Abstract:Enhancing photoluminescence (PL) in single-layer transition metal dichalcogenides has garnered significant interest, particularly for advancing high-performance 2D electronics and optoelectronics. The combination of surface engineering and contemporary growth methods has provided a platform for investigating optical signals. In this study, we present variations in PL and Raman signals of single-layer MoS2 flakes grown conformally using the glass-assisted CVD method on square-patterned surfaces with varying well depths. PL spectroscopy revealed a systematic and pronounced enhancement in intensities as the valley thickness decreased from 285 nm to 225 nm. Conversely, for the hill regions of the samples, the PL intensity initially increased with decreasing valley thickness and then decreased, despite the hill regions having a constant thickness of 300 nm. On the other hand, PL maps did not exhibit a systematic dependence of intensities on the hill-valley thickness distinction, contrary to expected results based on literature data for similar materials on flat surfaces. The origin of the intensity oscillations was attributed to possible mechanisms, including thickness-dependent interference and strain-related exciton funneling effects. Additionally, Raman measurements revealed irregular variations in intensity in hill regions, dependent on the thicknesses of the underlying SiO2 layers. Furthermore, we observed that the sizes of the flakes increased as the well depths of the underlying patterned surface decreased. This phenomenon might be attributed to alterations in the carrier gas flow pattern and varying temperature gradients between the hills and valleys. These results hold substantial potential to open new avenues for the integration of 2D transition metal dichalcogenides into on-chip electronic and optoelectronic devices.

Origin of Improved Optical Quality of Monolayer MoS2 Grown on Nitride Substrates

Origin of Improved Optical Quality of Monolayer Molybdenum Disulfide Grown on Hexagonal Boron Nitride Substrate

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Remarkable Quality Improvement of As-Grown Monolayer MoS2 by Sulfur Vapor Pretreatment of SiO2/Si Substrates

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride

Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride

Enhanced Lspr Effect of Hexagonal Boron Nitride Substrate on Mos2 Photoluminescence

Optical Signal Investigation of Monolayer MoS2 Grown Via Glass-Assisted CVD On Patterned Surfaces

Epitaxial Monolayer MoS2 on Mica with Novel Photoluminescence.

Analysis of Photoluminescence Behavior of High-Quality Single-Layer MoS2

Shape-Uniform, High-Quality Monolayered MoS2 Crystals for Gate-Tunable Photoluminescence

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

Optical characterizations of GaN/MoS2 van der Waals heterojunctions with different band alignments

Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

Large-Area Monolayer MoS 2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

Heavy electron doping in monolayer MoS 2 on a freestanding N-face GaN substrate

Large-Area Monolayer MoS<sub>2</sub> Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices