Abstract:A high‐speed near‐infrared (NIR) photodetector (976 nm) seamlessly incorporates multilayer indium selenide (InSe) onto a cutting‐edge silicon nitride (SiN) waveguide. It exhibits exceptional optoelectronic properties, including low dark current (40 nA μm−12), high photoresponsivity (0.38 A W−1), and external quantum efficiency of 48.4%. The NIR photodetector thus opens up boundless possibilities in the realms of optical interconnects, LiDAR technology, and biosensing applications. On‐chip integration of two‐dimensional (2D) materials holds immense potential for novel optoelectronic devices across diverse photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra‐high carrier mobility and outstanding photoresponsivity. Herein, a high‐speed photodetector based on a multilayer 90 nm thick InSe integrated on a silicon nitride (SiN) waveguide is reported. The device exhibits a remarkable low dark current density of ≈40 nA μm−2, a photoresponsivity of 0.38 A W−1, and an external quantum efficiency of ≈48.4%. Tested under ambient conditions at near‐infrared 976 nm wavelength, it exhibits an absorption coefficient of 0.11 dB μm−1. Additionally, the photodetector demonstrates a 3‐dB radiofrequency bandwidth of 85 MHz and an open‐eye diagram at data transmission of 1 Gbit s−1. Based on these exceptional optoelectronic advantages, integrated multilayer InSe enables the realization of active photonic devices for a range of applications, such as short‐reach optical interconnects, LiDAR imaging, and biosensing.

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