Abstract:With the development of infrared optoelectronic technology, high responsivity, ultra-low dark current, and high response speed have become important factors of the next generation of infrared photodiodes. However, the minimum thickness of the absorber layer is limited to approximately one or several wavelength lengths to acquire high quantum efficiency, which results in a long transit time of photogenerated carriers. In this work, we propose a photon-trapping structure that uses the skin effect of metals to generate horizontal local modes to enhance the absorption of infrared photodiodes. The photon-trapping structure consists of an artificial grating structure covered by a metallic film. Importantly, we develop a simplified theoretical model to describe the local mode, which is then being used to design the realistic photon-trapping structure presented in this work. This design method is universal and we discuss the optical properties of the photon-trapping structure in InAs, InSb, InAs/GaSb type-II superlattices, InAs/InAsSb type-II superlattices, and HgCdTe infrared photodiodes. Both absorption of optical properties and responsivity of optoelectrical properties are numerically investigated in a systematic way. The optical simulations indicate that the absorption of the HgCdTe infrared photodiodes exceeds 80% at 8.5 ∼ 11 µm with a maximum value of 95% at 9.73 µm. The optoelectrical simulations show that the responsivity at 7 ∼ 10 µm is significantly enhanced compared to that of the plain HgCdTe infrared photodiodes without the photon-trapping structure. We further investigate the optical crosstalk in the HgCdTe pixel array employing the photon-trapping structure. The optical crosstalk significantly reduces as the pixel spacing increases. Our work provides a design method for developing small pixel, large scale, and low dark current focal plane array infrared photodiodes.

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