Abstract:Heterostructures made of stacked 2D materials with different electronic properties are studied for their potential in creating multifunctional devices. Graphene (G) and hexagonal boron nitride (h-BN) van der Waals (vdW) systems have been extensively researched, including recent studies on synthesizing h-BN on graphene/SiC(0001) templates. These studies suggest that h-BN encapsulation could occur in addition to vdW epitaxy. This work presents theoretical research on G/h-BN heterostructures on SiC(0001) with a carbon buffer layer. The results show an energetic preference for h-BN encapsulation below a single layer of graphene: G/h-BN/SiC in bilayer systems and G/h-BN/G/SiC in trilayer systems. Electronic structure calculations reveal that the linear energy band dispersion of graphene is maintained in bilayer systems but with Dirac points at different energy positions due to the varied electron doping level of graphene. In trilayer systems, the doping level of graphene also depends on the stacking order. The electronic band structure of G/h-BN/G/SiC features two Dirac points below the Fermi level but with different energies. Less stable systems like G/G/h-BN/ and h-BN/G/G/SiC display parabolic bands near the Fermi level. Additional structural characterizations were performed based on simulations of C-1s core-level-shift (CLS) and carbon K-edge X-ray absorption near-edge spectroscopy (XANES) to aid future experimental spectroscopy in these graphene/h-BN vdW systems.

Novel heterostructures by layering 2D materials

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Two-dimensional Heterostructures: Fabrication, Characterization, and Application

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

From two-dimensional materials to heterostructures

First Principles on the Structure and Electronic Properties of Vertically Regulated Two-Dimensional Cubic Boron Nitride and Diamond Like Carbon Sandwich Heterostructures

Graphene/h‐BN Heterostructures: Recent Advances in Controllable Preparation and Functional Applications

Creation of a two-dimensional polymer and graphene heterostructure

Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures

Towards Scalable Fabrications and Applications of 2D Layered Material-based Vertical and Lateral Heterostructures

Graphene-based In-Plane Heterostructures for Atomically Thin Electronics

Stacking order effects on the energetic stability and electronic properties of $n$-doped graphene/h-BN van der Waals heterostructures on SiC(0001)

Binary and Ternary Atomic Layers Built from Carbon, Boron, and Nitrogen

Heterostructures produced from nanosheet-based inks

Recent advances in two-dimensional layered and non-layered materials hybrid heterostructures

Revealing Layer-Dependent Interlayer Interactions by Doping Effect on Graphene in WSe2/N-layer Graphene Heterostructures Using Raman and Photoluminescence Spectroscopy

Graphene/h-BN Heterostructure Interconnects

Modelling of stacked 2D materials and devices

Hybrid van der Waals heterojunction based on two-dimensional materials

Manipulating Charge and Energy Transfer Between 2D Atomic Layers Via Heterostructure Engineering

Hexagonal Boron Nitride–Graphene Heterostructures: Synthesis and Interfacial Properties