Stress Isolation Suspension for Silicon-on-Insulator 3-Axis Accelerometer Designed by Topology Optimization Method

Motohiro Fujiyoshi,Atsushi Kawamoto,Shoji Hashimoto,Yoshiteru Omura,Hirofumi Funabashi,Yoshie Ohira,Yoshiyuki Hata,Takashi Ozaki,Teruhisa Akashi,Yutaka Nonomura,Takahiro Nakayama,Hitoshi Yamada
DOI: https://doi.org/10.1109/jsen.2022.3141805
IF: 4.3
2022-03-01
IEEE Sensors Journal
Abstract:Accurate multi-axis inertial sensing is required for self-positioning estimation in automatic driving and robot posture control. In particular, a small bias drift is an important requirement for these applications. The bias drift is primarily caused by the external stress from the package. To reduce the bias drift in micro electro-mechanical systems (MEMS) sensors, a stress isolation suspension (SIS) structure inside the sensor chip is considered promising for miniaturization and cost reduction. To easily design an effective SIS, we propose a new design procedure based on the topology optimization method (TOM). The number of elements for the TOM in MEMS devices is often large owing to narrow lines and gaps such as release holes and comb-shaped electrodes, which increasing the computational cost of a TOM using an iterative algorithm. Before the TOM iterative calculation, we first identify the dominant external force mode affecting the bias drift using a single finite element analysis (FEA) with precise detailed geometry. Based on this, the TOM model is simplified. This combination of FEA and TOM allows a bias-reducing topology-optimized SIS (T-SIS) structure to be designed with reduced computational cost. For validation, we applied the T-SIS design procedure to a capacitive accelerometer for z-axis bias drift reduction and compared its performance to accelerometers without T-SIS. The experimental results indicate that the T-SIS reduces the z-axis bias drift from ±811 mG to ±9.9 mG (temperature range: −30 °C to +70 °C), which is 1/80 of the bias drift of the sensor without T-SIS.
engineering, electrical & electronic,instruments & instrumentation,physics, applied
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