Abstract:Due to the development of cost-efficient detector technologies in the NIR (Near Infrared), new areas of application are constantly being addressed. This affects autonomous driving, where LiDAR (Light Detection and Ranging) systems with better eye safety are being developed, as well as low-cost night vision cameras. Another area of application is NIR spectroscopy, e.g. in the areas of food monitoring, environmental research or medical technology. The increasing need for portable, low-cost analysis devices, for example for "on-site" measurements or for everyday life, is driving the development of highly miniaturized and low-cost lab-on-a-chip systems. The NIR detectors and NIR cameras available on the market are primarily based on materials from group III/V compound semiconductors, e.g. InGaAs. However, the CMOS (Complementary Metal Oxide Semiconductor) standard process cannot be used for the production of this technology, which significantly increases the cost factor and thus limits its use on the market. A promising alternative is offered by group IV based detectors, in particular Ge and GeSn detectors, which can be monolithically integrated on a Si substrate. As a result, such detector systems can be processed much more cost-efficiently with CMOS compatible standard technology. The NIR absorption properties are also comparable to III/V components. This paper reports on the monolithic integration of Ge and GeSn detector arrays on Si substrates for the realization of a camera system. The entire system consists of a photonic chip, a readout chip and a standard microcontroller, which is connected to a laptop via USB. The SNR (signal-to-noise ratio) is an important parameter for such an integrated system. The quantum efficiency of each individual pixel sensor has to be maximized and a high fill factor per pixel is aimed for. A particularly high fill factor is achieved here with optical light coupling via the substrate back-side, since the front-side metallization does not interfere with the optical coupling area. Furthermore, the metallization acts then as a mirror, the light thus passes through the absorption area twice and leads to a higher quantum efficiency. However, the main obstacle of Ge and GeSn, compared to III/V devices, is the higher intrinsic charge carrier concentration, which leads to a significantly higher dark current. A possible solution is the zero bias operation of the detector at the expected dark current minimum. The dark current is 3 orders of magnitude smaller at 0 V compared to an operating point at -1 V. Another criterion for the circuit is that a signal range or photocurrent supports a wide dynamic range (between nA and μA). For this purpose, the photocurrent is fed into the evaluation electronics via a triple cascaded current mirror. The measured value is output to a 12-bit ADC (Analog Digital Converter) integrated in the microcontroller via a current/voltage converter, two buffers and a sample hold element. With the help of additional multiplexers, the circuit can be used to read out several detectors and thus address a pixel matrix. We report on the fabrication of the photonic chip, which is carried out using CMOS compatible processes and MEMS (Micro-Electro-Mechanical System) processes in combination with an epitaxial growth of the active device structures. The photonic chip is based on 150 mm Si substrates, which were prepared first with multiple ion implantation steps. The active pin detector layers, consisting of Si and Ge or GeSn, were grown by means of molecular beam epitaxy. Afterwards, deep trenches were now etched between the detectors in a MEMS process to minimize crosstalk between neighboring pixels. The detectors were structured then using CMOS processes, and the backside is polished or structured. Finally, a two layer frontside-metallization is applied for the contacts. We demonstrate the functionality of both two-dimensional and linear detector arrays and show possible applications such as NIR cameras or NIR spectrometers.

Laser-Crystallized Epitaxial Germanium on Silicon-Based Near-Infrared Photodetector

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet

Visible-NIR Photodetectors Based on Low-Dimensional GeSe Micro-Crystals: Designed Morphology and Improved Photoresponsivity.

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

NIR Photodetector Based on Nanosecond Laser-Modified Silicon

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Room-temperature Long-Wave Infrared Detector with Thin Double Layers of Amorphous Germanium and Amorphous Silicon.

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate

Near‐Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals

Single-Walled Carbon Nanotube-Germanium Heterojunction for High-Performance Near-Infrared Photodetector

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Monolithic Integration of Gesn on Si for IR Camera Demonstration

Nanostructured germanium with >99 % absorption at 300-1600 nm wavelengths

Manufacture and study CdTe/Ge/Si of broadband ultraviolet–visible photodetector