Abstract:Graphene quantum dots (GQDs) doped InGaO (IGO) thin film transistors (TFTs) have been fabricated based on solution-driven ZrO x as gate dielectrics. Compare to pure IGO TFTs, superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping concentration. It has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of 0.3 mg·ml −1 have the optimized performances, including field-effect mobility ( μ FE ) of 22.02 cm 2 ·V –1 ·s −1 , on/off current ratio ( I on / I off ) of 7.06 × 10 7 , subthreshold swing (SS) of 0.09 V⋅dec −1 , hysteresis of 0.04 V and interfacial trap states ( D it ) of 1.03 × 10 12 cm −2 . In addition, bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized GQDs-IGO-TFTs. The GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress (PBS) test and negative bias stress (NBS) test for 3600 s, respectively. And it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s, respectively. Meanwhile, it showed smaller threshold voltage shift of 0.20 and 0.22 V for green light under PBS and NBS test for 3600 s, respectively. It also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress (PBIS) test and negative bias illumination stress (NBIS) test for 3600 s, respectively. Low-frequency noise (LFN) characteristics of GQDs-IGO/ZrO x TFTs indicated that the noise source came from the fluctuations in mobility. Finally, a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrO x TFT, demonstrating good dynamic response behavior and a maximum gain of 7.4. These experimental results have suggested that solution-processed GQDs-IGO/ZrO x TFT may envision potential applications in low-cost and large-area electronics. Graphical

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