Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers

Yao Wang,Chengcheng Xiao,Miaogen Chen,Chenqiang Hua,Junding Zou,Chen Wu,Jianzhong Jiang,Shengyuan A. Yang,Yunhao Lu,Wei Ji

DOI: https://doi.org/10.1039/c8mh00082d

IF: 13.3

2018-01-01

Materials Horizons

Abstract:Robust elemental ferroelectricity and switchable spin-textures in air-stable Te multilayers.

materials science, multidisciplinary,chemistry

What problem does this paper attempt to address?

Theoretical Design of Mono-Elemental Ferroelectricity with Tunable Spin Textures in Bilayer Tellurium

Jiajun Zhu,Botao Fu,Heyun Zhao,Wanbiao Hu

2024-01-15

Abstract:2D Ferroelectricity with switchable electric polarization has drawn widespread attention in condensed matter physics due to its crucial applications in non-volatile memory and ferroelectric spin devices. Despite recent progress in 2D ferroelectric, achieving the mono-elemental ferroelectricity still remains a great challenge because most nonmetallic mono-elemental materials are stabilized in nonpolar crystal structures. In this work, we theoretically designed mono-elemental ferroelectricity with tunable and significant spin textures in bilayer tellurium (BL-Te). Comprehensive quantitative polarization calculations demonstrate that asymmetric stacking in BL-Te can generate out-of-plane (OOP) polarization with a magnitude of 0.78 pC/m. This polarization stems from distinguishing interlayer and intra-layer contributions. Moreover, these stacked BL-Te, characterized by significant spin-orbit coupling, serve as an ideal platform for investigating both conventional spin polarization and layer-dependent/hidden spin polarization through ferroelectric reversion. Our work not only broaden the category of 2D mono-elemental ferroelectric but also offer a new platform for multifunctional nanodevices.

Materials Science,Mesoscale and Nanoscale Physics
Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Asif Ilyas,Shuling Xiang,Miaogen Chen,Muhammad Yar Khan,Hua Bai,Pimo He,Yunhao Lu,Renren Deng

DOI: https://doi.org/10.1039/d0nr06054b

IF: 6.7

2021-01-01

Nanoscale

Abstract:The electrical control of two-dimensional (2D) van der Waals ferromagnets is a step forward for the realization of spintronic devices. However, using this approach for practical applications remains challenging due to its volatile memory. Herein, we adopt an alternative strategy, where the bistable ferroelectric switches (P up arrow and P down arrow) of Sc2CO2 (SCO) assist the ferromagnetic states of Cr2Ge2Te6 (CGT) in order to achieve non-volatile memories. Moreover, MXene SCO, being an aided layer in multiferroic CGT/SCO hetero-structures, also modifies the electronic properties of CGT to half metal by its polarized P down arrow state. In contrast, the P up arrow state does not change the semiconducting nature of CGT. Hence, non-volatile, electrical-controlled switching of ferromagnetic CGT can be engineered by the two opposite ferroelectric states of single layer SCO. Importantly, the magnetic easy axis of CGT switches from in-plane to out-of-plane when the direction of electric polarization of SCO is altered from P down arrow to P up arrow.
Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

H. Wang,Z. R. Liu,H. Y. Yoong,T. R. Paudel,J. X. Xiao,R. Guo,W. N. Lin,P. Yang,J. Wang,G. M. Chow,T. Venkatesan,E. Y. Tsymbal,H. Tian,J. S. Chen

DOI: https://doi.org/10.1038/s41467-018-05662-y

IF: 16.6

2018-01-01

Nature Communications

Abstract:Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is required to miniaturize electronic devices. Direct visualization of stable ferroelectric polarization and its switching behavior in atomically thick films is critical for achieving this goal. Here, ferroelectric order at room temperature in the two-dimensional limit is demonstrated in tetragonal BiFeO 3 ultrathin films. Using aberration-corrected scanning transmission electron microscopy, we directly observed robust out-of-plane spontaneous polarization in one-unit-cell-thick BiFeO 3 films. High-resolution piezoresponse force microscopy measurements show that the polarization is stable and switchable, whereas a tunneling electroresistance effect of up to 370% is achieved in BiFeO 3 films. Based on first-principles calculations and Kelvin probe force microscopy measurements, we explain the mechanism of polarization stabilization by the ionic displacements in oxide electrode and the surface charges. Our results indicate that critical thickness for ferroelectricity in the BiFeO 3 film is virtually absent, making it a promising candidate for high-density nonvolatile memories.
Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium

Yao Wang,Zhenzhen Lei,Jinsen Zhang,Xinyong Tao,Chenqiang Hua,Yunhao Lu

DOI: https://doi.org/10.1088/0256-307x/40/11/117102

2023-01-01

Chinese Physics Letters

Abstract:Two-dimensional (2D) ferroelectric (FE) systems are promising candidates for non-volatile nanodevices. Previous studies mainly focused on 2D compounds. Though counter-intuitive, here we propose several new phases of tellurium with (anti)ferroelectricity. Two-dimensional films can be viewed as a collection of one-dimensional chains, and lone-pair instability is responsible for the (anti)ferroelectricity. The total polarization is determined to be 0.34 × 10 −10 C/m for the FE ground state. Due to the local polarization field in the FE film, we show a large Rashba splitting ( α R ∼ 2 eV⋅Å) with nonzero spin Hall conductivity for experimental detection. Furthermore, a dipole-like distribution of Berry curvature is verified, which may facilitate a nonlinear Hall effect. Because Rashba-splitting/Berry-curvature distributions are fully coupled with a polarization field, they can be reversed through FE phase transition. Our results not only broaden the elemental FE materials, but also shed light on their intriguing transport phenomena.
Ferroelectricity in 2D Elemental Materials

Xuanlin Zhang,Yunhao Lu,Lan Chen

DOI: https://doi.org/10.1088/0256-307X/40/6/067701

2023-01-01

Chinese Physics Letters

Abstract:Ferroelectric materials are typically made up of various elements.By introducing atomic displacements,[1]such as octahedral tilts/rotations[2,3]or interlayer sliding,[4-7]the positive and negative charge centers can be separated,re-sulting in spontaneous polarization.Due to their homo-geneity,it is difficult to achieve ferroelectricity in elemental materials where opposite charge centers must be gener-ated.However,electron degeneracy between identical ele-ments may be a crucial factor for achieving ferroelectricity in such materials.
Ferroelectricity-Driven Metallicity and Magnetic Skyrmions in van der Waals Cr2Ge2Te6/Hf2Ge2Te6 Multiferroic Heterostructure

Zheng Chen,Hongliang Hu,Wenjun Zhang,Xiaoping Wu,Ping Li,Changsheng Song

2024-10-12

Abstract:Two-dimensional (2D) multiferroic heterostructures present a promising platform for advanced spin devices by leveraging the coexisting ferromagnetic (FM) and ferroelectric (FE) orders. Through first-principles calculations and micromagnetic simulations, we reveal non-volatile control of metallicity and topological spin textures in the Cr2Ge2Te6/Hf2Ge2Te6(CGT/HGT) heterostructure. Notably, manipulating ferroelectric polarization in HGT significantly modulates the magnetic anisotropy energy (MAE) and Dzyaloshinskii-Moriya interaction (DMI) of CGT/HGT, reversing the easy magnetization axis from in-plane to out-of-plane. By analyzing the atomic-resolved SOC energy (\Delta Esoc), it is found that the cause of the change comes from the Fert-Levy mechanism. Additionally, this polarization control enables the creation and annihilation of bimerons and skyrmions, with interlayer sliding further altering magnetic ordering. Our findings offer valuable insights into magnetoelectric coupling and spin texture manipulation in 2D magnets, highlighting their potential for next-generation spintronic and memory devices.

Materials Science,Computational Physics
2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity

Yilv Guo,Xing Yu,Yehui Zhang,Xiwen Zhang,Shijun Yuan,Yafei Li,Shengyuan A. Yang,Jinlan Wang

DOI: https://doi.org/10.1021/acsnano.2c04017

IF: 17.1

2022-07-12

ACS Nano

Abstract:Multiferroic materials with tunable magnetoelectric orders enable the integration of sensing, data storage, and processing into one single device. The scarcity of single-phase multiferroics spurs extensive research in pursuit of composite systems combining different types of ferroic materials. In this work, spin-constrained photoelectric memory is proposed in two-dimensional (2D) layered magnetic/ferroelectric heterostructures, holding the possibility of low-power electrical write operation and...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Vertical Ferroelectric Switching by In-Plane Sliding of Two-Dimensional Bilayer WTe2.

Xingen Liu,Yali Yang,Tao Hu,Guodong Zhao,Chen,Wei Ren

DOI: https://doi.org/10.1039/c9nr05404a

IF: 6.7

2019-01-01

Nanoscale

Abstract:Based on first-principles calculations, we studied the ferroelectric properties of bilayer 1T'-WTe2. In this work, we discovered that the polarization stems from uncompensated out-of-plane interlayer charge transfer, which can be switched upon interlayer sliding of an in-plane translation. Our differential charge density results also confirmed that such ferroelectricity in the bilayer WTe2 is derived from interlayer charge transfer. The ferroelectric polarization directions further control the spin texture of the bilayer WTe2, which may have important applications in spintronics. Therefore, we propose a spin field effect transistor (spin-FET) design that may effectively improve the spin-polarized injection rate. In addition, the lattice strain has been found to have an important influence on the ferroelectric properties of the bilayer WTe2. One can effectively increase the polarization with a maximum at 3% tensile strain, whereas a 3% compressive strain can transform the bilayer WTe2 from the ferroelectric to paraelectric phase.
Ferroelectrically switchable magnetic multistates in MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$(Sb$_2$Te$_3$)$_n$ (n = 0, 1) thin films

Guoliang Yu,Chuhan Tang,Zhiqiang Tian,Ziming Zhu,Anlian Pan,Mingxing Chen,Xing-Qiu Chen

DOI: https://doi.org/10.1103/PhysRevB.108.014106

2023-09-28

Abstract:Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings (IMCs) based on the Heisenberg model and first-principles calculations. Our strategy relies on that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hopping channel between Mn-$e_g$ orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-to-ferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in MnBi$_2$Te$_4$ family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials.

Materials Science
Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers

Zhuang Ma,Pu Huang,Jin Li,Peng Zhang,Jiaxin Zheng,Wen Xiong,Fei Wang,Xiuwen Zhang

DOI: https://doi.org/10.1038/s41524-022-00740-8

IF: 12.256

2022-03-28

npj Computational Materials

Abstract:Abstract Monolayers of layered materials, such as graphite and molybdenum dichalcogenides, have been the focus of materials science in the last decades. Here, we reveal benign stability and intriguing physical properties in the thinnest monolayer wurtzite ( wz ) semiconductors, which can be exfoliated from their bulk and stacked to reform the wz crystals. The candidate ZnX and CdX (X = S, Se, Te) monolayers possess low cleavage energy and direct bandgaps, which harbor strongly coupled ferroelectricity and ferroelasticity with low transition barriers, giant in-plane negative Poisson’s ratio, as well as giant Rashba spin splitting, enabling the co-tunability of spin splitting and auxetic magnitudes via multiferroic switching. These wz monolayers can be used as building blocks of devices structures, due to their inherent “self-healable” capacity, which offer more flexibility for semiconductor fabrication and provide a natural platform to probe the interplay of multiple physical effects, bringing light into the rich physics in tetrahedral semiconductors.

materials science, multidisciplinary,chemistry, physical
Nonvolatile electrical control of 2D Cr 2 Ge 2 Te 6 and intrinsic half metallicity in multiferroic hetero-structures

Asif Ilyas,Shuling Xiang,Miaogen Chen,Muhammad Yar Khan,Hua Bai,Pimo He,Yunhao Lu,Renren Deng

DOI: https://doi.org/10.1039/d0nr06054b

IF: 6.7

2021-01-01

Nanoscale

Abstract:The electrical control of two-dimensional (2D) van der Waals ferromagnets is a step forward for the realization of spintronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Switchable hidden spin polarization and negative Poisson's ratio in two-dimensional antiferroelectric wurtzite crystals

Zhuang Ma,Jingwen Jiang,Gui Wang,Peng Zhang,Yiling Sun,Zhengfang Qian,Jiaxin Zheng,Wen Xiong,Fei Wang,Xiuwen Zhang,Pu Huang

DOI: https://doi.org/10.1088/1674-4926/44/12/122101

2024-01-24

Journal of Semiconductors

Abstract:Two-dimensional (2D) antiferroelectric materials have raised great research interest over the last decade. Here, we reveal a type of 2D antiferroelectric (AFE) crystal where the AFE polarization direction can be switched by a certain degree in the 2D plane. Such 2D functional materials are realized by stacking the exfoliated wurtzite (wz) monolayers with "self-healable" nature, which host strongly coupled ferroelasticity/antiferroelectricity and benign stability. The AFE candidates, i.e., ZnX and CdX (X = S, Se, Te), are all semiconductors with direct bandgap at Γ point, which harbors switchable antiferroelectricity and ferroelasticity with low transition barriers, hidden spin polarization, as well as giant in-plane negative Poisson's ratio (NPR), enabling the co-tunability of hidden spin characteristics and auxetic magnitudes via AFE switching. The 2D AFE wz crystals provide a platform to probe the interplay of 2D antiferroelectricity, ferroelasticity, NPR, and spin effects, shedding new light on the rich physics and device design in wz semiconductors.

