Room temperature deposited silver oxide films by dc magnetron sputtering with high sputtering power: effect of deposition time on microstructure, electrical and optical properties

Xiaoyong Gao,Binqi Li,Shuaiyang Liu
DOI: https://doi.org/10.1088/1402-4896/ac4cff
2022-01-31
Physica Scripta
Abstract:Abstract A series of non-stoichiometric p-type silver oxide (Ag x O) films are room temperature deposited on glass substrates at different deposition time (t d ) by dc magnetron sputtering with high sputtering power. The evolution in component and the change in electrical and optical properties of the films with t d are studied by XRD, SEM, EDS, visible-infrared spectroscopy and Hall data. The p-type conduction of cubic AgO and Ag 2 O phases is also proposed in mechanism. The evolution in component from AgO to almost Ag 2 O and the change in microstructure with t d are caused by the thermal decomposition of AgO phase induced by high sputtering power. The film’s absorption edge firstly redshifts from 2.8 to 2.3 eV with increase of t d from 2 min to 15 min, and then is suddenly reduced to 1.25 eV of cubic phase Ag 2 O at 20 min t d . The phases AgO and Ag 2 O both have p-type conduction characteristics, mainly due to the Ag vacancies and O vacancies, respectively. The free carrier concentration and the resistivity of the films are both increased and reduced with increase of t d . The Ag x O film with 15 min t d is the highest in p-type conduction ability due to the highest free carrier concentration and mobility, and thus is capable of being the candidate of hole-transporting layer materials of perovskite solar cells.
physics, multidisciplinary
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