doping in Growing Monolayer MoS 2 by Alkali Metal Compound-Promoted CVD

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Implementation of the GaN Lateral Polarity Junction in a MESFET Utilizing Polar Doping Selectivity

Large-Area Monolayer MoS<sub>2</sub> Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

Large-Area Monolayer MoS 2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices