High-Frequency and Noise Models in BSIM-IMG

Pragya Kushwaha,Yogesh Singh Chauhan

DOI: https://doi.org/10.1016/b978-0-08-102401-0.00008-x

2019-01-01

Abstract:In this chapter, we have discussed step-by-step DC and RF modeling of FDSOI transistor. We have also discussed the modeling of different sources of noise in FDSOI transistor.

What problem does this paper attempt to address?

RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model

Pragya Kushwaha,Sourabh Khandelwal,Juan Pablo Duarte,Chenming Hu,Yogesh Singh Chauhan

DOI: https://doi.org/10.1109/tmtt.2016.2557327

IF: 4.3

2016-06-01

IEEE Transactions on Microwave Theory and Techniques

Abstract:In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained.

engineering, electrical & electronic
New Oscillator-Based Random Source Circuit and Fast Simulation

Zhang Leilei,Shen Haibin

DOI: https://doi.org/10.3969/j.issn.1003-353x.2011.04.013

2011-01-01

Abstract:Based on the research of oscillator circuits,the architecture of oscillator-based random source was designed.A new type of oscillator was introduced in the architecture which takes use of combinational logic circuits with complex feedback network.It is easy to be implemented and hard to be influenced by environment as the traditional oscillator.Meanwhile,it could speed up the generation of random bit and improve the random property.To realize fast simulation,a circuit model for the new random source was established by MATLAB/Simulink.The main noise in CMOS circuit was analyzed and the noise model was introduced to improve the simulation veracity.The simulation test of the system is carried out finally,and the result indicates that the output sequence of the model has good randomness.
The simulation model and ASIC implementation of a random bit source circuit

Yanfang Wang,Haibin Shen

DOI: https://doi.org/10.1109/ASICON.2009.5351589

2009-01-01

Abstract:This paper presents a random bit source circuit for information security SoC platform application. A new type of oscillator, taking the form of combinational logic circuit and using complex feedback networks, is applied in the circuit. A series of MATLAB/Simulink models based on the circuit structure are established for the random bit source. To improve the accuracy, models for the two dominant noise sources in CMOS circuits are also presented. These models make the fast simulation realizable. ASIC implementation is performed to verify the circuit design and simulation model. The theory analyses and testing results both indicate that the generated random binary sequences have a high speed and good randomness properties..
Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Yang Liu,Shuqing Cao,Dutton, R.W.

DOI: https://doi.org/10.1109/sispad.2006.282847

2006-01-01

Abstract:Two numerical models based on the impedance field method have been implemented to investigate the flicker noise in MOSFETs with high-kappa gate stacks. The equivalent model uses approximate channel current noise source, while the physical model is based on the Langevin approach and accounts for the non-local carrier tunneling. The scaling impact on the flicker noise is investigated with the developed models. The validity of the models in the sub-threshold regime is examined. Comparison with experimental data indicates the importance of modeling the nonuniform trap energy distribution. The degradation of the flicker noise performance due to halo doping is also studied
BSIM-IMG: Compact model for RF-SOI MOSFETs

Pragya Kushwaha,Harshit Agarwal,Sourabh Khandelwal,Juan-Pablo Duarte,Aditya Medury,Chenming Hu,Yogesh S. Chauhan

DOI: https://doi.org/10.1109/drc.2015.7175688

2015-06-01

Abstract:Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.
Methodology For Modeling Simultaneous Switching Noise In Bga Packaging

Song Li,Xuetao Weng

DOI: https://doi.org/10.1109/ICEPT.2008.4606974

2008-01-01

Abstract:Advances in BGA packaging technologies have led to a dramatic increase in the performance of integrated circuits. Noise source such as supply bounce, signal coupling, and reflections results in reduced performance. The work presents techniques to model and improve performance the performance of BGA designs without moving toward advanced packaging. A single, unified mathematical framework is presented that predicts the performance of a given package depending on the package parasitics. Using 3-Bit Bus example about the package, a methodology is presented to analyse mutual inductive signal coupling and mutual capacitive signal coupling and return current. The performance model illustrate that the per-pin performance is significantly reduced, where the number of witching signals is increasing.
Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

Chia-Yu Chen,Yang Liu,Robert W. Dutton,Junko Sato-Iwanaga,Akira Inoue,Haruyuki Sorada

