Stacked 2D materials shed light

Xiaomu Wang,Fengnian Xia

DOI: https://doi.org/10.1038/nmat4218

IF: 41.2

2015-01-01

Nature Materials

Abstract:powerful strategy to leverage and combine the optoelectronic characteristics of different 2D materials is to stack them into vertical van der Waals heterostructures. This approach is now used to realize efficient light-emitting devices.

What problem does this paper attempt to address?

Van der Waals stacked 2D layered materials for optoelectronics

Wenjing Zhang,Qixing Wang,Yu Chen,Zhuo Wang,Andrew T S Wee

DOI: https://doi.org/10.1088/2053-1583/3/2/022001

IF: 6.861

2016-04-13

2D Materials

Abstract:The band gaps of many atomically thin 2D layered materials such as graphene, black phosphorus, monolayer semiconducting transition metal dichalcogenides and hBN range from 0 to 6 eV. These isolated atomic planes can be reassembled into hybrid heterostructures made layer by layer in a precisely chosen sequence. Thus, the electronic properties of 2D materials can be engineered by van der Waals stacking, and the interlayer coupling can be tuned, which opens up avenues for creating new material systems with rich functionalities and novel physical properties. Early studies suggest that van der Waals stacked 2D materials work exceptionally well, dramatically enriching the optoelectronics applications of 2D materials. Here we review recent progress in van der Waals stacked 2D materials, and discuss their potential applications in optoelectronics.

materials science, multidisciplinary
Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Ziheng Ji,Hao Hong,Jin Zhang,Qi Zhang,Wei Huang,Ting Cao,Ruixi Qiao,Can Liu,Jing Liang,Chuanhong Jin,Liying Jiao,Kebin Shi,Sheng Meng,Kaihui Liu

DOI: https://doi.org/10.1021/acsnano.7b04541

IF: 17.1

2017-01-01

ACS Nano

Abstract:Van der Waals-coupled two-dimensional (2D) heterostructures have attracted great attention recently due to their high potential in the next-generation photodetectors and solar cells. The understanding of charge-transfer process between adjacent atomic layers is the key to design optimal devices as it directly determines the fundamental response speed and photon-electron conversion efficiency. However, general belief and theoretical studies have shown that the charge transfer behavior depends sensitively on interlayer configurations, which is difficult to control accurately, bringing great uncertainties in device designing. Here we investigate the ultrafast dynamics of interlayer charge transfer in a prototype heterostructure, the MoS2/WS2 bilayer with various stacking configurations, by optical two-color ultrafast pump-probe spectroscopy. Surprisingly, we found that the charge transfer is robust against varying interlayer twist angles and interlayer coupling strength, in time scale of ∼90 fs. Our observation, together with atomic-resolved transmission electron characterization and time-dependent density functional theory simulations, reveals that the robust ultrafast charge transfer is attributed to the heterogeneous interlayer stretching/sliding, which provides additional channels for efficient charge transfer previously unknown. Our results elucidate the origin of transfer rate robustness against interlayer stacking configurations in optical devices based on 2D heterostructures, facilitating their applications in ultrafast and high-efficient optoelectronic and photovoltaic devices in the near future.
Modelling of stacked 2D materials and devices

Xiaofeng Qian,Yangyang Wang,Wenbin Li,Jing Lu,Ju Li

DOI: https://doi.org/10.1088/2053-1583/2/3/032003

IF: 6.861

2015-08-06

2D Materials

Abstract:Tremendous developments in the synthesis and understanding of two-dimensional materials such as graphene, phosphorene, BN and MoS2 have spurred great interest in exploiting their heterostructures in devices. Here, we present a compact review of the modeling and simulation of stacked two-dimensional materials and devices. Particular emphasis is placed on the intriguing phenomena enabled by different stacking geometries and material choices, and the fundamental physical mechanisms behind them, which enable new device concepts and applications to be developed which would have been difficult to achieve with other material platforms.

materials science, multidisciplinary
Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

Xiaojiao Guo,Honglei Chen,Jihong Bian,Fuyou Liao,Jingyi Ma,Simeng Zhang,Xinzhi Zhang,Junqiang Zhu,Chen Luo,Zijian Zhang,Lingyi Zong,Yin Xia,Chuming Sheng,Zihan Xu,Saifei Gou,Xinyu Wang,Peng Gong,Liwei Liu,Xixi Jiang,Zhenghua An,Chunxiao Cong,Zhijun Qiu,Xing Wu,Peng Zhou,Xinyu Chen,Ling Tong,Wenzhong Bao

DOI: https://doi.org/10.1007/s12274-022-4280-z

IF: 9.9

2022-05-07

Nano Research

Abstract:In comparison to monolayer (1L), multilayer (ML) two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability, higher mobility, and broader spectral response. However, the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films. In this work, we propose a strategy of stacking MoS 2 monolayers via a vacuum transfer method, by which one could obtain wafer-scale high-quality MoS 2 films with the desired number of layers at will. The optical characteristics of these stacked ML-MoS 2 films (> 2L) indicate a weak interlayer coupling. The stacked ML-MoS 2 phototransistors show improved optoelectrical performances and a broader spectral response (approximately 300–1,000 nm) than that of 1L-MoS 2 . Additionally, the dual-gate ML-MoS 2 transistors enable enhanced electrostatic control over the stacked ML-MoS 2 channel, and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures

Jiamin Wang,Fang Cheng,Yan Sun,Hai Xu,Liang Cao

DOI: https://doi.org/10.1039/d3cp04656g

2024-03-06

Abstract:Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
Stacking of Colors in Exfoliable Plasmonic Superlattices.

Mahsa Jalali,Ye Yu,Kaichen Xu,Ray J. H. Ng,Zhaogang Dong,Liancheng Wang,Saman Safari Dinachali,Minghui Hong,Joel K. W. Yang

DOI: https://doi.org/10.1039/c6nr03466g

IF: 6.7

2016-01-01

Nanoscale

Abstract:Color printing with plasmonic resonators can overcome limitations in pigment-based printing approaches. While layering in pigment-based prints results in familiar color mixing effects, the color effects of stacking plasmonic resonator structures have not been investigated. Here, we demonstrate an experimental strategy to fabricate a 3-tiered complex superlattice of nanostructures with multiple sets of building blocks. Laser interference lithography was used to fabricate the nanostructures and a thin-layer of aluminum was deposited to introduce plasmonic colors. Interestingly, the structures exhibited drastic color changes when the layers of structures were sequentially exfoliated. Our theoretical analysis shows that the colors of the superlattice nanostructure were predominantly determined by the plasmonic properties of the two topmost layers. These results suggest the feasibility of the sub-wavelength vertical stacking of multiple plasmonic colors for applications in sensitive tamper-evident seals, dense 3D barcoding, and substrates for plasmonic color laser printing.
Van der Waals contacted MoO x staked ZnO/GaN vertical heterostructured ultraviolet light emitting diodes.

Nallappagari Krishnamurthy Manjunath,Yanghua Lu,Shisheng Lin

DOI: https://doi.org/10.1364/OE.402261

IF: 3.8

2020-01-01

Optics Express

Abstract:Since the discovery of two dimensional (2D) materials, there has been a gold rush for van der Waals integrated 2D material heterostructure based optoelectronic devices. Van der Waals integration involves the physical assembly of the components of the device. In the present work, we extended van der Waals integration from 2D materials to three-dimensional (3D) materials, and herein we uniquely designed a van der Waals contacted light emitting diode based on MoOx staked ZnO/GaN heterostructure. The presence of the MoOx layer between n-type ZnO and p-type GaN leads to the confinement of electrons and an increase in the electron charge density at n-type ZnO. The n-type MoOx, a well-known hole injection layer, favors the availability of holes at the ZnO site, leading to the efficient recombination of electrons and holes at the ZnO site, which results in predominant high-intensity UV-EL emission around 380 nm in both forward and reverse bias. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Excitons and emergent quantum phenomena in stacked 2D semiconductors

