Abstract:Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings (IMCs) based on the Heisenberg model and first-principles calculations. Our strategy relies on that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hopping channel between Mn-$e_g$ orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-to-ferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in MnBi$_2$Te$_4$ family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials.

What problem does this paper attempt to address?

This paper aims to solve the problem of how to regulate the magnetic polymorphism in two - dimensional magnetic materials through ferroelectric materials. Specifically, the research objects are MnBi₂Te₄(Bi₂Te₃)ₙ and MnSb₂Te₄(Sb₂Te₃)ₙ (n = 0, 1) thin films. These materials have A - type antiferromagnetism and topological properties. Through the polarization of ferroelectric materials, the inter - layer magnetic couplings (IMCs) of these films can be manipulated, thereby achieving the conversion of magnetic states, such as the transition from antiferromagnetic state to ferromagnetic state. The key points of the paper are as follows: 1. **Ferroelectric regulation mechanism**: By changing the polarization state of ferroelectric materials, the inter - layer magnetic coupling in MnBi₂Te₄ and MnSb₂Te₄ thin films can be switched on and off, and then the magnetic state tunability can be achieved. 2. **Theoretical model and calculation**: Based on the Heisenberg model and first - principles calculations, the influence of ferroelectric materials on the inter - layer magnetic coupling was studied. The results show that through appropriate ferroelectric materials, the reversible conversion of the inter - layer magnetic coupling can be achieved. 3. **Experimental verification**: Through calculation and simulation, the influence of ferroelectric materials on the magnetic states of MnBi₂Te₄ and MnSb₂Te₄ thin films in different polarization states was verified. It was found that the polarization state of ferroelectric materials can significantly affect the inter - layer magnetic coupling, thereby achieving the switching of magnetic states. 4. **Polymorphic magnetism and topological properties**: The magnetic polymorphism and topological properties under ferroelectric regulation were studied. It was found that under different ferroelectric polarization states, the films can exhibit different magnetic states and topological properties, such as different Chern numbers. In conclusion, this paper proposes a method for regulating the magnetic states of two - dimensional magnetic materials through ferroelectric materials, providing new ideas for the development of high - performance electronic devices.

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