Abstract:The electrochemical nature of the contact firing reactions is studied by short‐circuiting the Ag fingers to the underlying Si emitter. The short‐circuit effect is gradually attenuated along the finger line away from the short‐spot owing to the ohmic drop of the electrode potential along the Si substrate. The contact quality is strongly correlated to the Ag crystallites formed on the emitter surface. The 6‐in full‐cell tests demonstrate that the segmentation of Ag fingers does not necessarily mitigate the short‐circuit effect. The "short‐circuit effect" in the fire‐through Ag metallization of crystalline Si (c‐Si) solar cells refers to the poor contact formation caused by an electrical short between the Ag gridline and underlying Si emitter during contact firing. This study employs two different Ag pastes containing PbO‐ and TeO2‐based glass frits to investigate the dependence of the short‐circuit effect on the length and pattern of the Ag finger lines. The results show that regardless of the employed glass frits, the short‐circuit effect is mitigated even near the short spot and gradually attenuated along the finger line away from the spot as the Ag finger line extends radially longer than the critical length (>35 mm). We demonstrate that this attenuation is independent of the finger line width and predominantly attributed to the ohmic drop of the electrode potential along the Si substrate. The results also show that, regardless of the glass frits, the contact quality is strongly correlated with the density of the Ag crystallites that are formed on the Si emitter surface. The 6‐in full‐cell tests indicate that the isolation of the short spots by segmenting the Ag finger lines does not necessarily result in the mitigation of the short‐circuit effect. We suggest that the reduction of Ag+ on the Si emitter surface should be the key process that must be controlled to achieve high‐quality contacts during contact firing, providing further insights into the electrochemical characteristics of contact firing reactions for the future development of Ag pastes.

Lowering firing temperature of a p-type passivated emitter rear contact Si solar cell via current injection

Optimized Phosphorus Diffusion Process and Performance Improvement of C-Si Solar Cell by Eliminating SiP Precipitates in the Emitter

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Investigation of the mechanism of the Ag/SiNx firing-through process of screen-printed silicon solar cells

The Effect and Mechanism of Current Injection to Suppress Light and Elevated Temperature Induced Degradation in P-Type Cast-Mono and Multicrystalline Silicon Passivated Emitter and Rear Cells

Attenuation of short‐circuit effect along screen‐printed silver gridlines during the contact firing process of crystalline silicon solar cells

Development of Phosphorus-Doped Nanoscale Poly-Si Passivating Contacts via Inkjet Printing for Application in Silicon Solar Cells

Method and Equipment for Reducing the Efficiency Degradation of Monocrystalline Passivated Emitter and Rear Cells

Current Injection‐induced Performance Enhancement in n‐type Silicon Heterojunction Solar Cells

Passivation properties of tunnel oxide layer in passivated contact silicon solar cells

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells

Phosphorus-diffused polysilicon contacts for solar cells

A High-Quality Dopant-Free Electron-Selective Passivating Contact Made from Ultra-Low Concentration Water Solution

Reduced Toxicity and Aqueous-Based Solvent Using Phosphoric Acid as the Dopant Source for Formation Emitter Layer of Silicon Solar Cells

Improved Electrical Performance of Low-Temperature-Cured Silver Electrode for Silicon Heterojunction Solar Cells

Low Recombination Firing-Through Al Paste for N-Type Solar Cell with Boron Emitter

Contact control of Al/Si interface of Si solar cells by local contact opening method

Post annealing to improve the sheet resistance and uniformity of emitter for enhancing conversion efficiency of mass-produced mc-Si solar cells

Enhanced passivation and stability of negative charge injected SiN x with higher nitrogen content on the boron diffused surface of n-type Si solar cells