Abstract:Ultrafast pulsed laser for wafer processing has been promising in the semiconductor industry due to its high precision and low thermal effect. The microstructure and defect during the stealth dicing process is critical to controlling the desired quality of the wafer. The structural evolution and defect formation mechanisms during stealth dicing of 4H-SiC with femtosecond and picosecond lasers were investigated. In order to understand the ultrafast pulsed laser interaction with 4H-SiC wafer, we studied the laser intensity dependence of the nonlinear refractive index, the propagation of laser beam focusing in 4H-SiC, the laser absorption, electron concentration evolution and energy deposition. The effect of two significant processing factors was discussed, including laser fluence and laser scribing times. The propagation paths and energy deposition of femtosecond and picosecond lasers in the internal processing of 4H-SiC were calculated by finite element method. The evolution of electrons temperature, lattice temperature and free electron concentration in the material during laser processing was analyzed. Femtosecond laser stealth dicing had higher processing accuracy due to minimal thermal effects. The defect induced by femtosecond laser was dominated by nanovoids and micro-cracks. The defect structure was affected by laser processing parameters such as scanning passes and laser power density. Multi-focusing of ultrafast pulsed lasers in transparent materials was generally considered to be a dynamic balance of nonlinear self-focusing and plasma defocusing. Picosecond laser processing resulted a higher processing efficiency under the same laser energy density comparing with femtosecond laser processing. However, defects during picosecond laser dicing were dominated by thermal ablation, which impaired the processing accuracy.

Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam

Study of Femtosecond Laser Ablation Effect on Micro-Processing for 4H-SiC Substrate

Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Experimental study on femtosecond laser ablation of 4H-SiC substrate

Investigation on sapphire ablation by femtosecond-nanosecond dual beam laser

Single-crystal silicon ablation with temporally delayed femtosecond laser double-pulse trains

Effects of Parameters in Femtosecond Laser Micromachining on Ablation of Silicon

Energy Transfer Between Femtosecond Laser and Silicon Carbide

The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

Multi-Physics Coupling Simulation of Picosecond Pulsed Laser Ablation of Single-Crystal Silicon

Investigations on the ablation behavior of C/SiC under femtosecond laser

Effect of beam profile on nanosecond laser drilling of 4H-SIC

Femtosecond pulsed laser-induced ablation region development on the Surface of silicon

Ultrafast pulsed laser stealth dicing of 4H-SiC wafer: Structure evolution and defect generation

Experimental Study on Femtosecond Laser Processing Performance of Single-Crystal Silicon Carbide

Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon

Efficiency of silicon micromachining by femtosecond laser pulses in ambient air

4H-SiC wafer slicing by using femtosecond laser double-pulses

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process