Measurement of thermal conductance of silicon nanowires at low temperature

Olivier Bourgeois,T. Fournier,J. Chaussy
DOI: https://doi.org/10.1063/1.2400093
2006-08-31
Abstract:We have performed thermal conductance measurements on individual single crystalline silicon suspended nanowires. The nanowires (130 nm thick and 200 nm wide) are fabricated by e-beam lithography and suspended between two separated pads on Silicon On Insulator (SOI) substrate. We measure the thermal conductance of the phonon wave guide by the 3 method. The cross-section of the nanowire approaches the dominant phonon wavelength in silicon which is of the order of 100 nm at 1K. Above 1.3K the conductance behaves as T3, but a deviation is measured at the lowest temperature which can be attributed to the reduced geometry.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?