Photoluminescence and Electroluminescence of (Gd<sub><b>2</b></sub>O<sub><b>3</b></sub>–Ga<sub><b>2</b></sub>O<sub><b>3</b></sub>):Ce Thin Film

Xiulai Xu,Yanbing Hou,Zheng Xu,Xiaowei Wang,Xurong Xu
DOI: https://doi.org/10.1143/jjap.39.1769
IF: 1.5
2000-01-01
Japanese Journal of Applied Physics
Abstract:A novel electroluminescence oxide phosphor (Gd2O3–Ga2O3):Ce has been prepared by electron beam evaporation. The emission peaks of photoluminescence lie at 390 nm and a shoulder at 440 nm. However, the electroluminescence of the (Gd2O3–Ga2O3):Ce thin film have four emission peaks at 358 nm, 390 nm, 439 nm and 510 nm, respectively. The optical absorption of (Gd2O3–Ga2O3):Ce thin film and the photoluminescence of composite materials with various ratios of Ga2O3/(Gd2O3+Ga2O3) have also been described to investigate the origin of emission of photoluminescence and electroluminescence.
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