Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors
Xiaojiao Guo,Honglei Chen,Jihong Bian,Fuyou Liao,Jingyi Ma,Simeng Zhang,Xinzhi Zhang,Junqiang Zhu,Chen Luo,Zijian Zhang,Lingyi Zong,Yin Xia,Chuming Sheng,Zihan Xu,Saifei Gou,Xinyu Wang,Peng Gong,Liwei Liu,Xixi Jiang,Zhenghua An,Chunxiao Cong,Zhijun Qiu,Xing Wu,Peng Zhou,Xinyu Chen,Ling Tong,Wenzhong Bao
DOI: https://doi.org/10.1007/s12274-022-4280-z
IF: 9.9
2022-05-07
Nano Research
Abstract:In comparison to monolayer (1L), multilayer (ML) two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability, higher mobility, and broader spectral response. However, the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films. In this work, we propose a strategy of stacking MoS 2 monolayers via a vacuum transfer method, by which one could obtain wafer-scale high-quality MoS 2 films with the desired number of layers at will. The optical characteristics of these stacked ML-MoS 2 films (> 2L) indicate a weak interlayer coupling. The stacked ML-MoS 2 phototransistors show improved optoelectrical performances and a broader spectral response (approximately 300–1,000 nm) than that of 1L-MoS 2 . Additionally, the dual-gate ML-MoS 2 transistors enable enhanced electrostatic control over the stacked ML-MoS 2 channel, and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology