Abstract:The optimization of microelectronic devices and Microelectromechanical Systems (MEMS) technology depends on the knowledge of the mechanical and thermophysical properties of the thin film materials used to fabricate them. The thickness, stoichiometry, structure and thermal history can affect the properties of thin films causing their mechanical and thermophysical properties to diverge from bulk values. Moreover, it is known that the mechanical and thermophysical properties of thin films vary considerably at different temperatures. Bulk properties of semiconductors have been characterized over a wide range of temperatures; however there is limited information on thin film properties of silicon-based compounds such as silicon nitride, specially at high temperatures. In our work, MEMS devices designed to record the localized maximum temperature during high temperature thermal processes, which we call Breaking T-MEMS, will be presented as a way to determine some of the mechanical properties (Young's modulus and fracture strength) and thermophysical properties (coefficient of thermal expansion) of silicon-rich nitride thin films at high temperatures. The Breaking T-MEMS device consists of a thin film bridge suspended over a substrate. During testing, the devices are thermally loaded in tension by heating the sample. The low coefficient of thermal expansion of the film relative to that of the substrate causes the thin film bridge to break at a specific temperature. Through a combination of indirect experimental measurements, analytical expressions, numerical and statistical analysis, and if the experiments are conducted using at least two different substrates of known temperaturedependent coefficients of thermal expansion, some of the material properties of the film can be calculated from the breaking temperatures of various devices. The two candidate materials for the substrate are silicon and aluminum oxide (sapphire).

Coefficient of thermal expansion and biaxial Young's modulus in Si-rich silicon nitride thin films

Properties of "stoichiometric" Silicon Oxynitride Films

Effects of Atomic Ratio on the Mechanical Properties of Amorphous Silicon Carbon Nitride

Compressibility And Thermal Expansion Of Cubic Silicon Nitride

Tensile mechanical behaviors of cubic silicon carbide thin films

Effect of Different Oxide Thickness on the Bending Young'S Modulus of Sio2@Sic Nanowires

Microstructural and Mechanical Properties of Cubic Silicon Nitride: Insights from Molecular Dynamics Simulation

The effect of the α phase on the elastic properties of Si3N4

Thermal and Mechanical Properties of Amorphous Silicon Carbide Thin Films Using the Femtosecond Pump-Probe Technique

Yield Strength of Α‐silicon Nitride at High Pressure and High Temperature

Lattice constant and coefficient of linear thermal expansion of the silicon crystal. Influence of isotopic composition

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Thermal expansion coefficient of single crystal silicon from 7 K to 293 K

Mechanical Properties of Silicon Carbonitride Thin Films

Study of the Bending Modulus of Individual Silicon Nitride Nanobelts Via Atomic Force Microscopy

Mechanical strength of nitrogen-doped silicon single crystal investigated by three-point bending method

Microstructures and Optical Properties of SiNx Films

Young's Modulus Characterization of Nano-Level Silicon Nanomembrane

Modelling of Si-B-N ceramics

Mechanical and Thermophysical Properties of Silicon Nitride Thin Films at High Temperatures Using In-Situ Mems Temperature Sensors

Dual ion beam grown silicon carbide thin films: Variation of refractive index and bandgap with film thickness