Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method

Mirko Rocci,Valeria Demontis,Domenic Prete,Daniele Ercolani,Lucia Sorba,Fabio Beltram,Giovanni Pennelli,Stefano Roddaro,Francesco Rossella
DOI: https://doi.org/10.1007/s11665-018-3715-x
IF: 2.3
2018-10-29
Journal of Materials Engineering and Performance
Abstract:Abstract We demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3ω technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency ω and measuring the voltage drop across the nanostructure at frequency 3ω. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated side-gate electrodes in combination with the SiO2/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.
materials science, multidisciplinary
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