Abstract:This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.

Fabrication of curved mirrors for visible semiconductor lasers using electron-beam lithography and chemically assisted ion-beam etching

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

The Fabrication Of Gan-Based Optical Cavity Mirrors By Focused Ion Beam Milling

Fabrication Of Compact Turning Mirrors In Silicon-On-Insulator Materials

Fabrication of mirror templates in silica with micron-sized radii of curvature

Fabrication of Ridge Waveguide of 808 Nm GaAs-based Laser Diodes by Wet Chemical Etching

Design of Synthesized DBRs for Long-Wavelength InP-Based Vertical-Cavity Surface-Emitting Lasers

Compact Integrated Waveguide Turning Mirror in SOI

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Mirror-Integrated Arrayed-Waveguide Grating On Silicon-On-Insulator

Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)

Spatial-mode control of vertical-cavity lasers with micromirrors fabricated and replicated in semiconductor materials

Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator

Effects of Ga+ milling on InGaAsP Quantum Well Laser with mirrors etched by Focused Ion Beam

Development of high‐reflectivity and antireflection dielectric multilayer mirrors for AlGaN‐based ultraviolet‐B laser diodes and their device applications

(In,Ga)N/Gan Microcavities With Double Dielectric Mirrors Fabricated By Selective Removal Of An (Al,In)N Sacrificial Layer

Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasers

Design and Realization of a 1.55-/Spl Mu/m Patterned Vertical Cavity Surface Emitting Laser with Lattice-Mismatched Mirror Layers

Diamond Mirrors for High-Power Lasers

Fabrication of AlGaN‐based ultraviolet‐B laser diodes using a substrate exfoliation method with water