Abstract:Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

The characterization and application of chip topside bonding materials for power modules packaging: a review

Al-clad Cu Bond Wires for Power Electronics Packaging: Microstructure Evolution, Mechanical Performance, and Molecular Dynamics Simulation of Diffusion Behaviors

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Potential of Epoxy Nanocomposites for Packaging Materials of High Voltage Power Modules: A Validation Using Experiments and Simulation

A Simulation-Based Design Approach for Optimized Performance of Cu-Mo-Cu Clips in High-Power Semiconductor Modules

Review of Hybrid Packaging Methods for Power Modules

Impact of bonding methods and surface finishes on terminal-substrate reliability in EV power modules

DBC Substrate in Si- and SiC-based Power Electronics Modules: Design, Fabrication and Failure Analysis

Improving Power Cycle Lifetime of SiC Power Modules with Double-Bonded Wire: Experimental and Simulation Analysis

Transient Liquid Phase Diffusion Bonding Technology for Power Semiconductor Packaging

A Review of Mechanism and Technology of Hybrid Bonding

Bonding Process of Copper Foam-Silver Composite and Performance Characterization of the Joint

Loop Height Effects on Bond Wire Reliability under Power Cycling for SiC Power Module

Mechanical Issues of Cu-to-Cu Wire Bonding

Finite element modeling and analysis of ultrasonic bonding process of thick aluminum wires for power electronic packaging

Research Progress on Bonding Wire for Microelectronic Packaging

Copper Wire Bonding: A Review

Thermal and Reliability Characterization of an Epoxy Resin-Based Double-Side Cooled Power Module

Mechanism Analysis of Process Parameters Effects on Bondability in Ultrasonic Ball Bonding

Cu–Sn and Ni–Sn transient liquid phase bonding for die-attach technology applications in high-temperature power electronics packaging

Finite Element Analysis of Wire Bonding Non-Stick Issue in Miniaturized Package Development