Abstract:This work demonstrates a universal strategy for robust growth of high‐quality transition metal dichalcogenide (TMD) vertical heterostructures and a novel design concept for the fabrication of high mobility and high responsivity photodetectors based on 2D TMD vertical heterostructures, which holds promise for the next‐generation photodetectors. Two dimension (2D) transition metal dichalcogenides (TMD) heterostructures have opened unparalleled prospects for next‐generation electronic and optoelectronic applications due to their atomic‐scale thickness and distinct physical properties. The chemical vapor deposition (CVD) method is the most feasible approach to prepare 2D TMD heterostructures. However, the synthesis of 2D vertical heterostructures faces competition between in‐plane and out‐of‐plane growth, which makes it difficult to precisely control the growth of vertical heterostructures. Here, a universal and controllable strategy is reported to grow various 2D TMD vertical heterostructures through an ammonium‐assisted CVD process. The ammonium‐assisted strategy shows excellent controllability and operational simplicity to prevent interlayer diffusion/alloying and thermal decomposition of the existed TMD templates. Ab initio simulations demonstrate that the reaction between NH4Cl and MoS2 leads to the formation of MoS3 clusters, promoting the nucleation and growth of 2D MoS2 on existed 2D WS2 layer, thereby leading to the growth of vertical heterostructure. The resulting 2D WSe2/WS2 vertical heterostructure photodetectors demonstrate an outstanding optoelectronic performance, which are comparable to the performances of photodetectors fabricated from mechanically exfoliated and stacked vertical heterostructures. The ammonium‐assisted strategy for robust growth of high‐quality vertical van der Waals heterostructures will facilitate fundamental physics investigations and device applications in electronics and optoelectronics.

Layer Number and Stacking Engineering of MoS 2 Crystals for High-Performance Polarization-Sensitive Photodetector

Layer Number and Stacking Engineering of MoS2 Crystals for High-Performance Polarization-Sensitive Photodetector

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

Spectroscopic Analysis on Different Stacking Configurations of Multilayered MoSe2

Effect of Layer and Stacking Sequence in Simultaneously Grown 2H and 3R WS2 Atomic Layers

Enhanced Valley Polarization of Bilayer MoSe2 with Variable Stacking Order and Interlayer Coupling

Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Self-Anchored Van-Der-Waals Stacking Growth of Transition-Metal Dichalcogenide Nanoplates

Spontaneous Polarization Induced Photovoltaic Effect In Rhombohedrally Stacked MoS$_2$

Stacking-mode Confined Growth of 2H-Mote2/mos2 Bilayer Heterostructures for UV–vis–IR Photodetectors

Ultra-sensitive nanometric flat pigment for binocular stereoscopic image

Robust Growth of 2D Transition Metal Dichalcogenide Vertical Heterostructures via Ammonium‐Assisted CVD Strategy

Layer-by-Layer Growth of AA-Stacking MoS 2 for Tunable Broadband Phototransistors

Band Alignment Engineering by Twist Angle and Composition Modulation for Heterobilayer

High-Performance Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate

Doping Ability Modulated by Interlayer Coupling in AA' and AB Stacked Bilayer V-WS2 Grown with Chemical Vapor Deposition

High Performance Optoelectronics Based on CVD MoS2