Batches of ultra-thin transistors made from 2D materials

Elizabeth Gibney

DOI: https://doi.org/10.1038/nature.2015.17435

IF: 64.8

2015-04-29

Nature

Abstract:Growth of large-area semiconductor films opens up possibilities in flexible electronics.

multidisciplinary sciences

What problem does this paper attempt to address?

Ultra-thin transistors and circuits for conformable electronics

Federico Parenti,Riccardo Sargeni,Elisabetta Dimaggio,Francesco Pieri,Filippo Fabbri,Tommaso Losi,Fabrizio Antonio Viola,Arindam Bala,Zhenyu Wang,Andras Kis,Mario Caironi,Gianluca Fiori

2024-06-24

Abstract:Adapting electronics to perfectly conform to non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic and scientific interest ranging from health to robotics, wearable electronics, human machine interface and Internet of Things. The key to success lies in defining a technology that can lead to the fabrication of ultra-thin devices while exploiting materials that are ultimately thin, with high mechanical flexibility and excellent electrical properties. Here, we report a hybrid approach for the definition of high-performance, ultra-thin and conformable electronic devices and circuits, based on the integration of ultimately thin semiconducting transition metal dichalcogenides (TMDC), i.e., MoS2, with organic gate dielectric material, i.e., polyvinyl formal (PVF) combined with the ink-jet printing of conductive PEDOT:PSS ink for electrodes definition. Through this cost-effective, fully bottom-up and solution-based approach, transistors and simple digital and analogue circuits are fabricated by a sequential stacking of ultrathin (nanometer) layers on a few micron thick polyimide substrate, which guarantees the high flexibility mandatory for the targeted applications.

Applied Physics,Materials Science
Printed transistors made of 2D material-based inks

Silvia Conti,Gabriele Calabrese,Khaled Parvez,Lorenzo Pimpolari,Francesco Pieri,Giuseppe Iannaccone,Cinzia Casiraghi,Gianluca Fiori

DOI: https://doi.org/10.1038/s41578-023-00585-7

IF: 83.5

2023-08-25

Nature Reviews Materials

Abstract:Large-area electronics for the Internet of Things requires a new generation of light-weight, flexible, low-power electronics, based on advanced materials able to provide high-throughput fabrication of reliable, stable and cost-effective field-effect transistors that can be easily integrated onto flexible substrates such as plastic, paper and textiles. The family of 2D materials comprises a range of crystals with different chemical composition, structures and electronic properties that can be used as building blocks in transistors. Solution processing of 2D materials does not require the use of glove boxes, can be performed with minimal chemical processing and enables the use of printing technologies for device fabrication — these factors represent a critical advantage over traditional high-performance materials in terms of ease of processing, compatibility with flexible substrates, fabrication costs, large-volume manufacturing and scalability. Nevertheless, the electronic quality of solution-processed 2D materials is a bottleneck for the development of next-generation printed and flexible devices. This Review surveys solution-processed 2D material-based transistors, discussing the figures of merit, state of art and performance limits of devices, and describes the open challenges and future perspectives of this field.

materials science, multidisciplinary,nanoscience & nanotechnology
Thin-film transistors for large-area electronics

Di Geng,Kai Wang,Ling Li,Kris Myny,Arokia Nathan,Jin Jang,Yue Kuo,Ming Liu

DOI: https://doi.org/10.1038/s41928-023-01095-8

IF: 33.255

2023-12-20

Nature Electronics

Abstract:Nature Electronics, Published online: 19 December 2023; doi:10.1038/s41928-023-01095-8 This Review examines the development of thin-film transistors for use in displays, sensors, digital circuits and memory, as well as their potential for future application in emerging technologies such as neuromorphic computing.

engineering, electrical & electronic
Ultrathin Silicon Circuits with Strain‐Isolation Layers and Mesh Layouts for High‐Performance Electronics on Fabric, Vinyl, Leather, and Paper

