Measurement of thermal conductance of silicon nanowires at low temperature

Olivier Bourgeois,T. Fournier,J. Chaussy
DOI: https://doi.org/10.1063/1.2400093
2006-08-31
Abstract:We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on Silicon On Insulator (SOI) substrate. We measure the thermal conductance of the phonon wave guide by the 3 method. The cross-section of the nanowire approaches the dominant phonon wavelength in silicon which is of the order of 100 nm at 1K. Above 1.3K the conductance behaves as T3, but a deviation is measured at the lowest temperature which can be attributed to the reduced geometry.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: the measurement of the thermal conductivity of single - crystal silicon nanowires and their behavioral characteristics under low - temperature conditions. Specifically, the researchers are concerned with: 1. **Thermal conductivity measurement**: How to accurately measure the thermal conductivity of mechanically suspended single - crystal silicon nanowires at low temperatures. 2. **Size effect**: To study the influence of geometric size on thermal conductivity at the nanoscale, especially when approaching the dominant phonon wavelength (about 100 nm). 3. **Temperature dependence**: To explore the variation law of thermal conductivity with temperature, especially the phenomenon of deviating from the \(T^3\) law when the temperature is below 1.3 K. ### Detailed Explanation #### 1. Thermal conductivity measurement The researchers used the 3ω method to measure thermal conductivity. By applying an alternating current \(I_{ac}=I_0\sin(\omega t)\) and generating temperature oscillations on the nanowire, the third - harmonic \(V_{3\omega}\) in the voltage signal can be measured. According to the formula: \[V_{3\omega}=\frac{4}{3}\pi\alpha R_{ac}\frac{K}{\omega}\] The thermal conductivity \(K\) can be calculated. #### 2. Size effect Since the cross - section of the nanowire is close to the dominant phonon wavelength (about 100 nm), this makes phonon transmission significantly affected by geometric size. Especially at low temperatures, the phonon mean free path increases, resulting in important effects of boundary scattering and specular reflection on thermal conductivity. #### 3. Temperature dependence The experimental results show that above 1.3 K, the thermal conductivity follows the \(T^3\) law, but there are deviations at lower temperatures. This deviation may be due to the increase in the phonon mean free path, resulting in a change in the phonon transmission mode. Specifically: \[K(T) = 2.62\times10^{-11}T^3\] In addition, the researchers also proposed a theoretical model to explain this deviation, that is: \[K=\frac{\pi^4}{15}\frac{k_B L S v_s}{h^3}T^3\] where \(L\) is the effective length of the nanowire, \(S\) is the cross - sectional area, \(v_s\) is the speed of sound, \(h\) is Planck's constant, and \(k_B\) is Boltzmann's constant. ### Conclusion Through these studies, the authors have presented the measurement results of the thermal conductivity of single - crystal silicon nanowires under low - temperature conditions and revealed the significant effects of geometric size and temperature on thermal conductivity. These findings are of great significance for future design of suspended membranes for thermal measurement or development of heat - sensitive devices (such as calorimeters, thermoelectric detectors, MEMS or NEMS).