Abstract:Electronic and optoelectronic devices based on two-dimensional (2D)/three-dimensional (3D) semiconductor heterostructures, combining their respective advantages, have attracted wide attention. In this work, we fabricate a mixed-dimensional GeSe/Ge heterojunction field effect transistor (HJFET), which combines high carrier mobility of 2D GeSe and near-infrared detection of 3D bulk Ge. A significant on/off ratio of 5 × 102 and a transconductance of 0.23 μS are obtained, indicating a convincing gate control ability. Under 532 nm illumination, the HJFET exhibits an excellent photoresponse with high responsivity, detectivity, and external quantum efficiency (88.4 A/W, 2.25 × 1012 Jones, and 3280%), and it also can detect the infrared light of 1550 nm due to the absorption of Ge gate. The photogenerated electrons at 532 nm flow to Ge back gate when HJFET works at the reverse voltage bias, which prolongs the lifetime of photogenerated holes in the GeSe channel, thus increasing photocurrent and obtaining better the detection properties. Additionally, the transistor also exhibits polarization-sensitive behavior with a dichroic ratio of 2.37, which can be attributed to the strong anisotropic absorption property of GeSe in armchair and zigzag directions. These results indicate that the device has promising potential as a multifunctional optoelectronic unit, including on/off characteristic, broadband photodetection, and polarization sensitivity.

Visible-NIR Photodetectors Based on Low-Dimensional GeSe Micro-Crystals: Designed Morphology and Improved Photoresponsivity.

Mono-crystalline Ge1-xSnxSe micro-sheets with hexagonal morphologies for Visible-NIR photodetectors: Increased carrier concentration, narrowed band gap and improved performances

NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet

Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets.

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

High-Performance Visible Light Photodetector Based on BiSeI Single Crystal

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

Laser-Crystallized Epitaxial Germanium on Silicon-Based Near-Infrared Photodetector

Synthesis of single-crystalline GeS nanoribbons for high sensitivity visible-light photodetectors

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

Synthesis of few-layer GaSe nanosheets for high performance photodetectors.

Dramatic Increase in SWIR Detection for GeSn Strip Detector with Graphene Hybrid Structure

The GeSe/SnSe heterojunction photodetector with self-powered characteristics and high infrared response performance

Infrared Photodetectors: Extrinsic Photoconduction Induced Short‐Wavelength Infrared Photodetectors Based on Ge‐Based Chalcogenides (Small 4/2021)

Highly Sensitive Photodetector Based on the N-Si/p-gase Vertical Heterojunction

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

PbSe Nanocrystals Produced by Facile Liquid Phase Exfoliation for Efficient UV–Vis Photodetectors

Visible–infrared dual-band detection with a polarization sensitivity based on GeSe/Ge heterojunction field effect transistor

Self-catalytic VLS growth one dimensional layered GaSe nanobelts for high performance photodetectors