Effect of access resistance on the experimentally measured temperature–carrier mobility dependence in highly-crystalline DNTT-based transistors

Qijing Wang,Sai Jiang,Yi Shi,Yun Li

DOI: https://doi.org/10.1039/d0ma00530d

2020-01-01

Materials Advances

Abstract:The carrier mobility–temperature dependence obtained from DNTT OFETs can be tuned by the access resistance and the molecular packing in bulk regime.

What problem does this paper attempt to address?

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Huang, J.Z.,Wen-Yan Yin

DOI: https://doi.org/10.1109/TED.2010.2082547

IF: 3.1

2011-01-01

IEEE Transactions on Electron Devices

Abstract:The performance prediction of double-walled carbon nanotube (DWCNT) array-built field-effect transistors (DWCNTFETs) is performed theoretically. The charge densities and surface potentials of double walls are solved in a self-consistent manner with the effects of wall screening among the DWCNT array treated appropriately. Some comparisons are made between our method and the nonequilibrium Green's function approach, with good agreement obtained. The influences of phonon scattering, doping resistances, Schottky barrier resistances, screening effects, and parasitic capacitances on DWCNTFET performance are examined in detail for different array geometries. It is found that, although its intrinsic channel part has no speed advantage over the single-walled counterpart, the overall speed performance can be better with low array densities and large diameters of the DWCNTs. The delay and cutoff frequency of the DWCNTFET can be decreased by 15% and increased by 30%, respectively. In particular, its better on current property can be utilized in the design of nanodevices with high-power-handling capability. © 2010 IEEE.
Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Liuhong Ma,Weihua Han,Hao Wang,Xiaoming Li,Fuhua Yang

DOI: https://doi.org/10.1063/1.4822318

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:The electronic behaviors in the n-type multiple-channel junctionless nanowire transistors are investigated in the thermal range from 10 K to 300 K. At low temperatures (T < 100 K), oscillation current spikes are clearly observed below flatband voltage and attributed to resonant tunneling through donor-induced quantum dot array. There is a minimum value at the critical temperature of 15 K for the drain currents and the electron mobility. The electron mobility increases rapidly above 15 K because of the thermal activation of ionized electrons. The temperature-dependent background trapping at the interface of silicon and silicon dioxide is evaluated by an Arrhenius-type off-state current with the activation energy of approximately 49 meV. As temperatures increasing, the negative shift of the threshold voltage with the slope of 4.0 mV K−1 is given predominantly by the thermal activation of traps.
Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Huali Duan,Erping Li,Wenxuan Zang,Qinyi Huang,Yimin Wang,Wenchao Chen

DOI: https://doi.org/10.1109/ted.2023.3280865

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:Self-heating of the device will intensify the thermo-mechanical effects, leading to an increase in thermal stress. Currently, most of the research focuses on strain engineering of the device by intentionally introducing mechanical stress. However, how thermal stress affects the performance of nanoscale transistors remains unclear. Thus, in this manuscript, a comprehensive coupled Multiphysics simulation is performed to investigate the self-heating induced thermal stress effects on quantum transport in the p-type ultrathin body (UTB)-FinFET. The quantum transport equation with consideration of thermal stress effects by the strain term in ${k}\cdot {p}$ Hamiltonian, heat conduction equation, and equilibrium equations of solid mechanics are solved self-consistently. Then, the impacts of self-heating-induced thermal stress on hole effective mass, hole average velocity, and current density of the FinFETs with different crystal orientation configurations and channel lengths are compared and analyzed. The simulation results show that thermal stress can decrease or increase the ON-state current depending on the crystal orientation configuration. Further analysis of the band structure obtained from the Hamiltonian shows that thermal stress can change the material properties such as the hole effective mass of the top subband, thus leading to the variations of device characteristics.
Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Yizhang Liu,Erping Li,Huali Duan,Liang Tian,Da Li,Wenchao Chen

DOI: https://doi.org/10.1109/ted.2024.3430255

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:The effects of self-heating-induced thermal stress on the quantum transport in p-type gate-all-around (GAA) nanosheet field effect transistors (NSFETs) are theoretically investigated in this article. The 3-D multiphysics simulation is performed to study the effects of self-heating-induced thermal stress on quantum transport in p-type NSFET by self-consistently solving quantum transport equations, heat conduction equation, and solid mechanics equilibrium equation, wherein the quantum transport equations and heat conduction equation are coupled by heat generation rate calculated from the current spectrum of nonequilibrium Green’s function (NEGF) with consideration of phonon scattering. The simulation results show that thermal stress induces a variation of band structure and changes the density of states (DOS) and hole effective mass. The variation of DOS leads to the variation of hole density and valence subband profiles. The drain current can be increased or decreased due to the variation of DOS depending on the crystal orientation configuration of device channel material.
Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

Francesca Urban,Grzegorz Lupina,Alessandro Grillo,Nadia Martucciello,Antonio Di Bartolomeo

DOI: https://doi.org/10.48550/arXiv.1912.04623

2019-12-10

Applied Physics

Abstract:The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of the gate-voltage dependence of the carrier mobility. We find that the gate voltage modulates the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that the raising temperature lowers the carrier mobility, has negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance an be achieved by the zig-zag shaping of the Ni contact.
Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

Nan Ma,Debdeep Jena

DOI: https://doi.org/10.48550/arXiv.1503.03015

2015-03-10

Materials Science

Abstract:In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.
Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors

Yu Shan,Jiawei Wang,Zean Guo,Dongyang Liu,Ying Zhao,Nianduan Lu,Ling Li

DOI: https://doi.org/10.1002/adma.202205517

IF: 29.4

2022-10-29

Advanced Materials

Abstract:Molecular doping has conventionally been an effective way to improve the electrical transport performances in organic field effect transistors (OFETs), while corresponding mechanisms associated with specific doping techniques have been less investigated and discussed in detail. Here, based on ultra‐thin DNTT single crystals we realized robust transconductance enhancements in OFETs upon surface molecular doping realized via van der Waals epitaxially growing crystalline F6TCNNQ onto the single crystal's surface. We proposed that, it is the mobility modulation effect (MME) from the interactions between charge transfer interface and gate electric field, that contributes to more weighted bulk carriers, and finally improve charge transport performances. The evaluations were further supported by SKPM's surface potential characterizations, which manifested the gate induced more delocalized holes near the charge transfer interfaces. SCLC investigations, numerical calculations, and theoretical mobility modeling were also performed to corroborate the analysis. This study could deepen the understanding of charge transport in doped semiconductors and provide effective ways for optimizing the electrical performance of organic devices. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

Yinan Huang,Xue Gong,Yancheng Meng,Zhongwu Wang,Xiaosong Chen,Jie Li,Deyang Ji,Zhongming Wei,Liqiang Li,Wenping Hu

DOI: https://doi.org/10.1038/s41467-020-20209-w

2021-01-04

Abstract:The temperature dependence of charge transport dramatically affects and even determines the properties and applications of organic semiconductors, but is challenging to effectively modulate. Here, we develop a strategy to circumvent this challenge through precisely tuning the effective height of the potential barrier of the grain boundary (i.e., potential barrier engineering). This strategy shows that the charge transport exhibits strong temperature dependence when effective potential barrier height reaches maximum at a grain size near to twice the Debye length, and that larger or smaller grain sizes both reduce effective potential barrier height, rendering devices relatively thermostable. Significantly, through this strategy a traditional thermo-stable organic semiconductor (dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, DNTT) achieves a high thermo-sensitivity (relative current change) of 155, which is far larger than what is expected from a standard thermally-activated carrier transport. As demonstrations, we show that thermo-sensitive OFETs perform as highly sensitive temperature sensors.
Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors

Yu Shan,Zean Guo,Yuan Kai,Ke Hu,Jiawei Wang

DOI: https://doi.org/10.1016/j.rinp.2023.106924

IF: 4.565

2023-09-06

Results in Physics

Abstract:Mobility of charge carriers in organic thin-film transistors (OTFTs) is one of the most important parameters, which is affected by the disorders in the semiconducting films. In general, realization of higher carrier concentration facilitates improved charge transport against these disorders. Here, we demonstrate in amorphous indacenodithiophen-co-benzothiadia (IDT-BT) based dual-gate organic thin-film transistors (DG-OTFTs) that the mobility can be robustly increased from 0.8 to 1.37 cm 2 V −1 s −1 , when voltage biases of opposite signs (negative one accumulate holes, positive one deplete holes) are applied on the dual independent gate electrodes. In details, the positive bias can confine the spatial distribution of the accumulated carriers near the negatively biased gate, leading to a higher effective carrier concentration with higher mobility. In addition, the interface confinement effect of carriers was further verified by two-dimensional numerical simulation, and calculations based on the variable range hopping method were performed to accurately reproduce the experimentally observed charge transport behavior in DG-OTFTs

physics, multidisciplinary,materials science
Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

Ryun-Han Koo,Wonjun Shin,Kyung Kyu Min,Dongseok Kwon,Dae Hwan Kim,Jae-Joon Kim,Daewoong Kwon,Jong-Ho Lee

DOI: https://doi.org/10.1109/led.2022.3223340

IF: 4.8157

2022-12-31

IEEE Electron Device Letters

Abstract:We demonstrate the factors that determine the tunneling electroresistance (TER) of the ferroelectric tunnel junction (FTJ) by investigating the effects of temperature ( ) and the number of cycles ( on remnant polarization ( and carrier transport process. The fabricated FTJs have a metal/ferroelectric/insulator/semiconductor structure. The is increased with increasing and due to oxygen vacancy redistribution. However, the increased in a higher and does not improve the TER ratio. Using current-voltage characterization and low-frequency noise spectroscopy, we reveal that the carrier transport process at the interface between the ferroelectric and dielectric layers becomes more important than in determining the TER ratio.

engineering, electrical & electronic
Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Xiaoming Huang,Chenfei Wu,Hai Lu,Fangfang Ren,Dunjun Chen,Rong Jiang,Rong Zhang,Youdou Zheng,Qingyu Xu

DOI: https://doi.org/10.1016/j.sse.2013.04.025

IF: 1.916

2013-01-01

Solid-State Electronics

Abstract:The electrical properties of amorphous indium-gallium-zinc oxide thin film transistors are measured in the temperature range from 70 to 300 K. The device shows normal enhancement mode operation with significantly reduced drain current at low temperature. Its turn-on voltage and subthreshold swing decrease as temperature increases. The transport mechanisms of channel electrons are analyzed based on the evolution of field-effect mobility and channel conductance as a function of temperature and gate bias. It is suggested that in low temperature range, the dominant carrier transport mechanism is hopping between localized band-tail states. As temperature increases, multiple trapping and release plays a role in the whole carrier transport process. Meanwhile, in high gate bias range when the Fermi level moves above the mobility edge, band transport starts to dominate. (C) 2013 Elsevier Ltd. All rights reserved.
Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

Ali Naderi,S. Mohammad Noorbakhsh,Hossein Elahipanah

DOI: https://doi.org/10.48550/arXiv.1702.01148

2017-02-04

Abstract:By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by employing the self-consistent solution of 2D Poisson-Schrodinger equations within the nonequilibrium Green's function (NEGF) formalism. Principal characteristics of CNTFETs such as current capability, drain conductance, transconductance, and subthreshold swing (SS) have been investigated. Simulation results present that the drain conductance and on-current of the CNTFET increases as temperature raises from 250 to 500 K. Meanwhile the on-/off-current ratio deteriorated due to faster growth in off-current. Also the effects of temperature on short channel effects (SCEs) such as drain-induced barrier lowering (DIBL) and threshold voltage roll-off have been studied. Results show that the subthreshold swing and DIBL parameters are almost linearly correlated, so the degradation of these parameters has the same origin and can be perfectly influenced by the temperature.

Materials Science
A Ballistic Transport Study for Advanced Transistors in Post-Moore Era: Parasitic Resistance, Self-heating and Cryogenic Analysis

Ying Sun,Yuchen Gu,Bing Chen,Xiao Yu,Ran Cheng

DOI: https://doi.org/10.1109/icicdt51558.2021.9626397

2021-01-01

Abstract:In this work, we investigate the carrier ballistic transport characteristics from the perspective of self-heating effect (SHE), parasitic resistance, aging-induced traps and the cryogenic applications, for transistors with advanced structures and novel channel materials. As the SHE in the devices could be effectively eliminated by fast measurement, circuit-speed device transport characteristics could be accurately extracted. The large parasitic resistance in nanoscale transistors also affects the device transport behavior. Furthermore, for the future quantum-CMOS integration, the ballistic parameter extraction for the FinFETs was also performed to provide the relevant design parameter at the cryogenic environment.
Intrinsic Charge Carrier Mobility in Single-Crystal OFET by “fast Trapping Vs. Slow Detrapping” Model

Mo Chen,Yanan Zhu,Chao Yao,Dongwei Zhang,Xingwei Zeng,Imran Murtaza,Haibiao Chen,Seiya Kasai,Hong Meng,Osamu Goto

DOI: https://doi.org/10.1016/j.orgel.2017.12.042

IF: 3.868

2017-01-01

Organic Electronics

Abstract:This study investigates the gate stress-induced mobility discrepancy in p-type single-crystal organic field-effect transistors (OFETs) on an octyltrichlorosilane (OTS)-modified SiO2/Si substrate. During measurements in atmosphere, anti-clockwise hysteresis was observed in the transfer curve, and the mobility calculated from the forward sweep was smaller than that calculated from the reverse sweep. Hysteresis has often been observed for OFETs but the mobility discrepancy has not been clearly understood. We formulated a "fast trapping vs. slow detrapping" model and suggested that the mobility values calculated from the reverse sweep represent the intrinsic property of the material. To verify the validity of this model, we investigated mobility anisotropy of an air-stable organic semiconductor, 2,7-bis(4-methoxyphenyl) benzo[b] benzo[4,5] thieno[2,3-d] thiophene (DBOP-BTBT). By measuring the single-crystal OFET characteristics of many crystals with different orientations, we observed anisotropic hole mobility calculated from the reverse sweep. The mobility along the b-axis, which corresponds to the p-p stacking direction, was 13.9 cm(2) V-1 s(-1), and that along the a-axis was 6.2 cm(2) V-1 s(-1). However, we did not see clear anisotropy when mobility was calculated from the forward sweep due to a variation in the data. The threshold voltage from the reverse and the forward sweeps showed isotropic characteristics within the range from -60 to -70 V and from -50 to -60 V, respectively. These results indicate that the numbers of filled traps were different between the reverse and the forward sweeps at the interface, and confirm the validity of our model.
Temperature dependence of the hole mobility in indacenodithiophene-benzothiadiazole OTFTs

Beibei Wang,Renrong Liang,Libin Liu,Jing Wang,Jun Xu

DOI: https://doi.org/10.1109/IPFA.2017.8060115

2017-01-01

Abstract:Organic thin film transistors with indacenodithiophene - benzothiadiazole (C 16 IDT-BT) as the semiconducting layer was fabricated to investigate the effect of temperature on the charge carrier mobility. To offer guidelines for optimal working conditions, the temperature range was chosen from 300 K to 460 K. Results showed that the hole mobility improved as the temperature increased until a certain point (TC), then the mobility decreased as the temperature continued to increase. The highest mobility was found to be 0.8 cm 2 /V· s at 360 K. The mobility also increased as the gate voltage increased. It was also shown that when the transistors were cooled down to the room temperature after heating, T C was almost unchanged but the mobility decreased.
Effects Of Pressure And Temperature On The Carrier Transports In Organic Crystal: A First-Principles Study

Linjun Wang,Qun Li,Zhigang Shuai

DOI: https://doi.org/10.1063/1.2918276

2008-01-01

Abstract:By employing density-functional theory coupled with Holstein-Peierls model, we investigate the pressure and temperature dependence of the hole and electron mobilities in naphthalene single crystal from atmospheric pressure up to 2.1 GPa (at room temperature) and from 5 to 296 K (at ambient pressure). It is found that the pressure reduces the electron-phonon coupling strength and enhances the mobilities. Importantly, we point out that only when temperature-dependent structure modifications are taken into account can one better describe the temperature-dependent transport behavior. Especially, the band to hopping crossover transition temperature for the electron transport in the c'-axis is calculated to be around 153 K, which is close to the experimental result of between 100 and 150 K. If this temperature-dependent structure modifications were neglected, the transition temperature would be only about 23 K, as previously obtained [L. J. Wang , J. Chem. Phys. 127, 044506 (2007)]. (c) 2008 American Institute of Physics.
Carrier Transport at the Metal-MoS2 Interface

Faisal Ahmed,Min Sup Choi,Xiaochi Liu,Won Jong Yoo

DOI: https://doi.org/10.1039/c5nr01044f

2015-04-14

Abstract:This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the contact resistance (Rc) as a function of temperature indicate a transition in the carrier transport across the energy barrier from a thermionic emission at a high temperature to tunneling at a low temperature. Furthermore, at a low temperature, the nature of the tunneling behavior is ascertained by the current-voltage dependency that helps us feature direct tunneling at a low bias and Fowler-Nordheim tunneling at a high bias for a Pd-MoS2 contact due to the effective barrier shape modulation by biasing. In contrast, only direct tunneling is observed for a Cr-MoS2 contact over the entire applied bias range. In addition, simple analytical calculations were carried out to extract Rc at the gating range, and the results are consistent with the experimental data. Our results describe the transition in carrier transport mechanisms across a metal-MoS2 interface, and this information provides guidance for the design of future flexible, transparent electronic devices based on 2-dimensional materials.

Materials Science,Mesoscale and Nanoscale Physics
Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

Chen Hao Xia,Leonard Deuschle,Jiang Cao,Alexander Maeder,Mathieu Luisier

DOI: https://doi.org/10.1109/LED.2024.3417307

2024-10-31

Abstract:Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism and self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior.

Mesoscale and Nanoscale Physics
Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors

Liu, F.,jian wang,hong guo

DOI: https://doi.org/10.1109/TED.2015.2497082

IF: 3.1

2016-01-01

IEEE Transactions on Electron Devices

Abstract:Ballistic transport characteristics of transition metal dichalcogenide (TMDC) tunneling FETs (TFETs) are investigated by atomistic simulations using nonequilibrium Green’s function. It is revealed that TMDC TFETs have crystal orientation-dependent transport properties: larger current but smaller utmost limit of $I_{mathrm{scriptscriptstyle ON}}/I_{mathrm{scriptscriptstyle OFF}}$ ratio in the zigzag direction (ZD) than in the armchair direction (AD). The orientation-dependent transport is related to the atomistic arrangement in the transport direction and subband properties. A giant negative differential resistance can be obtained in the AD due to the transport valley in the conduction band (CB), while it does not exist in the ZD. Device performance is optimized by tuning doping density and dielectric oxide thickness. Higher source/drain doping concentration can enhance the current at all studied gate voltages but reduce the $I_{mathrm{scriptscriptstyle ON}}/I_{mathrm{scriptscriptstyle OFF}}$ ratio, while thinner dielectric oxide thickness can increase saturation current and decrease minimum current at the same time. We also studied the scaling behavior of TMDC TFETs and found that the OFF-state current difference between the two directions gets larger with the gate length. At last, $I_{mathrm{scriptscriptstyle ON}}$ as a function of $I_{mathrm{scriptscriptstyle ON}}/I_{mathrm{scriptscriptstyle OFF}}$ ratio of six kinds of monolayer $MX _{2}$ ( $M=$ Mo and W; $X=$ S, Se, and Te) TFETs are compared. The largest ON-state current is obtained in WTe2 TFETs at the same $I_{mathrm{scriptscriptstyle ON}}/I_{mathrm{scriptscriptstyle OFF}}$ ratio.
Low-temperature Electrical Characterization of P- and N-Type MoTe2 Transistors

Wenjie Chen,Renrong Liang,Jun Xu

DOI: https://doi.org/10.1109/edssc.2019.8753960

2019-01-01

Abstract:We have fabricated high performance p- and n-type molybdenum ditelluride (MoTe2) transistors and demonstrated their temperature dependent characteristics. The carrier mobility increases and the absolute value of threshold voltage decreases with the rise of temperature for both p- and n-type MoTe2 transistors. Furthermore, the slopes of threshold voltage shift with temperature are estimated to be 171 mV/K and 71 mV/K for p- and n-type MoTe2 transistors, respectively. The large difference results from their different carrier transport mechanisms. These results open opportunities to facilitate the development of high-performance functional devices based on two-dimensional layered semiconductors in the future.

Effect of access resistance on the experimentally measured temperature–carrier mobility dependence in highly-crystalline DNTT-based transistors

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors

Surface Doping Induced Mobility Modulation Effect for Transport Enhancement in Organic Single Crystal Transistors

Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

Carrier confinement for mobility enhancement in dual-gate organic thin-film transistors

Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

A Ballistic Transport Study for Advanced Transistors in Post-Moore Era: Parasitic Resistance, Self-heating and Cryogenic Analysis

Intrinsic Charge Carrier Mobility in Single-Crystal OFET by “fast Trapping Vs. Slow Detrapping” Model

Temperature dependence of the hole mobility in indacenodithiophene-benzothiadiazole OTFTs

Effects Of Pressure And Temperature On The Carrier Transports In Organic Crystal: A First-Principles Study

Carrier Transport at the Metal-MoS2 Interface

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors

Low-temperature Electrical Characterization of P- and N-Type MoTe2 Transistors