Influence of backsheet materials on potential-induced degradation in n-type crystalline-silicon photovoltaic cell modules

Seira Yamaguchi,Chizuko Yamamoto,Atsushi Masuda,Keisuke Ohdaira
DOI: https://doi.org/10.7567/1347-4065/ab4fd2
IF: 1.5
2019-11-06
Japanese Journal of Applied Physics
Abstract:We investigated the influence of backsheet materials on potential-induced degradation (PID) inn-type crystalline-silicon (c-Si) photovoltaic (PV) cell modules. Silicon heterojunction PV cellmodules and rear-emitter n-type c-Si PV cell modules were fabricated by using aluminum backsheetscomposed of poly ethylene terephthalate (PET)/aluminum/PET as well as typical backsheets. PID testsof the modules were performed by applying a negative bias in a dry environment (<2% relativehumidity). Regardless of the types of cells, the modules with the aluminum backsheets showed smallerdegradation. This indicates that aluminum backsheets reduce PID effects, and to alter backsheets maybe a potential measure to reduce PID.
physics, applied
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