Dae-Hyeong Kim,Yun-Soung Kim,Jian Wu,Zhuangjian Liu,Jizhou Song,Hoon-Sik Kim,Yonggang Y. Huang,Keh-Chih Hwang,John A. Rogers

DOI: https://doi.org/10.1002/adma.200900405

IF: 29.4

2009-01-01

Advanced Materials

Abstract:We present various stretchable high-performance CMOS circuit demonstrations on unconventional substrates, such as fabric, vinyl, leather, and paper. Electronics on such substrates, especially paper, open up new and important application possibilities for electronics. Theoretical analysis reveals the underlying mechanics of these systems; electrical tests under mechanical cycling demonstrate the robustness of the designs.
Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets

Xiangxiang Gao,Hai-Yang Liu,Jincheng Zhang,Jian Zhu,Jingjing Chang,Yue Hao

DOI: https://doi.org/10.3390/mi13060956

IF: 3.4

2022-06-17

Micromachines

Abstract:The wafer-scale fabrication of two-dimensional (2D) semiconductor thin films is the key to the preparation of large-area electronic devices. Although chemical vapor deposition (CVD) solves this problem to a certain extent, complex processes are required to realize the transfer of thin films from the growth substrate to the device substrate, not to mention its harsh reaction conditions. The solution-based synthesis and assembly of 2D semiconductors could realize the large-scale preparation of 2D semiconductor thin films economically. In this work, indium selenide (In2Se3) nanosheets with uniform sizes and thicknesses were prepared by the electrochemical intercalation of quaternary ammonium ions into bulk crystals. Layer-by-layer (LbL) assembly was used to fabricate scalable and uniform In2Se3 thin films by coordinating In2Se3 with poly(diallyldimethylammonium chloride) (PDDA). Field-effect transistors (FETs) made from a single In2Se3 flake and In2Se3 thin films showed mobilities of 12.8 cm2·V−1·s−1 and 0.4 cm2·V−1·s−1, respectively, and on/off ratios of >103. The solution self-assembled In2Se3 thin films enriches the research on wafer-scale 2D semiconductor thin films for electronics and optoelectronics and has broad prospects in high-performance and large-area flexible electronics.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Flexible small-channel thin-film transistors by electrohydrodynamic lithography

Yajiang Ding,Chen Zhu,Jianpeng Liu,Yongqing Duan,Zhengran Yi,Jian Xiao,Shuai Wang,YongAn Huang,Zhouping Yin

DOI: https://doi.org/10.1039/c7nr06075k

IF: 6.7

2017-12-14

Nanoscale

Abstract:Small-channel organic thin-film transistors (OTFTs) are an essential component of microelectronic devices. With the advent of flexible electronics, the fabrication of OTFTs still faces numerous hurdles in the realization of highly-functional, devices of commercial value. Herein, a concise and efficient procedure is proposed for the fabrication of flexible, small-channel organic thin-film transistor (OTFT) arrays on large-area substrates that circumvents the use of photolithography. By employing a low-cost and high-resolution mechano-electrospinning technology, large-scale micro/nanofiber-based patterns can be digitally printed on flexible substrates (Si wafer or plastic), which can act as the channel mask of TFT instead of a photolithography reticle. The dimensions of the micro/nanochannel can be manipulated by tuning the processing parameters such as the nozzle-to-substrate distance, applied voltage, and fluid supply. The devices exhibit excellent electrical properties with high mobilities (∼0.62 cm2 V-1 s-1) and high on/off current ratios (∼2.47 × 106), and they are able to maintain stability upon being bent from 25 mm to 2.75 mm (bending radius) over 120 testing cycles. This electrohydrodynamic lithography-based approach is a digital, programmable, and reliable alternative for easily fabricating flexible, small-channel OTFTs, which can be integrated into flexible and wearable devices.
Ultralow-voltage All-Carbon Low-Dimensional-material Flexible Transistors Integrated by Room-Temperature Photolithography Incorporated Filtration.

Chunhui Du,Min Zhang,Qiuyue Huang,Shengdong Zhang,Yang Chai

DOI: https://doi.org/10.1039/c9nr02511a

IF: 6.7

2019-01-01

Nanoscale

Abstract:Low dimensional materials (LDMs) have drawn world-wide attention as potential candidates applied in flexible and wearable electronics. It is an attractive research topic to systematically integrate all-LDMs to realize flexible electronics. However, it is difficult to pattern LDMs by conventional photolithography and plasma etching without harming the other overlapped analogous components. Here, we propose and realize independent-operation all-LDM flexible transistors integrated into a 2-inch substrate using the proposed photolithography incorporated filtration (PIF) platform. The transistors consisting of only one-dimensional carbon nanotubes and two-dimensional graphene oxide show an ultralow operating voltage of less than -1 V, an extraordinary subthreshold swing (SS) of 170 mV dec-1, a low threshold voltage (Vth) of -0.3 V and a high carrier mobility up to 105 cm2 V-1 s-1. Moreover, the device shows a small bending radius of 1 mm and a transistor transparency of 94%. The full room-temperature process further demonstrates the great potential of applying the proposed devices and the PIF platform to future high-performance flexible transparent electronics. This work provides a novel route to tackle the difficulty in integrating solution processed LDMs.
Ultrathin Transistors and Circuits for Conformable Electronics

Federico Parenti,Riccardo Sargeni,Elisabetta Dimaggio,Francesco Pieri,Filippo Fabbri,Tommaso Losi,Fabrizio Antonio Viola,Arindam Bala,Zhenyu Wang,Andras Kis,Mario Caironi,Gianluca Fiori

DOI: https://doi.org/10.1021/acs.nanolett.4c04930

IF: 10.8

2024-11-05

Nano Letters

Abstract:Adapting electronics to perfectly conform to nonplanar and rough surfaces, such as human skin, is a challenging task, which could open up new applications in fields of high economic and scientific interest, ranging from health to robotics, human-machine interface, and Internet of Things. The key to success lies in defining a technology that can lead to ultrathin devices, exploiting ultimately thin materials, with high mechanical flexibility and excellent electrical properties. Here, we report a...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Two dimensional semiconducting materials for ultimately scaled transistors

Tianyao Wei,Zichao Han,Xinyi Zhong,Qingyu Xiao,Tao Liu,Du Xiang

DOI: https://doi.org/10.1016/j.isci.2022.105160

IF: 5.8

2022-10-21

iScience

Abstract:Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.

multidisciplinary sciences
Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Mervin Zhao,Yu Ye,Yimo Han,Yang Xia,Hanyu Zhu,Siqi Wang,Yuan Wang,David A. Muller,Xiang Zhang

DOI: https://doi.org/10.1038/nnano.2016.115

IF: 38.3

2015-01-01

Nature Nanotechnology

Abstract:Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have challenges due to the complex fabrication techniques required for large-scale applications. Two-dimensional (2D) gapless graphene and semiconducting transition metal dichalcogenides (TMDCs) have emerged as promising electronic materials due to their atomic thickness, chemical stability and scalability. Difficulties in the assembly of 2D electronic structures arise in the precise spatial control over the metallic and semiconducting atomic thin films. Ultimately, this impedes the maturity of integrating atomic elements in modern electronics. Here, we report the large-scale spatially controlled synthesis of the single-layer semiconductor molybdenum disulfide (MoS2) laterally in contact with conductive graphene. Transition electron microscope (TEM) studies reveal that the single-layer MoS2 nucleates at the edge of the graphene, creating a lateral 2D heterostructure. We demonstrate such chemically assembled 2D atomic transistors exhibit high transconductance (10 uS), on-off ratios (10^6), and mobility (20 cm^2 V^-1 s^-1). We assemble 2D logic circuits, such as a heterostructure NMOS inverter with a high voltage gain, up to 70, enabled by the precise site selectivity from atomically thin conducting and semiconducting crystals. This scalable chemical assembly of 2D heterostructures may usher in a new era in two-dimensional electronic circuitry and computing.
Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics

Ziyu Ming,Haoran Sun,Hu Wang,Zhe Sheng,Yue Wang,Zengxing Zhang

DOI: https://doi.org/10.1021/acsami.4c06602

2024-08-28

Abstract:The unique features of two-dimensional (2D) materials provide significant opportunities for the development of transparent and flexible electronics. Recently, ambipolar 2D semiconductors have advanced innovative applications such as CMOS-like circuits, reconfigurable circuits, and ultrafast neuromorphic image sensors. Here, we report on the fabrication of full 2D ambipolar field-effect transistors (FETs), in which graphene serves as the source/drain/gate electrodes, WSe2 is for the channel, and h-BN is for the dielectric. The produced ambipolar FETs exhibit comparable on-currents in the n-branch and p-branch with on/off ratios up to 108. By using two ambipolar FETs in series, a CMOS-like inverter is demonstrated with a maximum gain of up to 147, which can work in both the first and third quadrants by controlling the supply voltages and input voltages. The full 2D ambipolar FETs yield a transmittance of over 70% for visible light on transparent glass and achieve a curvature radius of less than 0.5 cm for bending on polyethylene terephthalate (PET) substrate. The work is helpful for the application of ambipolar 2D materials-based devices in transparent and flexible electronics.
Two-Dimensional Van Der Waals Thin Film and Device

Liping Liao,Evgeniya Kovalska,Jakub Regner,Qunliang Song,Zdeněk Sofer

DOI: https://doi.org/10.1002/smll.202303638

IF: 13.3

Small

Abstract:In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.
Chemical assembly of atomically thin transistors and circuits in a large scale

Mervin Zhao,Yu Ye,Yimo Han,Yang Xia,Hanyu Zhu,Yuan Wang,David A. Muller,Xiang Zhang

DOI: https://doi.org/10.1038/nnano.2016.115

2015-12-16

Abstract:Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have challenges due to the complex fabrication techniques required for large-scale applications. Two-dimensional (2D) gapless graphene and semiconducting transition metal dichalcogenides (TMDCs) have emerged as promising electronic materials due to their atomic thickness, chemical stability and scalability. Difficulties in the assembly of 2D electronic structures arise in the precise spatial control over the metallic and semiconducting atomic thin films. Ultimately, this impedes the maturity of integrating atomic elements in modern electronics. Here, we report the large-scale spatially controlled synthesis of the single-layer semiconductor molybdenum disulfide (MoS2) laterally in contact with conductive graphene. Transition electron microscope (TEM) studies reveal that the single-layer MoS2 nucleates at the edge of the graphene, creating a lateral 2D heterostructure. We demonstrate such chemically assembled 2D atomic transistors exhibit high transconductance (10 uS), on-off ratios (10^6), and mobility (20 cm^2 V^-1 s^-1). We assemble 2D logic circuits, such as a heterostructure NMOS inverter with a high voltage gain, up to 70, enabled by the precise site selectivity from atomically thin conducting and semiconducting crystals. This scalable chemical assembly of 2D heterostructures may usher in a new era in two-dimensional electronic circuitry and computing.

Materials Science,Mesoscale and Nanoscale Physics
High-Resolution Van der Waals Stencil Lithography for 2D Transistors

Wenjing Song,Lingan Kong,Quanyang Tao,Qing Liu,Xiangdong Yang,Jia Li,Huigao Duan,Xidong Duan,Lei Liao,Yuan Liu

DOI: https://doi.org/10.1002/smll.202101209

IF: 13.3

Small

Abstract:2D semiconductors have attracted tremendous attention as an atomically thin channel for transistors with superior immunity to short-channel effects. However, with atomic thin structure, the delicate 2D lattice is not fully compatible with conventional lithography processes that typically involve high-energy photon/electron radiation and unavoidable polymer residues, posing a key limitation for high performance 2D transistors. Here, a novel van der Waals (vdW) stencil lithography technique based on dry mask lamination process is developed. By pre-fabricating polymethyl methacrylate (PMMA) resist with designed patterns, the whole PMMA mask layers could be mechanically released from the sacrifice wafer and physically laminated on top of various 2D semiconductors. The vdW stencil lithography ensures pristine 2D surface without any high-energy electron/photon radiation, polymer residues, or chemical doping effects in conventional lithography process; and the soft nature of PMMA enables intimate contact between the mask and the 2D materials without physical gap, leading to ultra-high resolution down to 60 nm. Together, by applying vdW stencil lithography for 2D semiconductors, high performance transistors are demonstrated. Our method not only demonstrates improved 2D transistor performance without lithography induced damages, but also provides a new vdW stencil lithography technique for 2D materials with high resolution.
Highly Flexible Electronics from Scalable Vertical Thin Film Transistors

Yuan Liu,Hailong Zhou,Rui Cheng,Woojong Yu,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1021/nl404484s

IF: 10.8

2014-02-12

Nano Letters

Abstract:Flexible thin-film transistors (TFTs) are of central importance for diverse electronic and particularly macroelectronic applications. The current TFTs using organic or inorganic thin film semiconductors are usually limited by either poor electrical performance or insufficient mechanical flexibility. Here, we report a new design of highly flexible vertical TFTs (VTFTs) with superior electrical performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 10(5). The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. With large area graphene and IGZO thin film available, our strategy is intrinsically scalable for large scale integration of VTFT arrays and logic circuits, opening up a new pathway to highly flexible macroelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Thin Film Transistors Based on Two Dimensional Graphene and Graphene/semiconductor Heterojunctions

Zhongcheng Zhu,Imran Murtaza,Hong Meng,Wei Huang

DOI: https://doi.org/10.1039/c6ra27674a

IF: 4.036

2017-01-01

RSC Advances

Abstract:During the past few years, two-dimensional (2D) layered materials have emerged as the most fundamental building blocks of a wide variety of optoelectronic devices.
Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications

Nikolaos Aspiotis,Katrina Morgan,Benjamin März,Knut Müller-Caspary,Martin Ebert,Chung-Che Huang,Daniel W. Hewak,Sayani Majumdar,Ioannis Zeimpekis

DOI: https://doi.org/10.48550/arXiv.2203.10309

2022-03-19

Abstract:This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm^2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10^7. Additionally, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at +-5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.

Applied Physics,Materials Science
Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das,Amritanand Sebastian,Eric Pop,Connor J. McClellan,Aaron D. Franklin,Tibor Grasser,Theresia Knobloch,Yury Illarionov,Ashish V. Penumatcha,Joerg Appenzeller,Zhihong Chen,Wenjuan Zhu,Inge Asselberghs,Lain-Jong Li,Uygar E. Avci,Navakanta Bhat,Thomas D. Anthopoulos,Rajendra Singh

DOI: https://doi.org/10.1038/s41928-021-00670-1

IF: 33.255

2021-11-01

Nature Electronics

Abstract:Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or heterogeneous integration remains to be determined. To achieve this, multiple challenges must be overcome, including reducing the contact resistance, developing stable and controllable doping schemes, advancing mobility engineering and improving high-κ dielectric integration. The large-area growth of uniform 2D layers is also required to ensure low defect density, low device-to-device variation and clean interfaces. Here we review the development of 2D field-effect transistors for use in future VLSI technologies. We consider the key performance indicators for aggressively scaled 2D transistors and discuss how these should be extracted and reported. We also highlight potential applications of 2D transistors in conventional micro/nanoelectronics, neuromorphic computing, advanced sensing, data storage and future interconnect technologies.

engineering, electrical & electronic
Ultrastable Large-Area Atomically Flat 2D Polymer Dielectric for Low-Voltage Flexible Organic Field-Effect Transistors

Jiamin Wang,Jiangyan Yuan,Bin Li,Zhaofeng Wang,Chunli Ma,Shuyuan Yang,Jiarong Yao,Yiwen Ren,Xianshuo Wu,Fangxu Yang,Rongjin Li,Wenping Hu,Sheng-Bin Lei

DOI: https://doi.org/10.1039/d2tc05059e

IF: 6.4

2023-02-08

Journal of Materials Chemistry C

Abstract:2D polymers (2DPs) are superb candidates as dielectric layers for flexible organic field-effect transistors (OFETs) because of their fascinating features including high stability, solution processibility, and inherent flexibility. However, the challenge to produce smooth and large-area 2DP thin films hinders the evaluation of their fundamental properties as gate dielectric layer for flexible OFETs. Here, ultrastable centimeter-sized atomically flat 2DP thin films are produced by interfacial polymerization at the air-liquid interface. Solubility, spreading and reaction time are found to be key indispensable factors in determining the production of smooth and large-area 2DPs. Benefiting from their inherent properties, the 2DP thin films exhibit not only excellent insulating properties, but also high solvent tolerance and high thermal stability, ensuring the construction of high-performance low-voltage flexible OFETs. These results shed light on a promising class of dielectric material with both high quality and high stability for wearable electronics.

materials science, multidisciplinary,physics, applied
High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts

Zhiyun Wu,Shuiren Liu,Juzhong Zhang,Hanyu Jia,Qingqing Sun,Xiaoguang Hu,Lingxian Meng,Xuying Liu

2023-06-25

Abstract:Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation was implemented for formation of FLP-free interfacial states by eliminating chemical disorder and crystal defects arising from metal deposition4-9. However, technical and principal challenges are still existing towards high-yield, wafer-scalable and low-cost integration of TFT devices. Herein, we developed a general, scaling-up strategy to fabricate large-scale, high-performance FLP-free organic TFT (OTFT) arrays by using printed vdW contacts consisting of MXene composite electrodes and 2, 7-dioctyl [1] benzothieno [3, 2-b] [1] benzothiophene (C8BTBT). Room-temperature processes allow for a physically stacked junction without any structural or chemical damages. The OTFT arrays can be printed on a large-area silicon wafer or plastic film with 100% yield, exhibit ultrahigh field-effect mobility ({\mu}_FE) over 17.0 square centimetres per volt per second (cm2 V-1s-1), high on/off ratio exceeding 108, relatively low contact resistance of 3k ohm micrometres. The underlying mechanism for the high device performance was unveiled by Kelvin Probe Force Microscopy (KPFM) combined with theoretical simulation. The results indicate that work function (W_F) of the printed electrodes can be tuned at a wide range of 4.8-5.6 eV, thus significantly lowering the charge-injection barrier at the contact interfaces with ideal FLP-free character (the interfacial factor reaches 0.99 \pm 0.02). This study paves a general strategy for achieving large-scale, high-performance thin-film electronics.

Applied Physics

Batches of ultra-thin transistors made from 2D materials

Ultra-thin transistors and circuits for conformable electronics

Printed transistors made of 2D material-based inks

Thin-film transistors for large-area electronics

Ultrathin Silicon Circuits with Strain‐Isolation Layers and Mesh Layouts for High‐Performance Electronics on Fabric, Vinyl, Leather, and Paper

Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets

Flexible small-channel thin-film transistors by electrohydrodynamic lithography

Ultralow-voltage All-Carbon Low-Dimensional-material Flexible Transistors Integrated by Room-Temperature Photolithography Incorporated Filtration.

Ultrathin Transistors and Circuits for Conformable Electronics

Two dimensional semiconducting materials for ultimately scaled transistors

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics

Two-Dimensional Van Der Waals Thin Film and Device

Chemical assembly of atomically thin transistors and circuits in a large scale

High-Resolution Van der Waals Stencil Lithography for 2D Transistors

Highly Flexible Electronics from Scalable Vertical Thin Film Transistors

Thin Film Transistors Based on Two Dimensional Graphene and Graphene/semiconductor Heterojunctions

Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications

Transistors based on two-dimensional materials for future integrated circuits

Ultrastable Large-Area Atomically Flat 2D Polymer Dielectric for Low-Voltage Flexible Organic Field-Effect Transistors

High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts