Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

Carbon nanotube transistors scaled to a 40-nanometer footprint

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Carbon nanotube-based CMOS transistors and integrated circuits

Nanotube and Nanowire Transistors

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Scaling aligned carbon nanotube transistors to a sub-10 nm node

Carbon nanotube digital electronics

Miniature Organic Transistors With Carbon Nanotubes as Quasi-One Dimensional Electrodes

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Wafer Scale Fabrication Of Carbon Nanotube Thin Film Transistors With High Yield

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

High-frequency Performance of Scaled Carbon Nanotube Array Field-Effect Transistors

Scaling carbon nanotube CMOS FETs towards quantum limit

Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability

Three-dimensional Architecture of Carbon Nanotube Transistors with High Speed and Performance