Abstract:Multilayer black phosphorus (BP) has been widely used in many infrared applications due to its narrow bandgap below 3.7-μm wavelength range. Approaches that reduce the bandgap to less than 0.33 eV would extend the cutoff wavelength and are of paramount importance. Moreover, the poor air stability of BP severely limits its practical applications. However, none of the current methods ensure effective bandgap tuning while enhancing air stability of BP for long-term device operation. This paper solved both problems by substituting BP with congener arsenic (As) atoms. We achieved millimeter-sized As-substituted BP (b-As x P 1− x ) by optimizing the chemical vapor transport parameters, with As concentrations ( x ) varying as 0, 0.3, 0.4, 0.5, and 0.6. According to the scanning tunneling microscopy results, arsenic atoms are resolved to be randomly embedded in the phosphorus host lattice, while maintaining a well-ordered lattice arrangement. Therefore, the electrical bandgap of pristine BP is narrowed to ∼0.16 ± 0.02 eV for the b-As 0.6 P 0.4 sample, accompanied by the accumulated p-doping and red-shifting BP Raman feature. Furthermore, the device based on b-As 0.6 P 0.4 exhibits no signs of oxidation under ambient conditions (temperature ∼20°C; humidity ∼33%) for 48 h and shows a photoresponsivity of up to ∼882 mA W −1 , exceeding the values of ∼314 mA W −1 for pristine BP devices due to the strong doping without obvious lattice distortion. Our findings indicate that arsenic-substituted BP has potential application in developing ambient-stable photodetectors and optical modulators.

Rectifying and negative differential resistance in nonmetal-adsorbed black arsenic phosphorus

The electromagnetic performance of transition metal-substituted monolayer black arsenic-phosphorus

Electrically tunable optical properties of few layers black arsenic phosphorus.

Electrically tunable optical properties of few-layer black arsenic phosphorus

Interfacial Electrical Properties and Transport Properties of Monolayer Black AsP Alloy in Contact with Metal

Negative Transconductance and Negative Differential Resistance in Asymmetric Narrow Bandgap 2D-3D Heterostructures

The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study.

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Tuning structural, electronic, and magnetic properties of black-AsP monolayer by adatom adsorptions: A first principles study

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

Demonstration of giant anisotropic magnetoresistance, high spin filtering efficiency, and negative differential resistance in nanodevices based on oxygen doped black arsenic phosphorus nanoribbons

Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

Intralayer Negative Poisson's Ratio in Two-Dimensional Black Arsenic by Strain Engineering

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

Electronic properties of Janus black arsenic-phosphorus (b-AsP) nanoribbons under transverse electric field

2D Layered Black Arsenic-Phosphorus Materials: Synthesis, Properties, and Device Applications

Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic

Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector

Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field

From highly oriented bulk black arsenic phosphorus to well-crystallized exfoliated flakes with enhanced anti-oxidation: precise control upon chemical vapor transport