Abstract:AbstractA thermomechanical model to describe the mechanisms of polishing pad scratching in chemical–mechanical planarization (CMP) has been formulated and investigated. CMP is a necessary process in integrated circuit (IC) fabrication to planarize wafers with nanoscale features after patterned layer deposition. Polishing pad asperities can produce microscale scratches on the wafer surface during CMP, reducing IC manufacturing yields. The constructed thermomechanical model accounts for stresses of the pad and wafer contact and also provides the means to track input energy dissipation during CMP. Tracking energy dissipation offers information about processes that may influence scratch production. This knowledge ultimately produces a greater physical understanding of CMP for the prevention of pad scratching. Polishing pad stress relaxation experiments demonstrate the importance of viscoelastic and plastic strain energy dissipation with its effects on the wafer stress field. Scratch producing ability of the polishing pad is found to decrease with use in CMP, with slurry soaking and increasing polishing time. Mechanical behavior of the polishing pad is demonstrated to differ when in compression and in tension. Compressibility of the pad material is shown to be significant in stress modeling through experimental measurement of polishing pad volume change. Differential scanning calorimetry of used polishing pad samples revealed energy dissipation into the polishing pad surface with increasing polishing time of CMP. Energy dissipation processes influence pad scratching in CMP. Analytical wafer stress field modeling unveils that the scratching ability of a polishing pad decreases when it is less stiff or has a smoother surface.

On the Planarization Mechanism and Pad Aging Effects of Soft Pad Polishing: A Perspective From the Micro-Mechanical Properties of Soft Pads

Study on the Removal Function of Annular Polishing Pad Based on the Computer Controlled Polishing Technology

Energy dissipation and constitutive modeling for a mechanistic description of pad scratching in chemical–mechanical planarization

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

Analyzing the effects of pad asperity on chemical mechanical polishing of copper thin film wafer

Micro-scale contact behavior and its effect on the material removal process during chemical mechanical polishing

Analysis on Pad Effects in Chemical Mechanical Polishing

Novel Probability Density Function of Pad Asperity by Wear Effect over Time in Chemical Mechanical Planarization

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Prediction of Pad Wear Profile and Simulation of Its Influence on Wafer Polishing

Mechanism of Mid-Spatial-frequency Waviness Removal by Viscoelastic Polishing Tool

The Deterioration Characteristics and Mechanism of Polishing Pads in Chemical Mechanical Polishing of Fused Silica

Modeling the microscale contact status in chemical mechanical polishing process

A Contact-Mechanics-Based Model For General Rough Pads In Chemical Mechanical Polishing Processes

A model for chemical–mechanical polishing of a material surface based on contact mechanics

A quantitative study of removal mechanism of copper polishing based on a single pad-asperity polishing test

Investigating the Impact of Pad Groove Depth Reduction on Process Variation in Oxide Chemical Mechanical Polishing

A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process

High Pressure on Asperity Surface Caused by Nano Particles’ Behavior in Non-Newtonian Slurries

Estimating Chemical Mechanical Polishing Pad Wear with Compressibility