Abstract:Abstract Transistors on aligned semiconducting carbon nanotubes (A-CNTs) have been considered a promising substitute for mainstream Si transistors to extend integrated circuit (IC) technology owing to their potential advantages of easy miniaturization and high energy efficiency, but whether A-CNT FETs can be scalably fabricated with ultrascaled whole dimensions while maintaining high performance remains questionable. Here, we explore the whole size scaling down potential of A-CNT transistors and demonstrate the possibility of implementing such small-geometry transistors in ultra-large-scale ICs that consist of billions of transistors. A-CNT transistors with a contacted gate pitch (CGP) of 175 nm have been achieved by simultaneously scaling the gate length and the contact length, and exhibit an on-current of 2.24 mA/μm and a peak transconductance of 1.64 mS/μm, surpassing silicon 45 nm node transistors in terms of both size and electronic performance. A static random-access memory (SRAM) cell has been built using six A-CNT transistors in an area of 0.967 μm2, which is comparable to the commercial silicon 90 nm technology node and is the smallest SRAM cell based on non-Si semiconductors. Furthermore, a full-contact structure is introduced between the metal and A-CNTs to achieve a contact resistance as low as 90 Ω·μm and to reduce the dependence on the contact length. A-CNT transistors downsized to a CGP of 55 nm (corresponding to the silicon 10 nm technology node) have been demonstrated to outperform 10 nm Si MOS transistors in terms of carrier mobility and Fermi velocity, indicating the tremendous potential of A-CNT transistors in high-performance digital ICs of sub 10 nm nodes.

Scaling aligned carbon nanotube transistors to a sub-10 nm node

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Carbon nanotube transistors scaled to a 40-nanometer footprint

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes

Scaling carbon nanotube CMOS FETs towards quantum limit

Carbon Nanotube SRAM in 5-Nm Technology Node Design, Optimization, and Performance Evaluation—Part I: CNFET Transistor Optimization

Nanotube and Nanowire Transistors

Precise pitch-scaling of carbon nanotube arrays within three-dimensional DNA nanotrenches

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Carbon nanotube-based CMOS transistors and integrated circuits

Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability