Abstract:High‐quality epitaxial β‐(AlxGa1‐x)2O3 films are grown by RF magnetic sputtering. The Al content in β‐(AlxGa1‐x)2O3 can tune the energy bandgap increased up to 6.10 eV. The Ga d states of DOS calculated by DFT are redistributed along valence to conduction bands by abundant introduced Al p states. These results provide potential application of β‐(AlxGa1‐x)2O3 in photonic devices. Bandgap engineering in monoclinic gallium oxide (β‐Ga2O3) is a powerful strategy for designing semiconductor optoelectronic devices with specific functionalities. In this work, aluminum doping is utilized to modulate the bandgap of Ga2O3. By growing epitaxial β‐(AlxGa1‐x)2O3 (0≤ x≤ 0.84) films on c‐plane sapphire substrates using RF magnetron sputtering, it allowed to tune the energy bandgap, achieving values as high as 6.10 eV. The increased luminescence intensity is attributed to the recombination between donor and acceptor transitions induced by Al doping, resulting in more defects. Additionally, the luminescent band experienced blueshifts due to the enhanced bandgaps. Moreover, density of functional theory (DFT) simulations confirmed the sensitivity of the bandgap to Al content, distinguishing between Ga‐dominated (x 0.5) β‐(AlxGa1‐x)2O3. Notably, the bandgap increased more rapidly in Ga‐dominated structures compared to Al‐dominated ones. The electronic structure analysis revealed a redistribution of Ga d states from valence to conduction bands, attributed to the introduction of numerous Al p states. These combined experimental and detailed electronic structure investigations proved crucial insights for designing the structure and exploring potential applications of β‐(AlxGa1‐x)2O3 in photonic devices.

Excitation dependent and time resolved photoluminescence of β-Ga2O3, β-(Ga0.955Al0.045)2O3 and β-(Ga0.91In0.09)2O3 epitaxial layers grown by pulsed laser deposition

Photoluminescence spectroscopy of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3

Photoluminescence of Ga2O3 Thin Film and Characterization of Laser Ablated Species

The Photoluminescence Properties of β-Ga2O3 Thin Films

Luminescence Features of Bulk Crystals β-(GaxAl1–x)2O3

Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

[Structure and luminescence properties of Ga2O3 : Cr3+ by Al doping]

Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β−Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Infrared Luminescence and Amplification Properties of Bi-doped GeO 2 − Ga 2 O 3 − Al 2 O 3 Glasses

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*

Realization and optimization of enhanced and spectral selective photoluminescence in size and phase controlled nanocrystalline Ga2O3 films made by pulsed laser deposition

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Luminescence Studies of Er:Ga2O3 Films: Effect of Growth and Annealing Temperatures and Oxygen Pressures

Investigation of the surface band structure and the evolution of defects in β-(AlxGa1−x)2O3

Photoluminescence and Electroluminescence of (Gd2O3-Ga2O3):Ce Thin Film

Structural, Optical, and Electronic Properties of Epitaxial β‐(AlxGa1‐x)2O3 Films for Optoelectronic Devices

Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method

Photoluminescence from Bi5(GaCl4)3 molecular crystal

Time-Resolved Exciton Luminescence In Gan Grown By Metalorganic Chemical-Vapor-Deposition

Photoluminescence and Electroluminescence of (Gd<sub><b>2</b></sub>O<sub><b>3</b></sub>–Ga<sub><b>2</b></sub>O<sub><b>3</b></sub>):Ce Thin Film

Photoluminescence of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3 under pressure