Abstract:Development of cost-effective and power-efficient optical interconnects is required to meet high demand of data transfer in the era of Internet of Things (IoT) that is expected to connect billions of sensors with different functionalities. The cost of optical links must be reduced for a wide adoption of optical interconnects in the fast data transmission systems. Monolithic integration of ultra-fast photodetectors (PDs), one of the major components of optical receivers-with CMOS/BiCMOS circuits, can reduce the cost dramatically. However, expensive material systems and non-CMOS-compatible processing utilized in the current high-speed photodetectors do not promise a monolithic integration to the required circuitry in the near future. On the other hand, high speed PDs with CMOS-compatible material systems such as silicon (Si), germanium (Ge) or SiGe alloys have poor responsivity for the wavelengths of interest at data rates 10 Gb/s or higher. Our solution to this problem is to increase the optical absorption properties of the semiconductor by introducing micro-/nanoscale air holes to the material. Such micro/nanoholes support an ensemble of modes that propagate laterally inside in a very thin layer of semiconductor (<2µm) which is required for high speed operations. The recent demonstration of surface-illuminated high-speed (>25Gb/s) and high efficiency (>50%) Si PDs with integrated micro-/nanoholes proved that light bending can enable ultra-fast Si-based PDs for monolithic integration with CMOS/BiCMOS circuits to realize cost-effective all-Si optical receivers. In this talk, a review of state-of-the art ultra-fast Si PDs for short-reach data communication will be presented and high speed and high efficiency PDs with alternative Si-based material systems will be demonstrated for the applications in long-reach optical links. Future opportunities that light-bending phenomenon can offer in high performance PD design for various applications such as single photon detection, LIDAR and high-performance computing will be discussed.

High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

High-performance Ge Photodetectors on Silicon Photonics Platform for Optical Interconnect

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Silicon Photonic Network-on-chip and Enabling Components

Toward all-silicon optical receivers: photon trapping and manipulation using nanostructures (Conference Presentation)

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 Μm

Recent Progress in III–V Photodetectors Grown on Silicon

High-speed polysilicon CMOS photodetector for telecom and datacom

Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling

Mid-infrared Integrated Photonics on Silicon: a Perspective

High-speed GeSn Resonance Cavity Enhanced Photodetectors for a 50 Gbps Si-based 2 Μm Band Communication System

Silicon photonics for high-speed communications and photonic signal processing

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

High speed GeSn resonance cavity enhanced photodetectors for 50 Gbps Si-based 2 μm band communication system

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Monolithically Integrated Waveguide-Coupled Single-Photon Avalanche Photodetector in a Visible-Light Silicon Photonics Platform

Silicon photonics for high-capacity data communications

100 Gbps PAM4 ultra-thin photodetectors integrated on SOI platform by micro transfer printing