The Graphene–semiconductor Schottky Junction

Xinming Li,Hongwei Zhu

DOI: https://doi.org/10.1063/pt.3.3298

IF: 3.5

2016-01-01

Physics Today

Abstract:When a two-dimensional material abuts a three-dimensional one, a century-old electrical phenomenon finds new applicability.

What problem does this paper attempt to address?

Thin Film Transistors Based on Two Dimensional Graphene and Graphene/semiconductor Heterojunctions

Zhongcheng Zhu,Imran Murtaza,Hong Meng,Wei Huang

DOI: https://doi.org/10.1039/c6ra27674a

IF: 4.036

2017-01-01

RSC Advances

Abstract:During the past few years, two-dimensional (2D) layered materials have emerged as the most fundamental building blocks of a wide variety of optoelectronic devices.
Contacts Between Two- and Three-Dimensional Materials: Ohmic, Schottky, and P-N Heterojunctions.

Yang Xu,Cheng,Sichao Du,Jianyi Yang,Bin Yu,Jack Luo,Wenyan Yin,Erping Li,Shurong Dong,Peide Ye,Xiangfeng Duan

DOI: https://doi.org/10.1021/acsnano.6b01842

IF: 17.1

2016-01-01

ACS Nano

Abstract:After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device performance and circuit design. In this review, we investigate the experimental efforts in interfacing 2D layers with 3D materials and analyze the properties of the heterojunctions formed between them. The contact resistivity of metal on graphene and related 2D materials deserves special attention, while the Schottky junctions formed between metal/2D semiconductor or graphene/3D semiconductor call for careful reconsideration of the physical models describing the junction behavior. The combination of 2D and 3D semiconductors presents a form of p-n junctions that have just marked their debut. For each type of the heterojunctions, the potential applications are reviewed briefly.
Graphene-Semiconductor Contact

M. Javadi

DOI: https://doi.org/10.48550/arXiv.2004.12313

2020-04-26

Applied Physics

Abstract:A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor interface. Quite generally, the Schottky-Mott limit and the sum rule of barrier heights are violated due to the internal potential of graphene. By merging the principal characteristics of semiconductor-semiconductor and metal-semiconductor junctions, the graphene-semiconductor contact may be considered as an archetype of unprecedented \emph{semimetal-semiconductor junction}. Generalized interface equations disclose the coupling of junction characteristics with the density of charge carriers in graphene. It will be shown that the well-known effect of tunable barrier height is directly related to the junction capacitance. Furthermore, the relative impact of image-force effect in the presence of barrier tunability is investigated. Experimental methods to gain built-in potential, barrier height, and capacitance of the junction are discussed in detail. Also the development of strong inversion layer at the interface of graphene-silicon samples is uncovered by analyzing experimental data.
Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

Antonio Di Bartolomeo

DOI: https://doi.org/10.1016/j.physrep.2015.10.003

IF: 30.51

2016-01-01

Physics Reports

Abstract:In the past decade graphene has been one of the most studied materials for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the existing semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.
Electrical Control of the Superconducting-to-Insulating Transition in Graphene/Metal Hybrids

Adrien Allain,Zheng Han,Vincent Bouchiat

DOI: https://doi.org/10.1038/nmat3335

2012-04-10

Abstract:Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of adsorbates, or on multilayered structures. These systems have exhibited novel tunable electronic properties such as bandgap- engineering, reversible metal/insulating transition or supramolecular spintronics. Tunable superconductivity is expected as well, but experimental realization is lacking. Here, we show experiments based on me tal/graphene hybrid composites, enabling the control of proximity coupling of an array of superconducting nanoparticles onto a macroscopic graphene sheet. This material allows at low temperature to tune the superconductivity down to a strongly insulating state. It results from the combination of a proximity-induced superconductivity generated by the metallic nanoparticles array with the two-dimensional and tunable metallicity of graphene. The resulting hybrid material behaves, as a whole, like a granular 2D superconductor showing universal transition threshold and localization of Cooper pairs in the insulating phase. This experiment sheds light on the emergence of superconductivity in inhomogeneous superconduc- tors, and more generally it demonstrates the potential of graphene as a versatile building-block for the realization of novel superconducting materials.

Mesoscale and Nanoscale Physics,Materials Science,Superconductivity
Ideal Graphene/Silicon Schottky Junction Diodes

Dhiraj Sinha,Ji Ung Lee

DOI: https://doi.org/10.1021/nl501735k

2014-05-16

Abstract:The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new transport model is needed to describe the graphene-silicon Schottky junction. While the current-voltage behavior follows the celebrated ideal diode behavior, the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottky junction.