Nathan P. Wilson,Wang Yao,Jie Shan,Xiaodong Xu

DOI: https://doi.org/10.1038/s41586-021-03979-1

IF: 64.8

2021-11-17

Nature

Abstract:The design and control of material interfaces is a foundational approach to realize technologically useful effects and engineer material properties. This is especially true for two-dimensional (2D) materials, where van der Waals stacking allows disparate materials to be freely stacked together to form highly customizable interfaces. This has underpinned a recent wave of discoveries based on excitons in stacked double layers of transition metal dichalcogenides (TMDs), the archetypal family of 2D semiconductors. In such double-layer structures, the elegant interplay of charge, spin and moiré superlattice structure with many-body effects gives rise to diverse excitonic phenomena and correlated physics. Here we review some of the recent discoveries that highlight the versatility of TMD double layers to explore quantum optics and many-body effects. We identify outstanding challenges in the field and present a roadmap for unlocking the full potential of excitonic physics in TMD double layers and beyond, such as incorporating newly discovered ferroelectric and magnetic materials to engineer symmetries and add a new level of control to these remarkable engineered materials.

multidisciplinary sciences
Van der Waals heterostructures: Stacked 2D materials shed light.

Xiaomu Wang,Fengnian Xia

DOI: https://doi.org/10.1038/nmat4218

IF: 41.2

2015-01-01

Nature Materials

Abstract:The term heterostructure usually refers to the combination of two or more semiconductor materials with different energy bandgaps. These structures play a pivotal role in modern semiconductor technologies: the band offset at the interfaces of the different materials provides a highly effective means for the manipulation of carriers, leading to revolutionary devices such as double-heterostructure semiconductor lasers operational at room temperature1 and heterostructure bipolar transistors capable of handling ultrahigh-frequency signals2. Generally, the fabrication of heterostructures requires advanced material growth techniques such as molecular beam epitaxy or metal–organic chemical vapour deposition to create clean, abrupt interfaces. In addition, lattice match among different materials in heterostructures is generally required, although accurately controlled strain due to limited lattice mismatch up to a few per cent can sometimes improve the device performance3. Now, writing in Nature Materials, Konstantin Novoselov and colleagues have demonstrated a new type of light-emitting diode (LED) based on heterostructures composed of 2D materials4. In contrast to traditional heterostructures in which different materials are epitaxially grown, 2D layered materials in this structure are stacked mechanically along the direction perpendicular to the 2D plane, and hence these layers are weakly bonded by van der Waals (vdW) forces. A schematic of a typical vdW heterostructure LED is shown in Fig. 1a. Moreover, traditional heterostructures usually consist of semiconductors only. In this work, the authors utilized three different kinds of 2D material: metallic graphene, insulating hexagonal boron nitride (hBN) and semiconducting monolayer transition metal dichalcogenides (TMDCs) with a direct bandgap such as molybdenum disulfide (MoS2). Previously, vdW heterostructures consisting of graphene/thin-film TMDC/graphene were also used for the realization of solar cells5. The band diagram of the LED is shown in Fig. 1b. The hBN layers adjacent to the monolayer MoS2 function as tunnelling barriers. Furthermore, these hBN layers separate the luminescent MoS2 from the metallic graphene to minimize quenching of the light emission. Additional hBN layers above and below the device protect the graphene electrodes without affecting their electrical performance, which is as a result of the atomically smooth surface of hBN and its lack of dangling bonds6. In monolayer semiconducting TMDCs such as MoS2, excitons (bound electron–hole pairs) dominate the emission due to the enhanced Coulomb interaction in these low-dimensional materials compared with bulk materials7. The injected high-energy electrons and holes relax to form excitons, and the recombination of these bound electron–hole pairs leads to light emission (Fig. 1c shows such a vdW LED under bias). The authors have also demonstrated LEDs based on a similar configuration but with multiple monolayer TMDCs, leading to a maximum external light emission efficiency approaching 10%, which is already comparable to the modern LEDs based on organic materials8. Compared with traditional heterostructures grown epitaxially, the 2D vdW heterostructures here do not require the lattice-match condition because of the weak interlayer bonding, and 2D layers with different lattice constants can be stacked together. This allows researchers to leverage a rich family of 2D materials with diverse electronic properties ranging from insulators, semiconductors and metals to superconductors9 to build heterostructures with desirable properties. Moreover, in view of the non-epitaxial fabrication processes and the innate thinness of these 2D vdW heterostructures, they are fully compatible with a wide range of substrates including flexible and transparent ones. In fact, in this work, the authors managed to fabricate vdW LEDs on a thin, transparent and flexible polyester film. Such vdW heterostructures on flexible substrates may find applications in future wearable electronic and optoelectronic devices. At present, the main factor limiting the technological development of such heterostructures is the lack of scalable synthesis strategies. Nevertheless, it is encouraging that large-scale techniques for the growth of simple vdW heterostructures10 and for the mechanical transfer of 2D layers11 have been demonstrated, suggesting that this hurdle might eventually be overcome. Although in this work the vdW heterostructure LEDs based on monolayer semiconducting TMDCs emit at a wavelength from 600 to 700 nm, it is possible to extend the emission wavelength to the telecommunication range (1.3 and 1.55 μm) and possibly to the mid-infrared, using the recently rediscovered black phosphorus12, 13, 14, 15. This emerging 2D material has a widely tunable electronic bandgap from 0.3 to about 2 eV (bulk to monolayer), covering a broad wavelength range. It might also be possible to construct double-heterostructure LEDs by sandwiching the narrow-bandgap black phosphorus between two large-bandgap TMDCs with opposite doping polarity, allowing for the confinement of light and carriers simultaneously1. Given the large variety of available 2D materials and the great flexibility in combining them, these heterostructures may not only compete as light emitters in the visible spectral range as shown by Novoselov and collaborators, but they could also trigger the development of applications in less explored electromagnetic spectral ranges such as in terahertz and mid-infrared. Download references
Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective

Zaheer Ud Din Babar,Ali Raza,Antonio Cassinese,Vincenzo Iannotti

DOI: https://doi.org/10.3390/molecules28052275

IF: 4.6

2023-02-28

Molecules

Abstract:Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.
Van der Waals heterostructures for high-performance device applications: challenges and opportunities

Shi-Jun Liang,Bin Cheng,Xinyi Cui,Feng Miao

DOI: https://doi.org/10.1002/adma.201903800

2019-12-20

Abstract:Discovery of two-dimensional materials with unique electronic, superior optoelectronic or intrinsic magnetic order have triggered worldwide interests among the fields of material science, condensed matter physics and device physics. Vertically stacking of two-dimensional materials with distinct electronic and optical as well as magnetic properties enables to create a large variety of van der Waals heterostructures. The diverse properties of the vertical heterostructures open up unprecedented opportunities for various kinds of device applications, e.g. vertical field effect transistors, ultrasensitive infrared photodetectors, spin-filtering devices and so on, which are inaccessible in the conventional material heterostructures. Here, we review the current status of vertical heterostructures device applications in vertical transistors, infrared photodetectors and spintronic memory/transistors. The relevant challenges for achieving high-performance devices are presented. We also provide outlook on future development of vertical heterostructure devices with integrated electronic and optoelectronic as well as spintronic functinalities.

Applied Physics
2D van der Waals Heterostructures for Emerging Device Applications

Feng Miao

DOI: https://doi.org/10.1109/icsict49897.2020.9278317

2020-01-01

Abstract:Van der Waals (vdW) heterostructures are formed by stacking layers of different 2D materials and offer the possibilities to design new structures with atomic-level precision. In this talk, I will show how these heterostructures provide unprecedented opportunities to realize emerging device applications, especially in the fields of memory, computing and advanced optoelectronics.
Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device

Huihan Li,Xiaolu Xiong,Fei Hui,Dongliang Yang,Jinbao Jiang,Wanxiang Feng,Junfeng Han,Junxi Duan,Zhongrui Wang,Linfeng Sun

DOI: https://doi.org/10.1088/1361-6528/ac5f96

IF: 3.5

2022-03-21

Nanotechnology

Abstract:Abstract Since the first successful exfoliation of graphene, the superior physical and chemical properties of two-dimensional (2D) materials, such as atomic thickness, strong in-plane bonding energy and weak inter-layer van der Waals (vdW) force have attracted wide attention. Meanwhile, there is a surge of interest in novel physics which is absent in bulk materials. Thus, vertical stacking of 2D materials could be critical to discover such physics and develop novel optoelectronic applications. Although vdW heterostructures have been grown by chemical vapor deposition (CVD), the available choices of materials for stacking is limited and the device yield is yet to be improved. Another approach to build vdW heterostructure relies on wet/dry transfer techniques like stacking Lego bricks. Although previous reviews have surveyed various wet transfer techniques, novel dry transfer techniques have been recently been demonstrated, featuring clean and sharp interfaces, which also gets rid of contamination, wrinkles, bubbles formed during wet transfer. This review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces. Such transfer techniques also lead to new physical phenomena while enable novel optoelectronic applications on artificial vdW heterostructures, which are discussed in the last part of this review.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Layer Number and Stacking Engineering of MoS 2 Crystals for High-Performance Polarization-Sensitive Photodetector

Aiqing Fan,Qing Zhang,Zebin Ren,Lin Li,Ziyi Han,Weijie Ma,Xianfeng Shen,Jichen Dong,Xi Yu,Dechao Geng,Wenping Hu

DOI: https://doi.org/10.1021/acsami.4c14501

IF: 9.5

2024-10-19

ACS Applied Materials & Interfaces

Abstract:The layer and stacking engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) gives rise to novel phenomena and multiapplications; thus, TMDs have garnered considerable attention. However, the precisely customized fabrication of stacked 2D materials to date is largely limited to the lack of effective and controllable growth strategies, prone to the unpredictable stacking orders and randomly distributed nucleation sites. Here, we devise an optimized chemical vapor deposition...

materials science, multidisciplinary,nanoscience & nanotechnology
Movable-Type Transfer and Stacking of Van Der Waals Heterostructures for Spintronics.

Yuan Cao,Xinhe Wang,Xiaoyang Lin,Wei Yang,Chen Lv,Yuan Lu,Youguang Zhang,Weisheng Zhao

DOI: https://doi.org/10.1109/access.2020.2984942

IF: 3.9

2020-01-01

IEEE Access

Abstract:The key to achieving high-quality and practical van der Waals heterostructure devices made from various two-dimensional (2D) materials lies in the efficient control over clean and flexible interfaces. Inspired by the “movable-type printing”, one of the four great inventions of ancient China, we demonstrate the “movable-type” transfer and stacking of 2D materials, which utilizes prefabricated polyvinyl alcohol (PVA) film to engineer the interfacial adhesion to 2D materials, and provides a flexible, efficient and batchable transfer scheme for 2D materials. The experiments also verify the “movable-type” transfer can preciously control the position and orientation of 2D materials, which meets the burgeoning requirements such as the preparation of twisted graphene and other heterostructures. Importantly, water-solubility of PVA film ensures an ideal interface of the materials without introducing contamination. We illustrate the superiority of this method with a WSe2 vertical spin valve device, whose performance verifies the applicability and advantages of such a method for spintronics. Our PVA-assisted “movable-type” transfer process may promote the development of high-performance 2D-material-based devices.
Optical Properties and Light-Emission Device Applications of 2-D Layered Semiconductors

Yongzhuo Li,Hao Sun,Lin Gan,Jianxing Zhang,Jiabin Feng,Danyang Zhang,Cun-Zheng Ning

