Abstract:Silicon photonics is now widely accepted as a key technology in a variety of systems. But owing to material limitations, now it is challenging to greatly improve the performance after decades of development. Here, we show a high-performance broadband photodetector with significantly enhanced sensitivity and responsivity operating over a wide wavelength range of light from near-ultraviolet to near-infrared at low power consumption. The specially designed textured top ceiling electrode works effectively as an antireflection layer to greatly improve the absorption of near-infrared light, thereby overcoming the absorption limitation of near-infrared light. Instead of the conventional p-n junction and p-intrinsic-n junction, we introduce a similar to 15 nm thick alumina insulator layer between a p-type Si substrate and n-type ZnO nanowire (NW) arrays, which significantly enhances the charge carrier separation and collection efficiency. The photosensing responsivity and sensitivity are found to be nearly 1 order of magnitude higher than that of a reference device of p-Si/n-ZnO NW arrays, significantly higher than the commercial silicon photodiodes as well. The light-induced charge carriers flow across the appropriate thickness of insulator layer via the quantum mechanical Fowler-Nordheim tunneling mechanism. By virtue of the piezo-phototronic effect, the charge density at the interfaces can be tuned to alter the energy bands and the potential barrier distance for tunneling. Additionally, along with the use of incident light of different wavelengths, the influence of the insulator layer on the transport of electrons and holes separately is further investigated. The demonstrated concepts and study would lead to sensitivity improvement, quality enhancement of data transfer, decrease of power consumption, and cost reduction of silicon photonics.

High-speed detection at two micrometres with monolithic silicon photodiodes

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 Μm

Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

High-Speed Carbon Nanotube Photodetectors for 2 μm Communications

High-Speed Carbon Nanotube Photodetectors for 2 Μm Communications.

Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

High-performance Silicon−graphene Hybrid Plasmonic Waveguide Photodetectors Beyond 1.55 Μm

Two-micron wavelength high speed photodiode with InGaAs/GaAsSb type-II multiple quantum wells absorber

High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

High-speed III-V nanowire photodetector monolithically integrated on Si

Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

High-speed polysilicon CMOS photodetector for telecom and datacom

Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures

Graphene/MoS2/Si nanowires Schottky-NP bipolar van der Waals heterojunction for ultrafast photodetectors

High-performance broadband graphene/silicon/graphene photodetectors: From x-ray to near-infrared

Waveguide-integrated self-powered van der Waals heterostructure photodetector with high performance at telecom wavelength