Mesoscale and Nanoscale Physics
Graphene/Semiconductor Heterojunction Solar Cells and Photodetectors

Hongwei Zhu

DOI: https://doi.org/10.1364/ose.2015.rtu4c.2

2015-01-01

Abstract:Graphene-on-semiconductor has been proved to be a quality Schottky junction with high photoelectric conversion. Graphene serves multiple functions as transparent electrode, active junction layer, hole collector and anti-reflection layer in the graphene-on-Si heterojunction solar devices.
Temperature Dependent Characteristics of Graphene/silicon Schottky Junction

Muhammad Abid Anwar,Shurong Dong,Hei Wong

DOI: https://doi.org/10.1504/ijnt.2020.109346

2020-01-01

International Journal of Nanotechnology

Abstract:Graphene/silicon Schottky junction has been reported as a promising device for chemical sensor, biological sensor and photodetector applications. However, abnormal characteristics are often reported and these ambiguities are explained inconsistently in the literature. This work aims at characterising the temperature effects on the current-voltage characteristics so as to explore the physical mechanisms leading to the abnormal behaviours of graphene/silicon Schottky junction. Particular attention is on the effect of silicon surface states which have been studied quite comprehensively in various silicon devices but have not been given enough attention for the graphene/Si structure. Results show that a graphene/Si Schottky junction could have quite different temperature dependences on the barrier height, ideality factor and reverse characteristics as compared with metal/semiconductor contacts. The dangling bonds on silicon surface, isolated by the ultrathin graphene layer, are still electrically active and play an important role in the carrier transport, photonic and chemical sensing capabilities of the graphene/Si junction. Graphene/Si contact prepared by transfer method cannot be a good Schottky junction from the electronic property and stability points of view.
Towards Three-Dimensional Weyl-SurfaceSemimetals in Graphene Networks

Chengyong Zhong,Yuanping Chen,Yuee Xie,Yuanping Chen,Shengyuan A. Yang,Marvin L. Cohen,Shengbai Zhang

DOI: https://doi.org/10.1039/c6nr00882h

2016-01-06

Abstract:Graphene as a two-dimensional (2D) topological Dirac semimetal has attracted much attention for its outstanding properties and potential applications. However, three-dimensional (3D) topological semimetals for carbon materials are still rare. Searching for such materials with salient physics has become a new direction for carbon research. Here, using first-principles calculations and tight-binding modeling, we study three types of 3D graphene networks whose properties inherit those of Dirac electrons in graphene. In the band structures of these materials, two flat Weyl surfaces appear in the Brillouin zone (BZ), which straddle the Fermi level and are robust against external strain. When the networks are cut, the resulting lower-dimensional slabs and nanowires remain to be semimetallic with Weyl line-like and point-like Fermi surfaces, respectively. Between the Weyl lines, flat surface bands emerge with strong magnetism when each surface carbon atom is passivated by one hydrogen atom. The robustness of these structures can be traced back to a bulk topological invariant, ensured by the sublattice symmetry, and to the one-dimensional (1D) Weyl semimetal behavior of the zigzag carbon chain, which has been the common backbone to all these structures. The flat Weyl-surface semimetals may enable applications in correlated electronics, as well as in energy storage, molecular sieve, and catalysis because of their good stability, porous geometry, and large superficial area.

Materials Science
Electrostatic properties and current transport of two-dimensional Schottky barrier diode

Fangbo Xu,Alex Kutana,Yang Yang,Boris I. Yakobson

DOI: https://doi.org/10.48550/arXiv.1704.07370

2017-04-24

Abstract:Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction under the equilibrium condition, based on the input from first-principle calculations. Our calculation also suggests that, at the same forward bias, the current density of a stack of 2D graphene-phosphorene Schottky diodes may be ten thousand times higher than that of a traditional 3D Schottky diode and offer less energy dissipation.

Applied Physics,Mesoscale and Nanoscale Physics,Materials Science
Schottky Junctions: Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units (Adv. Electron. Mater. 5/2018)

Pintu Ghosh,Jinsheng Lu,Ziyao Chen,Hangbo Yang,Min Qiu,Qiang Li

DOI: https://doi.org/10.1002/aelm.201870024

IF: 6.2

2018-01-01

Advanced Electronic Materials

Abstract:In the article number 1700614, Qiang Li and co-workers describe how to improve the wielding of semiconductors to metal nanowires by utilizing the photothermal effect. This plasmon-enhanced nanowielding shows promise for the fabrication of nanoelectronics.
Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

S. Tongay,M. Lemaitre,X. Miao,B. Gila,B. R. Appleton,A. F. Hebard

DOI: https://doi.org/10.1103/PhysRevX.2.011002

2012-03-24

Abstract:Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical vapor deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC and GaN semiconductor substrates, there is a strong van der Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications, such as to sensors where in forward bias there is exponential sensitivity to changes in the Schottky barrier height due to the presence of absorbates on the graphene or to analogue devices for which Schottky barriers are integral components are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures and its demonstrated capability to embrace multiple functionalities.

Materials Science
Study on the Graphene/Silicon Schottky Diodes by Transferring Graphene Transparent Electrodes on Silicon

Xiaojuan Wang,Dong Li,Qichong Zhang,Liping Zou,Fengli Wang,Jun Zhou,Zengxing Zhang

DOI: https://doi.org/10.1016/j.tsf.2015.06.039

IF: 2.1

2015-01-01

Thin Solid Films

Abstract:Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics.
Graphene Diodes: Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics (Adv. Electron. Mater. 7/2021)

Zhenxing Wang,Andreas Hemmetter,Burkay Uzlu,Mohamed Saeed,Ahmed Hamed,Satender Kataria,Renato Negra,Daniel Neumaier,Max C. Lemme

DOI: https://doi.org/10.1002/aelm.202170025

IF: 6.2

2021-01-01

Advanced Electronic Materials

Abstract:In article 2001210, Max C. Lemme and co-workers highlight recent advances in 2D/3D heterostructures with graphene. The article demonstrates the advantages of metal-insulator-graphene diodes and graphene-silicon Schottky diodes for radio frequency circuit applications and photodetection, with outstanding figures-of-merit comparable to or even outperforming the state-of-the-art technology.
Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Dianyu Qi,Peng Li,Haohui Ou,Di Wu,Weiguang Lian,Zhuo Wang,Fangping Ouyang,Yang Chai,Wenjing Zhang

DOI: https://doi.org/10.21203/rs.3.rs-1854850/v1

2022-01-01

Abstract:Abstract Two-dimensional (2D) semiconductors have shown great potentials for ultra-short channel field-effect transistors (FETs) in next-generation electronics. However, because of intractable surface states and interface barriers, it is challenging to realize high-quality contacts with low contact resistances for both p- and n- 2D FETs. Here, we demonstrate a graphene-enhanced van der Waals (vdWs) integration approach, which is a multi-scale (nanometer to centimeter scale) and reliable (~ 100% yield) metal transfer strategy applicable to various metals and 2D semiconductors. Scanning transmission electron microscopy imaging shows that 2D/2D/3D semiconductor/graphene/metal interfaces are atomically flat, ultraclean and defect-free. First principles calculations indicate that the sandwiched graphene monolayer can eliminate gap states induced by 3D metals in 2D semiconductors. Through this approach, we realized Schottky barrier-free contacts on both p- and n-type 2D FETs, achieving p-type MoTe2, p-type black phosphorus and n-type MoS2 FETs with on-state current densities of 404, 1520 and 761 µA µm-1, respectively, which are among the highest values reported in literatures.
Graphene-On-Silicon Schottky Junction Solar Cells

Xinming Li,Hongwei Zhu,Kunlin Wang,Anyuan Cao,Jinquan Wei,Chunyan Li,Yi Jia,Zhen Li,Xiao Li,Dehai Wu

DOI: https://doi.org/10.1002/adma.200904383

IF: 29.4

2010-01-01

Advanced Materials

Abstract:Highly conductive semitransparent graphene sheets are combined with an n-type silicon (n-Si) wafer to fabricate solar cells with power conversion efficiencies up to 1.5% at AM 1.5 and an illumination intensity of 100 mW cm(-2). The Schottky junction solar cells can be extended to other semiconducting materials in which graphene serves multiple functions as active junction layer, charge transport path, and transparent electrode.
Lateral Graphene P-N Junctions Formed by the Graphene/mos₂ Hybrid Interface.

Jie Meng,Huading Song,Cai-Zhen Li,Yibo Jin,Lei Tang,Dameng Liu,Z. Liao,F. Xiu,D. Yu

DOI: https://doi.org/10.1039/c5nr02552d

IF: 6.7

2015-01-01

Nanoscale

Abstract:Graphene/two-dimensional (2D) semiconductor heterostructures have been demonstrated to possess many advantages for electronic and optoelectronic devices. However, there are few reports about the utilization of a 2D semiconductor monolayer to tune the properties of graphene. Here, we report the fabrication and characterization of graphene p-n junctions based on graphene/MoS2 hybrid interfaces. Monolayered graphene across the monolayered MoS2 boundary is divided into n-type regions on the MoS2 and p-type regions on the SiO2 substrate. Such van der Waals heterostructure based graphene p-n junctions show good photoelectric properties. The photocurrent modulation of such devices by a single back gate is also demonstrated for the first time, which shows that the graphene on and off MoS2 regions have different responses to the gate voltage. Our results suggest that the atomic thin hybrid structure can remarkably extend the device applications.
Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Liang Zhang,Yi‐Jia Yan,Han‐Chun Wu,Zhi‐Min Liao,Dapeng Yu

