Abstract:In this work, we investigate the silicon nitridation process using a N 2 plasma Glow Discharge Source (GDS) in an ultra-high vacuum chamber. In situ Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS) measurements were performed to determine various chemical environments of the surface species. The main goals of this study are determination of the film chemical composition, to estimate its thickness and identify various phenomena taking place during the nitridation process under different experimental conditions. To achieve these objectives, we developed an ARXPS intensity model for an ultrathin SiN x overlayer. Based on the ARXPS results, which indicate that the silicon nitride film is not homogenous, we adopted a bi-layer model composed of two Si x N y O z layers with varying thickness and chemical composition. The model is built from analysis of photoelectron intensities, considering a comparison between experimental and theoretical data. This bi-layer model revealed that the silicon nitride layer consists of a surface layer composed of approximately equal amounts of silicon and nitrogen (50% each), and an interfacial layer containing varying amounts of oxygen depending on experimental parameters. The presence of oxygen is due to residual air contamination in the vacuum chamber and/or to Si native oxide. The estimated thickness of silicon nitride film is less than 9 nm, depending on the nitridation time and temperature. The model developed in this work enabled us to study the effects of initial surface state (as received or chemically cleaned), Si substrate crystallographic orientation (such as (100) and (111)), and the nitridation temperature (room temperature and 500°C). The diffusing species (N + , N 2 + , O + ), which play a crucial role during nitridation, were found to be influenced by temperature, treatment time, and substrate orientation. The diffusion phenomenon competed with other processes such as NO desorption, leading to a significant impact on formation of the SiN x film. Furthermore, we compared the thickness obtained from the ARXPS model using cross-sectional High-Resolution Transmission Electron Microscopy (HR-TEM) images. Additional Low-Energy Electron Diffraction (LEED) measurements indicated that the SiN x film was amorphous.

Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition

Multi-model Simulation of 300 Mm Silicon-Nitride Thin-Film Deposition by PECVD and Experimental Verification

Angle-Resolved X-ray Photoelectron Spectroscopy intensity modeling of SiN x ultrathin layer grown on Si (100) and Si (111) substrates by N 2 plasma treatment

High Accuracy Simulation of Silicon Oxynitride Film Grown by Plasma Enhanced Chemical Vapor Deposition

Effect of reactive gases (NH3/N2) on silicon–nitride thin films deposited with diiodosilane (SiH2I2) precursors

Feasibility of molecular dynamics simulation for process parameter guidance of silicon nitride thin films by PECVD

Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursor

Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Parametric Study and Residual Gas Analysis of Large-Area Silicon-Nitride Thin-Film Deposition by Plasma-Enhanced Chemical Vapor Deposition

Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasma

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Monte Carlo simulation and measurement of silicon reactive ion etching profiles

Processing and Characterisation of PECVD Silicon Nitride Films

Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

The growth mechanism of 〈1010〉 oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process

Molecular dynamics simulations of silicon nitride atomic layer etching with Ar, Kr, and Xe ion irradiations

Modeling of Gas Phase and Surface Reactions in an Aluminum Nitride Growth System

Modeling the impact of incomplete conformality during atomic layer processing

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture