Solution-processed silicon/SnCl2-treated Ti3C2Tx MXene Schottky junction solar cells

Xincheng Yao,Lujie Yin,Yanzhou Wang,Weining Liu,Caidong Xie,Qiming Liu,Yujun Fu,Yali Li,Junshuai Li,Deyan He
DOI: https://doi.org/10.1007/s40843-021-1829-3
2021-10-29
Science China Materials
Abstract:In this study, a novel photovoltaic cell based on the Ti3C2Tx MXene/n-type silicon (n-Si) Schottky junction is developed by a simple solution-processed method of drop-casting the Ti3C2Tx MXene ethanol suspension onto the surface of n-Si wafers and the subsequent natural drying in air. The demonstration device with a simple configuration of Ag (top electrode)/Ti3C2Tx/n-Si/In:Ga (back electrode) delivers a power conversion efficiency (PCE) of 5.70% with a short-circuit current density (Jsc) of 20.68 mA cm−2, open-circuit voltage (Voc) of 0.530 V and fill factor (FF) of 52.0% under AM 1.5G illumination. After treating the MXene layer with the SnCl2 aqueous solution, an improved PCE to 6.95% (Jsc: 23.04 mA cm−2; Voc: 0.536 V; FF: 56.2%) can be achieved because of the reduced light reflection, improved quality of junction and electrical contact, as well as the increased carrier lifetime/suppressed carrier recombination. Given the simple device configuration, facile preparation and huge potential for performance improvement, this work is believed to provide valuable exploration of developing novel solar cells.
materials science, multidisciplinary
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