DOI: https://doi.org/10.1109/TED.2008.925329

IF: 3.1

2008-01-01

IEEE Transactions on Electron Devices

Abstract:Device-level simulation capabilities have been developed to investigate low-frequency noise behavior in p-type Si0.7Ge0.3/Si heterostructure MOS (SiGe p-HMOS) transistors. The numerical model is based on the impedance field method; it accounts for a trap-induced carrier number fluctuation, a layer-dependent correlated mobility fluctuation, and a Hooge mobility fluctuation in the buried and parasit...
An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Yunqiu Wu,Qinghe Xu,Chenxi Zhao,Jun Liu,Yiming Yu,Wenyan Yin,Kai Kang

DOI: https://doi.org/10.1109/lmwc.2017.2780766

IF: 3

2018-01-01

IEEE Microwave and Wireless Components Letters

Abstract:An RF CMOS model incorporating an improved substrate coupling network is developed. The proposed model focuses on characterizing the nonlinear phase of S12 when a transistor is under zero-bias condition. In addition, a corresponding parameter extraction technique of the model is proposed. To validate this model, a set of transistors fabricated in a commercial 90-nm CMOS process is investigated under multibias conditions. Comparison between measurement and calculation results shows that good agreement has been achieved, which indicates that the proposed model can accurately characterize the performance of transistors up to 66 GHz.
Symmetric BSIM-SOI—Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

Chetan Kumar Dabhi,Dinesh Rajasekharan,Girish Pahwa,Debashish Nandi,Naveen Karumuri,Sreenidhi Turuvekere,Anupam Dutta,Balaji Swaminathan,Srikanth Srihari,Yogesh S. Chauhan,Sayeef Salahuddin,Chenming Hu

DOI: https://doi.org/10.1109/ted.2024.3363110

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:In this article, we present a symmetric surface-potential-based model for dynamic depletion (DD) device operation of silicon-on-insulator (SOI) FETs for RF and analog IC design applications. The model accurately captures the device behavior in partial depletion (PD) and full depletion (FD) modes, as well as in the transition from PD to FD, based on device geometry, doping, and bias conditions. The model also exhibits an excellent source–drain symmetry during dc and small-signal simulations, resulting in error-free higher order harmonics. The model is fully scalable with bias, temperature, and geometry and has been validated extensively with real device data from the industry. The symmetric BSIM-SOI model is developed in Verilog-A and compatible with all commercial SPICE simulators, e.g., HSPICE, Spectre, and ADS.

engineering, electrical & electronic,physics, applied
Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Yayi Chen,Xingji Liu,Dengyun Lei,Yuan Liu,Rongsheng Chen,Yao Ni,Hoi-Sing Kwok,Wei Zhong

DOI: https://doi.org/10.1109/jeds.2024.3375867

2024-01-01

IEEE Journal of the Electron Devices Society

Abstract:The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the $\Delta \text{N}$ model in devices with SiO2-SiNx layers, and by the $\Delta \text{N}$ - $\Delta \mu $ model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge’s parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs.

engineering, electrical & electronic
Modeling of the Simultaneous Switching Noise in High Speed Electronic Circuit with the Integral Equation Method and Vector Fitting Method

Guo-Ping Zou,Xing-Chang Wei,Er-Ping Li,Xiang Cui,Wei-Dong Zhang

DOI: https://doi.org/10.1109/tmag.2010.2089433

IF: 1.848

2011-01-01

IEEE Transactions on Magnetics

Abstract:Simultaneous switching noise (SSN, also called delta-I noise) has become a tremendous challenge to the reliable operation of high speed electronic circuits. Etching narrow slots on the power or ground plane is one of the efficient techniques to isolate the SSN. A new method for modeling SSN of power-ground planes with narrow slot is proposed in this paper. Firstly, the gapped power-ground planes characteristic is derived from a hybrid field-circuit method. This method makes a full use of the gapped power-ground planes physical structure, takes into account both the parallel power-ground planes characteristic and slot coupling effect in one model. Then, the frequency domain transfer function between two ports of power-ground planes can be obtained from this model. Secondly, in order to overcome the conventional fast Fourier transform inevitable flaws, the vector fitting technique is used to approximate the transfer function as a rational function. Finally, the SSN voltage can be derived from this rational function and exciting current.
Noise optimization of the source follower of a CMOS pixel using BSIM3 noise model

Swaraj Mahato,Guy Meynants,Gert Raskin,J. De Ridder,H. Van Winckel

DOI: https://doi.org/10.1117/12.2231190

2016-09-14

Abstract:CMOS imagers are becoming increasingly popular in astronomy. A very low noise level is required to observe extremely faint targets and to get high-precision flux measurements. Although CMOS technology offers many advantages over CCDs, a major bottleneck is still the read noise. To move from an industrial CMOS sensor to one suitable for scientific applications, an improved design that optimizes the noise level is essential. Here, we study the 1/f and thermal noise performance of the source follower (SF) of a CMOS pixel in detail. We identify the relevant design parameters, and analytically study their impact on the noise level using the BSIM3v3 noise model with an enhanced model of gate capacitance. Our detailed analysis shows that the dependence of the 1/f noise on the geometrical size of the source follower is not limited to minimum channel length, compared to the classical approach to achieve the minimum 1/f noise. We derive the optimal gate dimensions (the width and the length) of the source follower that minimize the 1/f noise, and validate our results using numerical simulations. By considering the thermal noise or white noise along with 1/f noise, the total input noise of the source follower depends on the capacitor ratio CG/CFD and the drain current (Id). Here, CG is the total gate capacitance of the source follower and CFD is the total floating diffusion capacitor at the input of the source follower. We demonstrate that the optimum gate capacitance (CG) depends on the chosen bias current but ranges from CFD/3 to CFD to achieve the minimum total noise of the source follower. Numerical calculation and circuit simulation with 180nm CMOS technology are performed to validate our results.

Instrumentation and Methods for Astrophysics
MOSFET Modeling for RF IC Design

Yuhua Cheng,M. Jamal Deen,Chih-Hung Chen,Y. Cheng,M.J. Deen,C.-H. Chen

DOI: https://doi.org/10.1109/ted.2005.850656

IF: 3.1

2005-07-01

IEEE Transactions on Electron Devices

Abstract:High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC) design is discussed. Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and HF. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a MOSFET are analyzed to obtain a physics-based RF model. The procedures of the HF model parameter extraction are also developed. A subcircuit RF model based on the discussed approaches can be developed with good model accuracy. Further, noise modeling is discussed by analyzing the theoretical and experimental results in HF noise modeling. Analytical calculation of the noise sources has been discussed to understand the noise characteristics, including induced gate noise. The distortion behavior of MOSFET and modeling are also discussed. The fact that a MOSFET has much higher “low-frequency limit” is useful for designers and modelers to validate the distortion of a MOSFET model for RF application. An RF model could well predict the distortion behavior of MOSFETs if it can accurately describe both dc and ac small-signal characteristics with proper parameter extraction.

engineering, electrical & electronic,physics, applied
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs

Chetan Kumar Dabhi,Debashish Nandi,Keshari Nandan,Dinesh Rajasekharan,Girish Pahwa,Naveen Karumuri,Sreenidhi Turuvekere,Anupam Dutta,Balaji Swaminathan,Srikanth Srihari,Yogesh S. Chauhan,Sayeef Salahuddin,Chenming Hu

DOI: https://doi.org/10.1109/ted.2024.3363117

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:In this part, we present a new charge-based symmetric compact model of partially depleted silicon-on-insulator (PDSOI) technology. The model’s core charge calculations are based on the industry-standard Berkeley short-channel IGFET model (BSIM)-BULK platform and fully utilize its speed, robustness, and symmetry properties. Further, the SOI-specific effects (namely, impact ionization, body leakage currents, junction leakage, etc.) are integrated from the industry-standard legacy BSIM-SOI model. The model can accurately capture the floating body effect, which is crucial for PDSOI technology. The linear and nonlinear body contact (BC) models have also been implemented for BC PDSOI devices. The model passes source–drain symmetry tests for both dc and small-signal simulations, resulting in excellent harmonic balance characteristics, critical for RF applications. The model is validated with the state-of-the-art PDSOI device data from the industry.

engineering, electrical & electronic,physics, applied
Noise modeling for RF CMOS circuit simulation

Andries J. Scholten,Luuk F. Tiemeijer,Ronald van Langevelde,Ramon J. Havens,Adrie T. A. Zegers-van Duijnhoven,Vincent C. Venezia,A.J. Scholten,L.F. Tiemeijer,R. van Langevelde,R.J. Havens,A.T.A. Zegers-van Duijnhoven,V.C. Venezia

DOI: https://doi.org/10.1109/ted.2003.810480

IF: 3.1

2003-03-01

IEEE Transactions on Electron Devices

Abstract:The RF noise in 0.18-$\mu$ m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the $1/f$ noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs.

engineering, electrical & electronic,physics, applied
BSIM Model Research and Recent Progress

He Jin,Chan Mansun,Xi Xuemei,Wan Hui,Pin Su,Ali Niknejad,Hu Chenming

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.03.002

2006-01-01

Chinese Journal of Semiconductors

Abstract:: The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California,Berkeley,including BSIM5 research,BSIM4 enhancements,and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements.BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice, via the calculation of the body potential△Vbi and body current/charge, helps circuit designers in the trend of the coexistence of PD and FD devices.
Numerical modeling of RF noise in scaled MOS devices

