UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures

Archana Sinha,Jiadong Qian,Stephanie L. Moffitt,Katherine Hurst,Kent Terwilliger,David C. Miller,Laura T. Schelhas,Peter Hacke
DOI: https://doi.org/10.1002/pip.3606
2022-07-11
Progress in Photovoltaics: Research and Applications
Abstract:The use of UV‐pass encapsulants in PV modules is becoming a popular option to capture ~1% light gain; however, this makes the cells more susceptible to ultraviolet‐induced degradation. In this study, modern crystalline‐silicon PV technologies including HJ, IBC, PERT, and PERC cells have shown greater power degradation when exposed to UV as compared with traditional Al‐BSF cells, which is attributed to greater sensitivity to increasing surface recombination velocity (limited front surface field) from UV damage. Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m−2 (at 340 nm) and 45°C through 4.02 MJ·m−2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (
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