DOI: https://doi.org/10.1109/JPROC.2019.2936424

IF: 20.6

2020-01-01

Proceedings of the IEEE

Abstract:Two-dimensional layered semiconductors have attracted a great deal of attention recently from many fields of science and technology. This article overviews the major progress from the perspective of light-emission properties and related device applications of such 2-D materials. We begin with the overview of basic optical properties, including emission features of various excitonic complexes, many-body effects, light-emission enhancement due to plasmonic coupling, and mechanisms of optical gain. This is followed by discussions of coupling of 2-D materials with an optical cavity, including cavity-enhanced emission due to the Purcell effect, strong and weak coupling, as well as lasing behavior. We then discuss the design and the fabrication of various heterostructures by stacking layers of different 2-D materials for the purpose of confining and injecting charge carriers. Such structures are indispensable for light-emitting devices under electrical injection, the ultimate goal of any semiconductor-based light-emitting diode (LED) or lasers. The progress in electrical injection devices is reviewed next, where LEDs under lateral and vertical electrical injection schemes are discussed. The review is concluded with an outlook and future perspectives.
Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements

jinshui Miao,Yueyue Fang,Yu Jiang,Siyu Long,Yi Dong,Mengyang Kang,Tangxin Li,Jinjin Wang,Xiao Fu,Hui Sun,Hailu Wang

DOI: https://doi.org/10.1088/1361-6463/ad626d

2024-07-13

Journal of Physics D Applied Physics

Abstract:Two-dimensional (2D) layered materials have been actively explored for electronic device applications because of their ability to form van der Waals heterostructures with unique electronic properties. Vertical integration of atomically thin 2D materials can enable the design of a three-dimensional (3D) circuit which is a promising pathway to continuously increase device density. In this study, we vertically stack 2D materials, such as graphene(Gr), MoS 2 , and black phosphorus (BP) to build transistors, heterostructure p-n diodes, and 3D logic circuits. The vertical transistors built from MoS 2 or BP semiconductor exhibit a good on-off ratio of up to 10 3 and a high current density of ~200 Acm -2 at a very small V DS of 50 mV. The Gr/BP/MoS 2 vertical heterostructure p-n diodes show a high gate-tunable rectification ratio of 10 2 . Finally, we have demonstrated a 3D CMOS inverter by vertical integration of Gr, BP (p-channel), Gr, MoS 2 (n-channel), and a 50-nm-thick gold film in sequence. The ability to vertically stack 2D layered materials by van der Waals interactions offers an alternative way to design future 3D integrated circuits.

physics, applied
Stack Growth of Wafer-Scale Van Der Waals Superconductor Heterostructures

Zhenjia Zhou,Fuchen Hou,Xianlei Huang,Gang Wang,Zihao Fu,Weilin Liu,Guowen Yuan,Xiaoxiang Xi,Jie Xu,Junhao Lin,Libo Gao

DOI: https://doi.org/10.1038/s41586-023-06404-x

IF: 64.8

2023-01-01

Nature

Abstract:Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted considerable attention in recent years1-5. The most widely used method of fabrication is to stack mechanically exfoliated micrometre-sized flakes6-18, but this process is not scalable for practical applications. Despite thousands of 2D materials being created, using various stacking combinations1-3,19-21, hardly any large 2D superconductors can be stacked intact into vdW heterostructures, greatly restricting the applications for such devices. Here we report a high-to-low temperature strategy for controllably growing stacks of multiple-layered vdW superconductor heterostructure (vdWSH) films at a wafer scale. The number of layers of 2D superconductors in the vdWSHs can be precisely controlled, and we have successfully grown 27 double-block, 15 triple-block, 5 four-block and 3 five-block vdWSH films (where one block represents one 2D material). Morphological, spectroscopic and atomic-scale structural analyses reveal the presence of parallel, clean and atomically sharp vdW interfaces on a large scale, with very little contamination between neighbouring layers. The intact vdW interfaces allow us to achieve proximity-induced superconductivity and superconducting Josephson junctions on a centimetre scale. Our process for making multiple-layered vdWSHs can easily be generalized to other situations involving 2D materials, potentially accelerating the design of next-generation functional devices and applications22-24. Stacks of van der Waals superconductor heterostructures comprising many layers and several blocks of two-dimensional materials have been grown in a highly controllable manner at a wafer scale using a high-to-low temperature strategy.
Manipulating Charge and Energy Transfer Between 2D Atomic Layers Via Heterostructure Engineering

Xue Liu,Jiajie Pei,Zehua Hu,Weijie Zhao,Sheng Liu,Mohamed-Raouf Amara,Kenji Watanabe,Takashi Taniguchi,Han Zhang,Qihua Xiong

DOI: https://doi.org/10.1021/acs.nanolett.0c01722

IF: 10.8

2020-01-01

Nano Letters

Abstract:Two-dimensional (2D) van der Waals heterostructures have attracted enormous research interests due to their emergent electrical and optical properties. The comprehensive understanding and efficient control of interlayer couplings in such devices are crucial for realizing their functionalities, as well as for improving their performance. Here, we report a successful manipulation of interlayer charge transfer between 2D materials by varying different stacking layers consisting of graphene, hexagonal boron nitride, and tungsten disulfide. Under visible-light excitation, despite being separated by few-layer boron nitride, the graphene and tungsten disulfide exhibit clear modulation of their doping level, i.e., a change of the Fermi level in graphene as large as 120 meV and a net electron accumulation in WS2. By using a combination of micro-Raman and photoluminescence spectroscopy, we demonstrate that the modulation is originated from simultaneous manipulation of charge and/or energy transfer between each of the two adjacent layers.
Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures

Jinbing Cheng,Chunlan Wang,Xuming Zou,Lei Liao

DOI: https://doi.org/10.1002/adom.201800441

IF: 9

2018-08-28

Advanced Optical Materials

Abstract:2D materials, such as graphene, transition metal dichalcogenides, and black phosphorus, have become the most potential semiconductor materials in the field of optoelectronic devices due to their extraordinary properties. Owing to the layer‐dependent and appropriately sized bandgaps, photodetectors based on various 2D materials are designed and manufactured rationally. Utilizing the unique properties of 2D materials, many surprising physical phenomena of junctions based on 2D materials can be obtained after different 2D materials are stacked together. This makes heterojunctions more popular than 2D materials themselves, and the design of 2D materials for human beings is easier than ever. In this review, recent progress in optoelectronic applications based on 2D materials and their heterojunctions is summarized and discussed. Owing to their controllable optoelectronic properties, good mechanical flexibility, strong light–material interaction, and broadband optical response, 2D materials and their heterostructures are attracting increasing attention for photonic applications. The basic properties, syntheses, and working mechanisms of 2D materials used in optoelectronic devices are introduced, and the challenges to achieving practical applications of 2D materials are also discussed.

materials science, multidisciplinary,optics

Stacked 2D materials shed light

Van der Waals stacked 2D layered materials for optoelectronics

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Modelling of stacked 2D materials and devices

Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures

Stacking of Colors in Exfoliable Plasmonic Superlattices.

Van der Waals contacted MoO x staked ZnO/GaN vertical heterostructured ultraviolet light emitting diodes.

Excitons and emergent quantum phenomena in stacked 2D semiconductors

Van der Waals heterostructures: Stacked 2D materials shed light.

Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective

Van der Waals heterostructures for high-performance device applications: challenges and opportunities

2D van der Waals Heterostructures for Emerging Device Applications

Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device

Layer Number and Stacking Engineering of MoS 2 Crystals for High-Performance Polarization-Sensitive Photodetector

Movable-Type Transfer and Stacking of Van Der Waals Heterostructures for Spintronics.

Optical Properties and Light-Emission Device Applications of 2-D Layered Semiconductors

Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements

Stack Growth of Wafer-Scale Van Der Waals Superconductor Heterostructures

Manipulating Charge and Energy Transfer Between 2D Atomic Layers Via Heterostructure Engineering

Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures