Abstract:In this contribution, the structural, electronic, and optical properties of Ge/AlN heterostructure (HTS) using DFT calculations have been systematically investigated. The binding energies suggest it falling into the range of van der Waals (vdW) HTS. The changing interlayer distances are employed to obtain the modulated band gaps of 3-141 meV, confirming the interface engineering an efficient means to present significant semiconductor properties of the two-dimensional (2D) devices. The results further demonstrate that both the external electric field (E-field) and in-plane strain can efficiently tune the band gaps of the Ge/AlN HTS. The charge transfer at the interface region causes a built-in electric field (E-int), contributing to the efficient separation of the photoexcited electron-hole pairs and enhancing the carrier mobility in the systems. More interestingly, the presence of the linear evolution of the band gap under electric field indicates its application prospective in pressure sensors. Besides, a semiconductor-to-metal transition is observed for the Ge/AlN HTS through the application of an external E-field, which implies its wide potential application in nano-electronic and semiconductor devices. Relatively enhanced optical absorption is presented for the Ge/AlN HTS, respectively, in the visible range than isolated AlN monolayer, and in the ultraviolet light zone than Ge monolayer. These results predict enormous significance for the Ge/AlN HTS in the field of energy conversion and functional devices.

Sub-bandgap light absorption enhancement in germanium films through Berreman mode weak coupling to a microcavity mode

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

Tunable Berreman Mode in Highly Conductive Organic Thin Films.

Direct-bandgap light-emitting germanium in tensilely strained nanomembranes

Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

Study on epsilon crossover wavelength tuning of heavily doped germanium-on-silicon in mid-infrared range

Berreman type perfect absorber based on epsilon near zero material gallium doped zinc oxide

Broadband Absorptance Enhancement of Silicon Nanowire Arrays with Germanium As the Substrate

Enhanced and Suppressed Infrared Transmission Through Germanium Subwavelength Arrays

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Efficient Band Gap Engineering and Enhanced Optical Absorption of Vertical Germanene/ h ‐AlN Bilayer Heterostructure: Potential New Electronics and Optoelectronics

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Optical Absorbers: Nanocavity Enhancement for Ultra‐Thin Film Optical Absorber (adv. Mater. 17/2014)

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

Nanocavity Enhancement for Ultra-Thin Film Optical Absorber.

Direct-Bandgap Germanium Active Layers Pumped above Transparency Based on Tensilely Strained Nanomembranes

Direct bandgap emission from strain-doped germanium

Thin Germanium Waveguide-Array-Like Absorber Based on Localized Resonance