The nature of radiation damage in diamond: activation of oxygen donors

Johan F. Prins

DOI: https://doi.org/10.1016/s0925-9635(00)00201-6

IF: 3.806

2000-04-01

Diamond and Related Materials

Abstract:Radiation damage, caused by ion implantation into diamond, has been modelled by assuming that an impinging ion leaves in its wake a trail of damaged spheres consisting of conducting graphite-like material [S. Prawer, R. Kalish, Phys. Rev. B 51 (1995) 15711]. The graphitization threshold is reached when the spheres overlap. This postulate is based on a model by Morehead and Crowder [F.F. Morehead Jr., B.L. Crowder, Radiat. Eff. 6 (1970) 27], who assumed that each ion injected into silicon creates amorphous regions around its track. Experimental results on silicon have since shown that amorphous regions nucleate only after a critical ion dose has been exceeded. Since diamond is more radiation hard than silicon, the probability that graphite-like spheres will form is thus remote. In both silicon and diamond, the creation and accumulation of radiation damage during ion implantation can be explained by assuming that the primary radiation products in the collision cascades are individual vacancies and displaced atoms. In diamond, at low temperatures (liquid nitrogen) and moderate ion doses, these point defects become effectively ‘frozen’ into the positions in which they are created. Metastable defect structures are thus possible. By considering vacancy–interstitial interactions in diamond, it is argued that shallow donor states can be generated by ‘quenching in’ suitable atoms after ion implantation. Experimental results using oxygen-ion implantation followed by suitable annealing confirm that oxygen may be activated in this way to form donor states. These states are situated at ≈0.32eV below the conduction band.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films