Abstract:For plastic electronics and optics, the fabrication of smooth, transparent and stable crack-free inorganic oxide films (and patterning) on flexible polymeric substrates with strong bonding strength and controllable thickness from nanometers to micrometers is a key but still remains a challenge. Among versatile inorganic oxides, silica oxide film as SiO x is especially important because this semiconductor material could provide crucial properties in devices or serve as a base layer for further multilayer construction. In this paper, we describe a new interface-directed sol-gel method to fabricate flexible high quality silicon oxide film onto commodity plastics. The resulting crack-free silica film has strong covalent bonding with polymer substrates, homogeneous morphology with ultralow roughness, highly optical transparency, tunable thickness from nm to μm, and easy patterning ability. Such fabrication strategy relies on a novel photocatalytic oxidation reaction by photosensitive ammonium persulfate (APS), which is able to fabricate highly reactive hydroxyl monolayer surface on inert polymeric substrates. This kind of hydroxylated surface could serve as nucleation and growth sites to initiate surface sol-gel process. As a result, well-defined SiO x film deposition (gelation) occurs, and patterned hydroxylation regions could be easily utilized to induce the formation of patterned oxide film arrays. Our strategy also excludes the requirements of clean room and vacuum devices so as to fulfill low-cost and fast fabrication demands. Two application examples from such high quality SiO x layer onto plastics are given but should not be limited within these. One is that oxygen permeation rate of SiO x deposited polymer film decreases 25 times than pristine polymer substrate, which is good for the potential packaging materials. The other one is that silanization monolayer, for example, 3-aminopropyltriethoxysilane (APTES), could be successfully constructed onto silica layer through classical silanization reaction, which is applicable for many potential purposes, for instance, proteins could be accordingly immobilized onto plastic support with effective signal-to-background ratio. Moreover, we further demonstrate that this interface-directed sol-gel strategy is a general method which could be successfully extended to other high quality oxide film fabrication, e.g., TiO 2 .

Sputter film deposition to fabricate thick oxide films with extremely smooth surface suitable for room-temperature bonding

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

Silicon Dioxide Deposition by Atmospheric Pressure and Low‐Temperature CVD Using TEOS and Ozone

Uniform broad-area deposition and patterning of SiO2 nanofilms by 172 nm photochemical conversion of liquid tetraethoxysilane layers at 300 K

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Low-Temperature Deposition of High-Quality SiO2 Films with a Sloped Sidewall Profile for Vertical Step Coverage

Interface-directed sol-gel: direct fabrication of the covalently attached ultraflat inorganic oxide pattern on functionalized plastics

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

Effect of SiO2 Layer Thickness on SiO2/Si3N4 Multilayered Thin Films

Ultrathin Sio2 Films Grown by Atomic Layer Deposition Using Tris(Dimethylamino)Silane (tdmas) and Ozone

Ultra-thin silver films grown by sputtering with a soft ion beam-treated intermediate layer

Silicon dioxide film deposited by photoassisted microwave plasma CVD using TEOS

High-Quality thin SiO2 films grown by atomic layer deposition using tris(dimethylamino)silane (TDMAS) and Ozone

Formation of Atomically Smooth Surfaces on Srtio3 Substrates for Epitaxial Film Growth

Enhanced Adhesion of Copper Films on Fused Silica Glass Substrate by Plasma Pre-Treatment