C. Jungemann,B. Neinhüs,C.D. Nguyen,A.J. Scholten,L.F. Tiemeijer,B. Meinerzhagen

DOI: https://doi.org/10.1016/j.sse.2005.10.037

2006-01-01

Abstract:A new approach to numerical noise simulation for MOSFETs based on bipolar 2D drift-diffusion and hydrodynamic models is presented, where the hierarchical approach for volume transport has been extended to the case of inversion layers. With the new models RF noise in scaled NMOSFETs is investigated and simulation results are compared to measurements for a 180nm technology. Important noise quantities like the drain and gate excess noise factors and the gate/drain correlation coefficient are discussed in detail. It is found that the drain excess noise factor increases only moderately in short channel devices down to 70nm gate length independent of the device type (bulk, SOI or double gate). Although the gate excess noise factor increases significantly at shorter gate lengths, the minimum noise figure strongly decreases predicting superior noise performance for sub-100nm devices. Furthermore, the impact of the substrate resistance on RF noise is discussed including bias conditions near breakdown, where carrier generation by impact ionization becomes significant.

physics, condensed matter, applied,engineering, electrical & electronic
A Novel Integrated Approach for Simulation of Electromagnetic Susceptibility Problem

HF Jin,EP Li,EX Liu

DOI: https://doi.org/10.1109/isemc.2005.1513556

2005-01-01

Abstract:This paper presents a systematic approach for electromagnetic susceptibility (EMS) analysis of high speed circuit with the presence of an electromagnetic interference. With numerical analysis, the effect of external electromagnetic noise on the interconnect is characterized and modeled as equivalent current source. At the same time, the macromodel of Internet subnetwork is constructed through vector fitting method. Then, the resultant macromodel and equivalent current source are ready to be synthesized into SPICE-compatible circuit simulator to efficiently expedite the transient analysis of the hybrid interconnects and lumped circuit elements with the external electromagnetic interference. Numerical example exhibits that this systematic approach is a computationally efficient method to solve the electromagnetic susceptibility problems, in which the external electromagnetic interference effects are fully considered.
High-frequency small signal AC and noise modeling of MOSFETs for RF IC design

Yuhua Cheng,Chih-Hung Chen,M. Matloubian,M.J. Deen

DOI: https://doi.org/10.1109/16.987109

IF: 3.1

2002-03-01

IEEE Transactions on Electron Devices

Abstract:In this paper, high-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both $y$ parameter and $f_T$ characteristics. Good model accuracy is achieved against measurements for a 0.25 $\mu$ m RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models.

engineering, electrical & electronic,physics, applied
Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling

Junjie Wu,Pengpeng Ren,Chenyang Zhang,Yu Xiao,Yongkang Xue,Yu Li,Xiaolin Wang,Lining Zhang,Junhua Liu,Jianfu Zhang,Runsheng Wang,Zhigang Ji,Ru Huang

DOI: https://doi.org/10.1109/IEDM45741.2023.10413861

2023-01-01

Abstract:In this paper, a new physical-based model for flicker noise in advanced FinFET technology is proposed based on separation of intertwined noise sources. The proposed separation method can well clarify the sources of flicker noise, enabling the modeling of different components independently. The accuracy of this model is validated by the full-scale bias and device size dependencies of flicker noise, as well as its variations. It is observed that ignoring noise sources other than oxide traps can result in an underestimation of approximately 60% under operating condition. By introducing the equivalent circuit for simulation, the new model is readily to be used with commercial simulators for circuit-level analysis.

High-Frequency and Noise Models in BSIM-IMG

RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model

New Oscillator-Based Random Source Circuit and Fast Simulation

The simulation model and ASIC implementation of a random bit source circuit

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

BSIM-IMG: Compact model for RF-SOI MOSFETs

Methodology For Modeling Simultaneous Switching Noise In Bga Packaging

Numerical Study of Flicker Noise in p-Type <formula formulatype="inline"><tex>$ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$</tex> </formula> Heterostructure MOSFETs

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Symmetric BSIM-SOI—Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Modeling of the Simultaneous Switching Noise in High Speed Electronic Circuit with the Integral Equation Method and Vector Fitting Method

Noise optimization of the source follower of a CMOS pixel using BSIM3 noise model

MOSFET Modeling for RF IC Design

Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs

Noise modeling for RF CMOS circuit simulation

BSIM Model Research and Recent Progress

Numerical modeling of RF noise in scaled MOS devices

A Novel Integrated Approach for Simulation of Electromagnetic Susceptibility Problem

High-frequency small signal AC and noise modeling of MOSFETs for RF IC design

Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling