Photoluminescence and Electroluminescence of (Gd2O3-Ga2O3):Ce Thin Film

Xiulai Xu,Yanbing Hou,Zheng Xu,Xiaowei Wang,Xurong Xu
DOI: https://doi.org/10.1143/JJAP.39.1769
2000-01-01
Abstract:A novel electroluminescence oxide phosphor (Gd2O3-Ga2O3):Ce has been prepared by electron beam evaporation. The emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm. However, the electroluminescence of the (Gd2O3-Ga2O3):Ce thin film have four emission peaks at 358nm, 390nm, 439nm and 510nm, respectively. The optical absorption of (Gd2O3-Ga2O3):Ce thin film and the photoluminescence of composite materials with various ratios of Ga2O3/(Gd2O3+Ga2O3) have also been described to investigate the origin of emission of photoluminescence and electroluminescence.
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