physics, condensed matter
Ferroelectric switching of a two-dimensional metal

Zaiyao Fei,Wenjin Zhao,Tauno A. Palomaki,Bosong Sun,Moira K. Miller,Zhiying Zhao,Jiaqiang Yan,Xiaodong Xu,David H. Cobden

DOI: https://doi.org/10.1038/s41586-018-0336-3

IF: 64.8

2018-07-23

Nature

Abstract:A ferroelectric is a material with a polar structure whose polarity can be reversed (switched) by applying an electric field1,2. In metals, itinerant electrons screen electrostatic forces between ions, which explains in part why polar metals are very rare3–7. Screening also excludes external electric fields, apparently ruling out the possibility of ferroelectric switching. However, in principle, a thin enough polar metal could be sufficiently penetrated by an electric field to have its polarity switched. Here we show that the topological semimetal WTe2 provides an embodiment of this principle. Although monolayer WTe2 is centro-symmetric and thus non-polar, the stacked bulk structure is polar. We find that two- or three-layer WTe2 exhibits spontaneous out-of-plane electric polarization that can be switched using gate electrodes. We directly detect and quantify the polarization using graphene as an electric-field sensor8. Moreover, the polarization states can be differentiated by conductivity and the carrier density can be varied to modify the properties. The temperature at which polarization vanishes is above 350 kelvin, and even when WTe2 is sandwiched between graphene layers it retains its switching capability at room temperature, demonstrating a robustness suitable for applications in combination with other two-dimensional materials9–12.

multidisciplinary sciences
Elemental topological ferroelectrics and polar metals of few-layer materials

Hu Zhang,Lulu Zhao,RuiFeng Zhang,Chendong Jin,Ruqian Lian,Peng-Lai Gong,RuiNing Wang,JiangLong Wang,Xing-Qiang Shi

2023-09-26

Abstract:Ferroelectricity can exist in elemental phases as a result of charge transfers between atoms occupying inequivalent Wyckoff positions. We investigate the emergence of ferroelectricity in two-dimensional elemental materials with buckled honeycomb lattices. Various multi-bilayer structures hosting ferroelectricity are designed by stacking-engineering. Ferroelectric materials candidates formed by group IV and V elements are predicted theoretically. Ultrathin Bi films show layer-stacking-dependent physical properties of ferroelectricity, topology, and metallicity. The two-bilayer Bi film with a polar stacking sequence is found to be an elemental topological ferroelectric material. Three and four bilayers Bi films with polar structures are ferroelectric-like elemental polar metals with topological nontrivial edge states. For Ge and Sn, trivial elemental polar metals are predicted. Our work reveals the possibility of design two-dimensional elemental topological ferroelectrics and polar metals by stacking-engineering.

Materials Science,Mesoscale and Nanoscale Physics
Intrinsic multiferroic semiconductors with magnetoelastic coupling: two-dimensional MoTe<i<X</i< (<i<X</i< = F, Cl, Br, I) monolayers

Jin-Wei Gao,Lu Chen,Xu-Hong Li,Jun-Qin Shi,Teng-Fei Cao,Xiao-Li Fan,Center of Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnic University, Xi'an 710072, China

DOI: https://doi.org/10.7498/aps.73.20240829

IF: 0.906

2024-10-09

Acta Physica Sinica

Abstract:Author(s): Gao Jin-Wei, Chen Lu, Li Xu-Hong, Shi Jun-Qin, Cao Teng-Fei, Fan Xiao-Li Two-dimensional materials with both ferromagnetism and ferroelasticity present new possibilities for developing spintronics and multifunctional devices. These materials provide a novel method for controlling the direction of the magnetization axis by switching the ferroelastic state, achieving efficient and low-power operation of magnetic devices. Such properties make them a promising candidate for the next generation of non-volatile memory, sensors, and logic devices. By performing the first-principles calculations, the ferromagnetism, ferroelasticity, and magnetoelastic coupling in MoTe<i<x< (<i<x<="" 0.180="" 0.200="" 0.209="" 0.226="" 111.45="" 144.75="" 194.55="" 38.12%.="" 43.06%,="" 46.32%,="" 54.58%,="" 92.02="" ability="" and="" anisotropy="" are="" at="" atom,="" axes="" axis="" barriers="" between="" both="" br,="" calculations="" can="" cl,="" control="" controllable="" corresponding="" coupling="" curie="" development="" devices.<="" disturbances="" each="" easy="" ev="" exhibit="" ferroelastic="" ferroelasticity.="" ferromagnetism="" for="" foundation="" four="" highly="" holding="" i)="" i<="" in-plane="" indicate="" intrinsic="" investigated.="" k,="" laying="" long-range="" magnetic="" magnetization="" magnetoelastic="" maintain="" monolayers="" mote<i<x Acta Physica Sinica. 2024 73(19): 197501. Published 2024-10-05</i<x<>