2015-01-01

Abstract:The emergence of graphene-based vertical heterostructures, especially stacked by various layered materials, opens up new promising possibilities for next generation electronic and spintronic devices. While experimental demonstrations of tunneling current tuned by gate voltages are increasing, few attentions are paid to the intrinsic two-dimensional nature of the building blocks in these junctions, which is closely related to available tunneling density of states. Here we show the first attempt to fabricate vertical heterojunction between Bi2Se3 and monolayer graphene. The tunneling-mediated quantum oscillations are identified to arise from several two-dimensional conducting layers. The electrostatic field induced by back gate voltage, as well as the magnetic field, is applied to tailor the density of states near the Fermi surface. We observe large tunneling resistance in high magnetic field, which is attributed to semimetal-quantum Hall insulator transition in graphene.
Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

Hengheng Li,Zhongpo Zhou,Kelei Zhang,Haiying Wang

DOI: https://doi.org/10.1088/1361-6528/ab2d67

IF: 3.5

2019-10-04

Nanotechnology

Abstract:Two-dimensional materials have recently been the focus of extensive research. Graphene-based vertical van der Waals heterostructures are expected to design and fabricate novel electronic and optoelectronic devices. Monolayer gallium telluride is a graphene-like nanosheet synthesized in experiment. Here, the electronic properties of GaTe/graphene heterostructures are investigated under the interlayer coupling and the applied perpendicular electric field. The results show that the electronic properties of GaTe and graphene are preserved, and the energy bandgap of graphene is opened to 13.5 meV in the GaTe/graphene heterostructure. It is found that the n-type Schottky contact is formed in the GaTe/graphene heterostructure, which can be tuned by the interlayer coupling, and the applied electric field. Moreover, a transformation from n-type to p-type Schottky contact is observed when the interlayer distance is smaller than 3.15 Å or the applied electric field is larger than 0.05 V Å-1. These properties are fundamental to the design of new Schottky nanodevices based on the GaTe/graphene heterostructure.
Two-dimensional semiconductors: recent progress and future perspectives

Xiufeng Song,Jinlian Hu,Haibo Zeng

DOI: https://doi.org/10.1039/c3tc00710c

IF: 6.4

2013-01-01

Journal of Materials Chemistry C

Abstract:Graphene with a sp2-honeycomb carbon lattice has drawn a large amount of attention due to its excellent properties and potential applications in many fields. Similar to the structure of graphene, two-dimensional semiconductors are its two-dimensional and isostructural counterparts based on the typical layer-structured semiconductors, such as boron nitride (h-BN) and transition metal dichalcogenides (e.g. MoS2 and WS2), whose layers are bound by weak van der Waals forces. Unlike the semi-metal features of graphene, the two-dimensional semiconductors are natural semiconductors with thicknesses on the atomic scale. When one of the dimensions is extremely reduced, the two-dimensional semiconductors exhibit some unique properties, such as a transition from indirect to direct semiconductor properties, and hence have great potential for applications in electronics, energy storage, sensors, catalysis and composites, which arise both from the dimension-reduced effect and from the modified electronic structure. In this feature article, recent developments in the synthesis, properties and applications of two-dimensional semiconductors are discussed. The reported virtues and novelties of two-dimensional semiconductors are highlighted and the current problems in their developing process are clarified, in addition to their challenges and future prospects.

materials science, multidisciplinary,physics, applied

The Graphene–semiconductor Schottky Junction

Thin Film Transistors Based on Two Dimensional Graphene and Graphene/semiconductor Heterojunctions

Contacts Between Two- and Three-Dimensional Materials: Ohmic, Schottky, and P-N Heterojunctions.

Graphene-Semiconductor Contact

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

Electrical Control of the Superconducting-to-Insulating Transition in Graphene/Metal Hybrids

Ideal Graphene/Silicon Schottky Junction Diodes

Graphene/Semiconductor Heterojunction Solar Cells and Photodetectors

Temperature Dependent Characteristics of Graphene/silicon Schottky Junction

Towards Three-Dimensional Weyl-SurfaceSemimetals in Graphene Networks

Electrostatic properties and current transport of two-dimensional Schottky barrier diode

Schottky Junctions: Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units (Adv. Electron. Mater. 5/2018)

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

Study on the Graphene/Silicon Schottky Diodes by Transferring Graphene Transparent Electrodes on Silicon

Graphene Diodes: Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics (Adv. Electron. Mater. 7/2021)

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Graphene-On-Silicon Schottky Junction Solar Cells

Lateral Graphene P-N Junctions Formed by the Graphene/mos₂ Hybrid Interface.

Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

Two-dimensional semiconductors: recent progress and future perspectives