Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

Nicholas Blumenschein,Tania Paskova,John F. Muth

DOI: https://doi.org/10.1002/pssa.201900098

2019-08-16

physica status solidi (a)

Abstract:<p>Pulsed laser deposition (PLD) has been used to grow oriented single crystalline β‐gallium oxide (β‐Ga₂O₃) thin films on c‐plane sapphire substrates by optimized growth temperature and pressure. The morphology and crystallinity of the thin films are examined by X‐ray diffraction and atomic force microscopy. The thin films were used as the semiconductor layer for metal‐semiconductor‐metal (MSM) photodetector devices with various electrode designs. The ultraviolet photodetectors were characterized under 250 nm illumination, showing a high current amplitude increase over dark current conditions that approached three orders of magnitude at a 6 V bias for an optimized growth pressure of 1 × 10⁻³ Torr. The photodetectors transient response was also measured, allowing for defect analysis to be performed. A peak spectral responsivity of 30.45 A W⁻¹ was measured at 250 nm incident illumination.</p><p>This article is protected by copyright. All rights reserved.</p>