physics, multidisciplinary
Two-dimensional 1T′ α -VXY (X = S, Se, Te; Y = Cl, Br, I): A multifunctional vanadium chalcohalide family with room-temperature ferromagnetism and sliding ferroelectricity

Junlin Luo,Haiyu Meng,Ruoyan Xu,Xiong-Xiong Xue,Yee Sin Ang

DOI: https://doi.org/10.1063/5.0190261

IF: 4

2024-03-11

Applied Physics Letters

Abstract:Two-dimensional (2D) ferromagnetic materials with Curie temperature (Tc) above room temperature have great potential ranging from spintronics to information processing and storage. Here, we computationally design a series of 1T′α-VXY (X = S, Se, Te; Y = Cl, Br, I) monolayers with the X and Y atoms arranged alternately in the 2D plane. VXY monolayers are ferromagnetic semiconductors with Tc much higher than room temperature. Furthermore, the symmetry breaking of VXY bilayers leads to sliding ferroelectricity with large reversible out-of-plane electric polarization and moderate interlayer sliding barriers. We further show that half-metal-to-semiconductor nonvolatile field-effect switching can be achieved in multiferroic van der Waals heterostructures composed of VXY and In2S3 ferroelectric substrates due to the synergistic effect between the polarization field-induced band edge shifting and the selective charge transfer at the interface. These findings reveal a promising role of 2D Janus 1T′α-VXY in spintronics, ferroelectric, and multiferroic device applications.

physics, applied
Observation of room-temperature ferroelectricity in elemental Te nanowires

Jinlei Zhang,Jiayong Zhang,Yaping Qi,Shuainan Gong,Run Zhao,Hongbin Yang,Zhenping Wu,Dapeng Cui,Lin Wang,Chunlan Ma,Ju Gao,Yong P. Chen,Yucheng Jiang

DOI: https://doi.org/10.48550/arxiv.2211.04066

2022-01-01

Abstract: Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in elemental materials, causing a lack of spontaneous electric polarization. Here, we report an unexpected room-temperature ferroelectricity in few-chain Te nanowires. Out-of-plane ferroelectric loops and domain reversal are observed by piezoresponse force microscopy. Through density functional theory, we attribute the ferroelectricity to the ion-displacement created by the interlayer interaction between lone pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, supporting a self-gated field-effect transistor. It enables a nonvolatile memory with high in-plane mobility, zero supply voltage, multilevel resistive states, and a high on/off ratio. Our work provides new opportunities for elemental ferroelectrics with polar structures and paves a way towards applications such as low-power dissipation electronics and computing-in-memory devices.
Robust Ferrimagnetism and Ferroelectricity in 2D ɛ-Fe2O3 Semiconductor with Ultrahigh Ordering Temperature

Tao Wang,Wuhong Xue,Huali Yang,Yongzhao Zhang,Shaobo Cheng,Zhiwei Fan,Run-Wei Li,Peng Zhou,Xiaohong Xu

DOI: https://doi.org/10.1002/adma.202311041

Abstract:2D single-phase multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high-density multilevel data storage. One of the current limitations for application is the scarcity of the materials, especially those combine ferromagnetism and ferroelectricity at high temperatures. Here, robust ferrimagnetism and ferroelectricity in 2D ɛ-Fe2O3 samples with both single-crystalline and polycrystalline form are demonstrated. Interestingly, the polycrystalline nanosheets also exhibit easily switchable ferroelectric polarizations comparable to that of single crystals. The existence of grain boundary does not hinder the switching and retention of ferroelectric polarization. Furthermore, the ɛ-Fe2O3 nanosheets show ferrimagnetic and ferroelectric Curie temperatures up to 800 K, which reaches record highs in 2D single-phase multiferroic materials. This work provides important progress in the exploration of 2D high-temperature single-phase multiferroics for potentially compact high-temperature information nanodevices.
Layer-Selective Non-Reciprocal Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics

Yangliu Wu,Deju Zhang,Yanning Zhang,Longjiang Deng,Bo Peng

2023-10-17

Abstract:Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which has been diligently sought after for a long time. The two-dimensional (2D) vdW multiferroics is a more exciting endeavour. To date, the nonvolatile manipulation of magnetism through ferroelectric polarization still remains challenging in a 2D vdW heterostructure multiferroic. Here, we report a van der Waals (vdW) heterostructure multiferroic comprising atomically thin layered antiferromagnet (AFM) CrI3 and ferroelectric (FE) {\alpha}-In2Se3. We demonstrate anomalously layer-selective nonreciprocal and nonvolatile electric-field control of magnetization by the ferroelectric polarization. The nonreciprocal electric control originates from an intriguing antisymmetric enhancement of interlayer ferromagnetic coupling in the opposite ferroelectric polarization configurations of {\alpha}-In2Se3, which favor to selectively switch the spins in the second layer. Our work provides numerous possibilities for creating diverse heterostructure multiferroics at the limit of few atomic layers for multi-stage magnetic memories and brain inspired in-memory computing.

Materials Science
Robust Ferrimagnetism and Ferroelectricity in 2D Ε-Fe2o3 Semiconductor with Ultrahigh Ordering Temperature

Tao Wang,Wuhong Xue,Huali Yang,Yongzhao Zhang,Shaobo Cheng,Zhiwei Fan,Run-Wei Li,Peng Zhou,Xiaohong Xu

DOI: https://doi.org/10.1002/adma.202311041

IF: 29.4

2024-01-01

Advanced Materials

Abstract:2D single-phase multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high-density multilevel data storage. One of the current limitations for application is the scarcity of the materials, especially those combine ferromagnetism and ferroelectricity at high temperatures. Here, robust ferrimagnetism and ferroelectricity in 2D epsilon-Fe2O3 samples with both single-crystalline and polycrystalline form are demonstrated. Interestingly, the polycrystalline nanosheets also exhibit easily switchable ferroelectric polarizations comparable to that of single crystals. The existence of grain boundary does not hinder the switching and retention of ferroelectric polarization. Furthermore, the epsilon-Fe2O3 nanosheets show ferrimagnetic and ferroelectric Curie temperatures up to 800 K, which reaches record highs in 2D single-phase multiferroic materials. This work provides important progress in the exploration of 2D high-temperature single-phase multiferroics for potentially compact high-temperature information nanodevices.

Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers

Theoretical Design of Mono-Elemental Ferroelectricity with Tunable Spin Textures in Bilayer Tellurium

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium

Ferroelectricity in 2D Elemental Materials

Ferroelectricity-Driven Metallicity and Magnetic Skyrmions in van der Waals Cr2Ge2Te6/Hf2Ge2Te6 Multiferroic Heterostructure

2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity

Vertical Ferroelectric Switching by In-Plane Sliding of Two-Dimensional Bilayer WTe2.

Ferroelectrically switchable magnetic multistates in MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$(Sb$_2$Te$_3$)$_n$ (n = 0, 1) thin films

Multiferroicity and giant in-plane negative Poisson’s ratio in wurtzite monolayers

Nonvolatile electrical control of 2D Cr 2 Ge 2 Te 6 and intrinsic half metallicity in multiferroic hetero-structures

Switchable hidden spin polarization and negative Poisson's ratio in two-dimensional antiferroelectric wurtzite crystals

Ferroelectric switching of a two-dimensional metal

Elemental topological ferroelectrics and polar metals of few-layer materials

Intrinsic multiferroic semiconductors with magnetoelastic coupling: two-dimensional MoTe<i<X</i< (<i<X</i< = F, Cl, Br, I) monolayers

Two-dimensional 1T′ α -VXY (X = S, Se, Te; Y = Cl, Br, I): A multifunctional vanadium chalcohalide family with room-temperature ferromagnetism and sliding ferroelectricity

Observation of room-temperature ferroelectricity in elemental Te nanowires

Robust Ferrimagnetism and Ferroelectricity in 2D ɛ-Fe2O3 Semiconductor with Ultrahigh Ordering Temperature

Layer-Selective Non-Reciprocal Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics

Robust Ferrimagnetism and Ferroelectricity in 2D Ε-Fe2o3 Semiconductor with Ultrahigh Ordering Temperature