Thin Film Transistors Based on Two Dimensional Graphene and Graphene/semiconductor Heterojunctions

Zhongcheng Zhu,Imran Murtaza,Hong Meng,Wei Huang

DOI: https://doi.org/10.1039/c6ra27674a

IF: 4.036

2017-01-01

RSC Advances

Abstract:During the past few years, two-dimensional (2D) layered materials have emerged as the most fundamental building blocks of a wide variety of optoelectronic devices.

What problem does this paper attempt to address?

Graphene-based In-Plane Heterostructures for Atomically Thin Electronics

Jun-jiang Liu,Rui-jie Li,Hang Li,Yi-fei Li,Jun-he Yi,Hai-cheng Wang,Xiao-chong Zhao,Pei-zhi Liu,Jun-jie Guo,Lei Liu

DOI: https://doi.org/10.1016/s1872-5805(18)60352-x

IF: 5.7

2018-01-01

New Carbon Materials

Abstract:Two-dimensional materials are promising for use in atomically thin electronics, optoelectronics and flexible electronics because of their versatile band structures, optical transparency, easy transfer to a substrate and compatibility with current technology for integrated circuits. Three key components of contemporary integrated circuits, metals, insulators and semiconductors, have analogues in two-dimensional materials, i.e., graphene, boron nitride (BN) and transition metal dichalcogenides (TMDCs), respectively. Their controlled integration in a single layer is essential for achieving completely two-dimensional devices. In this review, we briefly describe the latest advances in graphene-based planar heterostructures, in graphene-BN, and in graphene-TMDC heterojunctions, focusing on the fabrication methods, the interfacial structure characteristics at the atomic scale and the properties of prototype electronic devices. The challenges and prospects in this field are also discussed.
Thin-film electronics based on all-2D van der Waals heterostructures

Xinling Liu,Xiaomin Yang,Weihui Sang,Hai Huang,Wenwu Li,Yen-Fu Lin,Junhao Chu

DOI: https://doi.org/10.1080/15980316.2021.1982782

2021-10-02

Journal of Information Display

Abstract:Two-dimensional (2D) layered materials including metal, semiconductor, and insulator have received extensive attention in recent years. The weak van-der-Waals (vdW) interactions between 2D materials layers enable them to isolate monolayers and restack into artificial 2D vdW heterostructures in the desired sequence. These assembled all-2D vdW heterostructures are promising platforms for fabricating next-generation electronics as well as optoelectronics. In particular, the all-2D vdW heterostructure devices composed entirely of 2D layered material have received extensive attention due to their natural thickness, atomically sharp heterointerfaces, and excellent mechanical flexibility. Herein, we firstly introduce 2D vdW heterostructures and their preparation methods. Secondly, the recent progress of field-effect transistors (FETs) and photodetectors based on all-2D vdW heterostructures are summarized. Finally, we discuss some challenges of all-2D vdW heterostructure-based devices for practical applications and offer personal perspectives toward the future development of thin-film electronics.

materials science, multidisciplinary
The Graphene–semiconductor Schottky Junction

Xinming Li,Hongwei Zhu

DOI: https://doi.org/10.1063/pt.3.3298

IF: 3.5

2016-01-01

Physics Today

Abstract:When a two-dimensional material abuts a three-dimensional one, a century-old electrical phenomenon finds new applicability.
Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures

Jinbing Cheng,Chunlan Wang,Xuming Zou,Lei Liao

DOI: https://doi.org/10.1002/adom.201800441

IF: 9

2018-08-28

Advanced Optical Materials

Abstract:2D materials, such as graphene, transition metal dichalcogenides, and black phosphorus, have become the most potential semiconductor materials in the field of optoelectronic devices due to their extraordinary properties. Owing to the layer‐dependent and appropriately sized bandgaps, photodetectors based on various 2D materials are designed and manufactured rationally. Utilizing the unique properties of 2D materials, many surprising physical phenomena of junctions based on 2D materials can be obtained after different 2D materials are stacked together. This makes heterojunctions more popular than 2D materials themselves, and the design of 2D materials for human beings is easier than ever. In this review, recent progress in optoelectronic applications based on 2D materials and their heterojunctions is summarized and discussed. Owing to their controllable optoelectronic properties, good mechanical flexibility, strong light–material interaction, and broadband optical response, 2D materials and their heterostructures are attracting increasing attention for photonic applications. The basic properties, syntheses, and working mechanisms of 2D materials used in optoelectronic devices are introduced, and the challenges to achieving practical applications of 2D materials are also discussed.

materials science, multidisciplinary,optics
Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Thanasis Georgiou,Rashid Jalil,Branson D. Belle,Liam Britnell,Roman V. Gorbachev,Sergey V. Morozov,Yong-Jin Kim,Ali Gholinia,Sarah J. Haigh,Oleg Makarovsky,Laurence Eaves,Leonid A. Ponomarenko,Andre K. Geim,Kostya S. Novoselov,Artem Mishchenko

DOI: https://doi.org/10.1038/nnano.2012.224

2012-11-22

Abstract:The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.

Mesoscale and Nanoscale Physics,Materials Science
Two-dimensional Heterostructures: Fabrication, Characterization, and Application

Hong Wang,Fucai Liu,Wei Fu,Zheyu Fang,Wu Zhou,Zheng Liu

DOI: https://doi.org/10.1039/c4nr03435j

IF: 6.7

2014-01-01

Nanoscale

Abstract:Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. In this article, we review recent progress on the fabrication, characterization, and applications of various 2D heterostructures.
High Performance Graphene/semiconductor Van Der Waals Heterostructure Optoelectronic Devices

Shisheng Lin,Yanghua Lu,Juan Xu,Sirui Feng,Jianfeng Li

DOI: https://doi.org/10.1016/j.nanoen.2017.07.036

IF: 17.6

2017-01-01

Nano Energy

Abstract:As a typical two-dimensional (2D) atomic thin material, the massless Dirac Fermions in graphene promise many unique physical properties, such as high carrier mobility and high light transmission. However, after a decade of research and a huge number of papers focusing on graphene, high performance graphene based optoelectronic devices is still lacked, which should be achieved for realizing competitive industrial graphene product. In this review, we point out high performance optoelectronic devices such as solar cells, photodetector and light emitting diodes can be demonstrated by properly marrying graphene with semiconductor. The fundamental physics of graphene/semiconductor heterostructure as well as its optoelectronic properties are comprehensively addressed. We suggest six strategies of improving the performance of graphene/semiconductor based optoelectronic devices. The outstanding light harvesting enhancement characteristic of surface plasmon is detailed represented to highlight its importance and potential. Especially, we indicate that graphene/semiconductor heterostructure solar cell can reach a power conversion efficiency of 30%.
Graphene‐Based Lateral Heterojunctions for 2D Integrated Circuits

Mohd.Musaib Haidari,Dong Jin Jang,Duhee Yoon,Hakseong Kim,Hong Kyw Choi,Yoonsik Yi,Jin Hong Kim,Jin‐Yong Ko,Dooho Lee,Eun Hee Kee,Hu Young Jeong,Jeong Young Park,Bae Ho Park,Jin Sik Choi

DOI: https://doi.org/10.1002/aelm.202300761

IF: 6.2

2024-02-18

Advanced Electronic Materials

Abstract:This study introduces a novel technique for fabricating lateral junctions between single‐layer graphene (SLG) and single‐layer oxidized graphene (SOG), forming lateral heterojunctions. Raman analysis reveals structural changes during excimer UV irradiation, and electrical measurements demonstrate varied properties in SOG‐patterned field‐effect transistors. Scanning Kelvin probe microscopy shows changes in surface potential and work function. This innovation simplifies the fabrication of graphene field‐effect transistors, paving the way for atomically thin integrated circuits. A method for patterning single‐layer graphene (SLG) and single‐layer oxidized graphene (SOG) within a continuous atomic layer to form lateral heterojunctions is presented. Raman spectroscopy is employed to investigate the evolution of defect‐related Raman peaks during excimer‐UV irradiation, facilitating the identification of structural changes and defect formation processes. Electrical transport measurements reveal that SOG‐patterned field‐effect transistors (FETs) exhibit varying characteristics depending on the degree of oxidation, thus offering the potential to tailor the electrical properties of graphene devices for specific requirements. Scanning Kelvin probe microscopy measurements reveal the surface potential and work function of the SOG regions compared with those of SLG. The effective functionality of the SOG pattern to operate as a resistor, allowing control of the electrical conductivity in the SOG‐patterned SLG channels, is demonstrated. This capability restricts the current flow while preserving the pristine electrical properties of the graphene channel. Moreover, the SOG pattern can serve as a potential barrier to constructing SLG‐SOG‐patterned integrated circuits, providing exciting opportunities for engineering advanced electronic components. This breakthrough in graphene devices simplifies the fabrication process of graphene‐based FETs and provides the foundation for developing atomically thin integrated circuits for a wide range of applications.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Meng Liang,Han Yan,Nasrullah Wazir,Changjian Zhou,Zichao Ma

DOI: https://doi.org/10.3390/nano14171408

2024-08-28

Abstract:As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.
Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics

Xinming Li,Li Tao,Zefeng Chen,Hui Fang,Xuesong Li,Xinran Wang,Jian-Bin Xu,Hongwei Zhu

DOI: https://doi.org/10.1063/1.4983646

IF: 15

2017-06-01

Applied Physics Reviews

Abstract:The exfoliation and identification of the two-dimensional (2D) single atomic layer of carbon have opened the opportunity to explore graphene and related 2D materials due to their unique properties. 2D materials are regarded as one of the most exciting solutions for next generation electronics and optoelectronics in the technological evolution of semiconductor technology. In this review, we focus on the core concept of “structure-property relationships” to explain the state-of-the-art of 2D materials and summarize the unique electrical and light-matter interaction properties in 2D materials. Based on this, we discuss and analyze the structural properties of 2D materials, such as defects and dopants, the number of layers, composition, phase, strain, and other structural characteristics, which could significantly alter the properties of 2D materials and hence affect the performance of semiconductor devices. In particular, the building blocks principles and potential electronic and optoelectronic applications based on 2D materials are explained and illustrated. Indeed, 2D materials and related heterostructures offer the promise for challenging the existing technologies and providing the chance to have social impact. More efforts are expected to propel this exciting field forward.

physics, applied
Two-dimensional semiconductors: recent progress and future perspectives

Xiufeng Song,Jinlian Hu,Haibo Zeng

DOI: https://doi.org/10.1039/c3tc00710c

IF: 6.4

2013-01-01

Journal of Materials Chemistry C

Abstract:Graphene with a sp2-honeycomb carbon lattice has drawn a large amount of attention due to its excellent properties and potential applications in many fields. Similar to the structure of graphene, two-dimensional semiconductors are its two-dimensional and isostructural counterparts based on the typical layer-structured semiconductors, such as boron nitride (h-BN) and transition metal dichalcogenides (e.g. MoS2 and WS2), whose layers are bound by weak van der Waals forces. Unlike the semi-metal features of graphene, the two-dimensional semiconductors are natural semiconductors with thicknesses on the atomic scale. When one of the dimensions is extremely reduced, the two-dimensional semiconductors exhibit some unique properties, such as a transition from indirect to direct semiconductor properties, and hence have great potential for applications in electronics, energy storage, sensors, catalysis and composites, which arise both from the dimension-reduced effect and from the modified electronic structure. In this feature article, recent developments in the synthesis, properties and applications of two-dimensional semiconductors are discussed. The reported virtues and novelties of two-dimensional semiconductors are highlighted and the current problems in their developing process are clarified, in addition to their challenges and future prospects.

materials science, multidisciplinary,physics, applied
Two-Dimensional Semiconductor Heterojunctions for Optoelectronics and Electronics

Qian Wang,Lin Zhang,Xuejuan Liu,Sha Li

DOI: https://doi.org/10.3389/fenrg.2021.802055

IF: 3.4

2021-12-20

Frontiers in Energy Research

Abstract:Two-dimensional (2D) layered semiconductors are current research hotspots on account of their wide variety of applications in electronics and optoelectronics due to their particular ultrathin nature. In this review, the band alignment engineering in heterojunctions composed of 2D van der Waals (vdW) layered semiconductors and their device applications in optoelectronics are provided. Various approaches that induced adjustability of vdW heterojunctions are summarized, mainly including composition and thickness modulations, strain, and electric fields. Furthermore, their perspectives on future developments in optoelectronics and electronics devices based on the newly unique physical and chemical properties are outlined.

energy & fuels
Emergent Elemental Two-Dimensional Materials Beyond Graphene

Yuanbo Zhang,Angel Rubio,Guy Le Lay

DOI: https://doi.org/10.1088/1361-6463/aa4e8b

2017-01-01

Journal of Physics D Applied Physics

Abstract:Two-dimensional (2D) materials may offer the ultimate scaling beyond the 5 nm gate length. The difficulty of reliably opening a band gap in graphene has led to the search for alternative, semiconducting 2D materials. Emerging classes of elemental 2D materials stand out for their compatibility with existing technologies and/or for their diverse, tunable electronic structures. Among this group, black phosphorene has recently shown superior semiconductor performances. Silicene and germanene feature Dirac-type band dispersions, much like graphene. Calculations show that most group IV and group V elements have one or more stable 2D allotropes, with properties potentially suitable for electronic and optoelectronic applications. Here, we review the advances in these fascinating elemental 2D materials and discuss progress and challenges in their applications in future opto-and nano-electronic devices.
Novel heterostructures by layering 2D materials

Lei Wang,Cory R Dean,Inanc Meric,Philip Kim,Ken Shepard,James Hone

2013-01-01

Abstract:Since the first isolation of single-layer graphene in 2004, this novel 2D material has continued to receive intense interest. Boron nitride has been identified as an ideal substrate on which to build graphene devices, improving mobilities close to that of suspended structures. The transition metal dichalcogenides are wide band-gap 2D semiconductors, whose applications are just now being explored. New layered heterostructures, fabricated by alternately stacking different sets of these materials, offers unlimited possibilities for exploring new device functionalities. The fabrication of multi-layered structures, however, has been problematic. I will describe a new process that allows unlimited stacking of multi-layer device structures and a novel method to electrically contact these graphene devices. The contact resistance is comparable to the lowest value measured among the conventional metal-graphene contact in …
2D Semiconductors for Specific Electronic Applications: from Device to System

Xiaohe Huang,Chunsen Liu,Peng Zhou

DOI: https://doi.org/10.1038/s41699-022-00327-3

IF: 10.516

2022-01-01

npj 2D Materials and Applications

Abstract:The shrinking of transistors has hit a wall of material degradation and the specialized electronic applications for complex scenarios have raised challenges in heterostructures integration. Intriguingly, two-dimensional (2D) materials have excellent performance even at monolayer. The rich band structures and the lattice-mismatch-free heterostructures can further develop specific mechanisms to meet the demands of various electronic systems. Here we review the progress of 2D semiconductors to develop specific electronic applications from devices to systems. Focusing on the ultra-thin high-performance nanosheets for transistor channels, we consider channel optimization, contact characteristics, dielectric integration. Then we examined 2D semiconductors for specific electronic functions including computing, memory and sense. Finally, we discuss the specific applications of functionalized arrays aiming at problems that are difficult to solve with bulk materials, like the fusion of memory and computation and the all-in-one system.
First-principles study of two-dimensional van der Waals heterojunctions

Wei Hu,Jinlong Yang

DOI: https://doi.org/10.1016/j.commatsci.2015.06.033

IF: 3.572

2016-02-01

Computational Materials Science

Abstract:Research on graphene and other two-dimensional (2D) materials, such as silicene, germanene, phosphorene, hexagonal boron nitride (h-BN), graphitic carbon nitride (g-C3N4), graphitic zinc oxide (g-ZnO) and molybdenum disulfide (MoS2), has recently received considerable interest owing to their outstanding properties and wide applications. Looking beyond this field, combining the electronic structures of 2D materials in ultrathin van der Waals heterojunctions has also emerged to widely study theoretically and experimentally to explore some new properties and potential applications beyond their single components. Here, this article reviews our recent theoretical studies on the structural, electronic, electrical and optical properties of 2D van der Waals heterojunctions using density functional theory calculations, including the Graphene/Silicene, Graphene/Phosphorene, Graphene/g-ZnO, Graphene/MoS2 and g-C3N4/MoS2 heterojunctions. Our theoretical simulations, designs and calculations show that novel 2D van der Waals heterojunctions provide a promising future for electronic, electrochemical, photovoltaic, photoresponsive and memory devices in the experiments.

materials science, multidisciplinary
Application of Graphene within Optoelectronic Devices and Transistors

F.V. Kusmartsev,W.M. Wu,M.P. Pierpoint,K.C. Yung

DOI: https://doi.org/10.48550/arXiv.1406.0809

2014-06-04

Abstract:Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in optoelectronic and semiconducting devices. Whereas on one hand, graphene is highly transparent due to its atomic thickness, the material does exhibit a strong interaction with photons. This has clear advantages over existing materials used in photonic devices such as Indium-based compounds. Moreover, the material can be used to 'trap' light and alter the incident wavelength, forming the basis of the plasmonic devices. We also highlight upon graphene's nonlinear optical response to an applied electric field, and the phenomenon of saturable absorption. Within the context of logical devices, graphene has no discernible band-gap. Therefore, generating one will be of utmost importance. Amongst many others, some existing methods to open this band-gap include chemical doping, deformation of the honeycomb structure, or the use of carbon nanotubes (CNTs). We shall also discuss various designs of transistors, including those which incorporate CNTs, and others which exploit the idea of quantum tunneling. A key advantage of the CNT transistor is that ballistic transport occurs throughout the CNT channel, with short channel effects being minimized. We shall also discuss recent developments of the graphene tunneling transistor, with emphasis being placed upon its operational mechanism. Finally, we provide perspective for incorporating graphene within high frequency devices, which do not require a pre-defined band-gap.

Materials Science
Optoelectronics based on 2D TMDs and heterostructures

Nengjie Huo,Yujue Yang,Jingbo Li

DOI: https://doi.org/10.1088/1674-4926/38/3/031002

2017-03-01

Journal of Semiconductors

Abstract:2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.

physics, condensed matter
InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Liangmei Wu,Jinan Shi,Zhang Zhou,Jiahao Yan,Aiwei Wang,Ce Bian,Jiajun Ma,Ruisong Ma,Hongtao Liu,Jiancui Chen,Yuan Huang,Wu Zhou,Lihong Bao,Min Ouyang,Sokrates T. Pantelides,Hong-Jun Gao

DOI: https://doi.org/10.1007/s12274-020-2757-1

IF: 9.9

2020-04-01

Nano Research

Abstract:Two-dimensional (2D) materials as channel materials provide a promising alternative route for future electronics and flexible electronics, but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric. Here we demonstrate an indium selenide (InSe)/hexagonal boron nitride (hBN)/graphite heterostructure as a 2D field-effect transistor (FET), with InSe as channel material, hBN as dielectric, and graphite as gate. The fabricated FETs feature high electron mobility up to 1,146 cm2V−1s−1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric. Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained. Taking advantages of the mechanical flexibility of these materials, we integrated the heterostructured InSe FET on a flexible substrate, exhibiting little modification of device performance at a high strain level of up to 2%. Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Graphene, hexagonal boron nitride, and their heterostructures: properties and applications

Jingang Wang,Fengcai Ma,Mengtao Sun

DOI: https://doi.org/10.1039/c7ra00260b

IF: 4.036

2017-01-01

RSC Advances

Abstract:In recent years, two-dimensional atomic-level thickness crystal materials have attracted widespread interest such as graphene, hexagonal boron nitride (h-BN), silicene, germanium, black phosphorus (BP), transition metal sulfides and so on.

chemistry, multidisciplinary

Thin Film Transistors Based on Two Dimensional Graphene and Graphene/semiconductor Heterojunctions

Graphene-based In-Plane Heterostructures for Atomically Thin Electronics

Thin-film electronics based on all-2D van der Waals heterostructures

The Graphene–semiconductor Schottky Junction

Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Two-dimensional Heterostructures: Fabrication, Characterization, and Application

High Performance Graphene/semiconductor Van Der Waals Heterostructure Optoelectronic Devices

Graphene‐Based Lateral Heterojunctions for 2D Integrated Circuits

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics

Two-dimensional semiconductors: recent progress and future perspectives

Two-Dimensional Semiconductor Heterojunctions for Optoelectronics and Electronics

Emergent Elemental Two-Dimensional Materials Beyond Graphene

Novel heterostructures by layering 2D materials

2D Semiconductors for Specific Electronic Applications: from Device to System

First-principles study of two-dimensional van der Waals heterojunctions

Application of Graphene within Optoelectronic Devices and Transistors

Optoelectronics based on 2D TMDs and heterostructures

InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Graphene, hexagonal boron nitride, and their heterostructures: properties and applications